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IXTK140N20P

型号：

IXTK140N20P

描述：

PolarHT功率MOSFET[ PolarHT Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

565 K

下载PDF手册
Advanced Technical Information  
PolarHTTM  
Power MOSFET  
VDSS = 200 V  
ID25 = 140 A  
RDS(on) = 18 mΩ  
IXTK 140N20P  
N-Channel Enhancement Mode  
TO-264(SP) (IXTK)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 175°C  
200  
200  
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ  
VGSM  
20  
V
ID25  
TC = 25°C  
140  
75  
A
A
A
(TAB)  
G
D
S
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
280  
IAR  
TC = 25°C  
60  
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
100  
4
mJ  
J
Features  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
z
z
TC = 25°C  
800  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
Low package inductance  
- easy to drive and to protect  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Advantages  
Md  
1.13/10 Nm/lb.in.  
10  
z
Easy to mount  
Space savings  
Weight  
g
z
z
High power density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 500µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
2.5  
5.0  
200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
VGS = 15 V, ID = 140A  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
18 mΩ  
mΩ  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
14  
DS99194(07/04)  
© 2004 IXYS All rights reserved  
IXTK 140N20P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-264(SP) Outline (IXTK)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
50  
84  
S
Ciss  
Coss  
Crss  
7500  
1800  
280  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
35  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 3.3 Ω (External)  
150  
90  
Qg(on)  
Qgs  
240  
50  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
100  
RthJC  
RthCK  
0.18 K/W  
K/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
140  
A
A
V
ISM  
Repetitive  
280  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
120  
3.5  
ns  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,259,123B1  
6,306,728 B1  
IXTK 140N20P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
VGS = 10V  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
60  
7V  
6V  
40  
60  
20  
30  
5V  
1.5  
0
0
0
0
0
0.5  
1
2
2.5  
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
140  
120  
100  
80  
VGS = 10V  
3
2.5  
2
VGS = 10V  
9V  
8V  
ID = 140A  
7V  
ID = 70A  
60  
1.5  
1
6V  
5V  
40  
20  
0
0.5  
1
2
3
4
5
6
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
4
3.5  
3
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = 175 C  
External Lead Current Limit  
2.5  
2
VGS = 10V  
V
GS  
= 15V  
1.5  
1
º
TJ = 25 C  
0.5  
-50 -25  
0
25  
50  
75 100 125 150 175  
50  
100  
150  
200  
250  
300  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTK 140N20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
225  
200  
175  
150  
125  
100  
75  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = -40 C  
25ºC  
150ºC  
º
TJ = 150 C  
25ºC  
50  
-40ºC  
25  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
40  
80  
120  
160  
200  
240  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
D = 70A  
G = 10mA  
I
I
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
25 50 75 100 125 150 175 200 225 250  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
f = 1MHz  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
º
TJ = 175 C  
RDS(on) Limit  
= 25ºC  
TC  
C
iss  
25µs  
100µs  
C
oss  
1ms  
C
rss  
10ms  
DC  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTK 140N20P  
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
0 . 0 0  
0 . 1  
1
1 0  
1 0 0  
1 0 0 0  
Pu ls e W id th - millis e c o n d s  
© 2004 IXYS All rights reserved  
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