VDSS
ID25
RDS(on)
Standard
Power MOSFET
IXTH/IXTM 6 N80 800 V 6 A 1.8 Ω
IXTH/IXTM 6 N80A 800 V 6 A 1.4 Ω
N-Channel Enhancement Mode
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
VGSM
ID25
IDM
TC = 25°C
6
A
A
TO-204 AA (IXTM)
TC = 25°C, pulse width limited by TJM
24
PD
TC = 25°C
180
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G
-55 ... +150
Md
Mounting torque
1.13/10 Nm/lb.in.
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
●
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
●
●
●
●
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
●
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
VDSS
VGS = 0 V, ID = 3 mA
800
2
V
V
●
VGS(th)
VDS = VGS, ID = 250 µA
4.5
●
●
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 µA
VDS = 0.8 • VDSS
TJ = 25°C
Advantages
VGS = 0 V
TJ = 125°C
1
mA
●
Easy to mount with 1 screw (TO-247)
RDS(on)
VGS = 10 V, ID = 0.5 ID25 6N80
6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.8
1.4
Ω
Ω
(isolated mounting screw hole)
Space savings
High power density
●
●
91542E(5/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
IXYSSemiconductor
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
