IXTP 01N100D
TO-220 AD Dimensions
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 50 V; ID = ID25
Note 1
100
150
mS
Ciss
Coss
Crss
120
15
3
pF
pF
pF
VGS = -10 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
8
6
ns
ns
ns
ns
Vgs = 0 V, to -10 V, ID = 50 mA
Vds = 100 V
30
51
RG = 30Ω, (External)
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
RthJC
5
K/W
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VSD
TestConditions
VGS = -10 V, IF = ID25
Note 1
1.0
1.5
V
trr
IF = 0.75 A, -di/dt = 10 A/µs,
VDS = 25 V, VGS = -10V
1.5 µs
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
