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1T413

型号:

1T413

描述:

变容二极管[ Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

50 K

1T413  
Variable Capacitance Diode  
Description  
M-290  
The 1T413 is a variable capacitance diode  
designed for the digital cellular phone VCO using a  
super-small-miniature flat package (SSVC).  
Features  
Super-small-miniature flat package  
Low series resistance: 0.40 Max. (f=470 MHz)  
Large capacitance ratio: 2.90 Typ.  
(C1/C4)  
Small leakage current: 10 nA Max. (VR=15 V)  
Absolute Maximum Ratings (Ta=25 °C)  
Reverse voltage  
Operating temperature Topr  
Storage temperature  
VR  
15  
V
Applications  
–20 to +75  
°C  
Digital cellular phone VCO  
Tstg –65 to +150 °C  
Structure  
Silicon epitaxial planar type diode  
Electrical Characteristics  
(Ta=25 °C)  
Item  
Symbol  
IR  
Conditions  
Min.  
Typ.  
2.9  
Max.  
10.0  
17.5  
6.1  
Unit  
nA  
pF  
Reverse current  
VR=15 V  
C1  
VR=1 V, f=1 MHz  
VR=4 V, f=1 MHz  
15.0  
5.1  
Diode capacitance  
C4  
pF  
Capacitance ratio  
Series resistance  
C1/C4  
rs  
2.5  
VR=1 V, f=470 MHz  
0.40  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E99220-TE  
1T413  
Example of Representative Characteristics  
Diode capacitance vs. Reverse voltage  
100  
Reverse current vs. Ambient temperature  
VR=15V  
Ta=25°C  
50  
20  
10  
10  
5
2
1
1
0.1 0.2  
0.5  
1
2
5
10  
VR-Reverse voltage (V)  
0.1  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Forward voltage vs. Ambient temperature  
Reverse voltage vs. Ambient temperature  
0.90  
0.80  
0.70  
0.60  
35  
30  
25  
20  
IF=1mA  
IR=10µA  
–20  
0
20  
40  
60  
80  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Ta-Ambient temperature (°C)  
—2—  
1T413  
Temperature coefficient of diode capacitance  
Diode capacitance vs. Ambient temperature  
VR=1V VR=2V  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
VR=3V  
2000  
1000  
500  
VR=4V  
VR=10V  
200  
100  
50  
30  
0.1 0.2  
0.5 1.0  
2.0  
5.0 10.0 20.0  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
VR-Reverse voltage (V)  
Reverse current vs. Reverse voltage  
Series resistance vs. Reverse voltage  
100  
10  
1
0.5  
0.4  
f=470MHz  
Ta=80°C  
0.3  
0.2  
0.1  
0.0  
Ta=60°C  
0.1  
1
10  
VR-Reverse voltage (V)  
Ta=25°C  
0.1  
1
3
10  
30  
VR-Reverse voltage (V)  
—3—  
1T413  
Package Outline Unit : mm  
M-290  
0.8 ± 0.1  
c
b
10° MAX  
BASE METAL WITH PLATING  
+ 0.05  
c
0.11 ± 0.005  
0.3 ± 0.025  
0.11  
0.3  
0.01  
+ 0.05  
0.02  
b
EPOXY RESIN  
PACKAGE MATERIAL  
LEAD TREATMENT  
LEAD MATERIAL  
SOLDER PLATING  
SONY CODE  
EIAJ CODE  
M-290  
COPPER  
0.002g  
JEDEC CODE  
PACKAGE WEIGHT  
Mark  
2
1
X3  
1 FCathode  
2 FAnode  
—4—  
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