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IXTP1N100

型号：

IXTP1N100

描述：

高电压的MOSFET[ High Voltage MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

2 页

PDF大小：

49 K

下载PDF手册
Advanced Technical Information  
High Voltage  
MOSFET  
IXTA 1N100  
IXTP 1N100  
VDSS = 1000 V  
ID25 = 1.5 A  
RDS(on) = 11 Ω  
N-Channel Enhancement Mode  
Avalanche Energy Rated  
Symbol  
TestConditions  
MaximumRatings  
TO-220AB (IXTP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
AB)  
G
VGSM  
D
S
ID25  
IDM  
TC = 25°C  
1.5  
6
A
A
TC = 25°C, pulse width limited by TJM  
TO-263 AA (IXTA)  
IAR  
1.5  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
6
mJ  
mJ  
200  
G
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 18 Ω  
,
3
V/ns  
D (TAB)  
PD  
TC = 25°C  
54  
W
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Features  
Weight  
4
g
Ÿ Internationalstandardpackages  
Ÿ High voltage, Low RDS (on) HDMOSTM  
process  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Ÿ Rugged polysilicon gate cell structure  
Ÿ Fast switching times  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Ÿ Switch-modeandresonant-mode  
powersupplies  
Ÿ Flyback inverters  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 25 µA  
1000  
2.5  
V
V
VGS(th)  
4.5  
Ÿ DC choppers  
Ÿ Highfrequencymatching  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
500 µA  
Ÿ Space savings  
Ÿ High power density  
RDS(on)  
VGS = 10 V, ID = 1.0A  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
11  
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98545A(11/99)  
1 - 2  
IXTA 1N100  
IXTP 1N100  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-263 AA (IXTA) Outline  
VDS = 20 V; ID = 1.0A, pulse test  
0.8  
1.5  
S
Ciss  
Coss  
Crss  
480  
45  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
15  
td(on)  
tr  
td(off)  
tf  
18  
19  
20  
18  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A  
RG = 18Ω, (External)  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Qg(on)  
Qgs  
23  
4.5  
14  
nC  
nC  
nC  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160 .190  
.080 .110  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020 .039  
.045 .055  
Qgd  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018 .029  
.045 .055  
RthJC  
RthCK  
2.3 K/W  
K/W  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340 .380  
.280 .320  
(IXTP)  
0.50  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380 .405  
.270 .320  
.100 BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575 .625  
.090 .110  
.040 .055  
.050 .070  
L1  
L2  
L3  
L4  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
0
.015  
Symbol  
TestConditions  
R
0.46  
0.74  
.018 .029  
IS  
VGS = 0 V  
1.5  
6
A
A
V
TO-220 AB (IXTP) Outline  
ISM  
VSD  
Repetitive; pulse width limited by TJM  
IF = IS, VGS = 0 V,  
1.8  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
710  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
B
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
C
D
9.91 10.66 0.390 0.420  
3.54  
4.08 0.139 0.161  
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
J
K
0.64  
2.54  
1.01 0.025 0.040  
BSC 0.100  
BSC  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
Q
R
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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