请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTK33N50

型号：

IXTK33N50

描述：

高电流MegaMOSFET[ High Current MegaMOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

88 K

下载PDF手册
IXTK 33N50 VDSS = 500 V  
ID(cont) = 33 A  
High Current  
MegaMOSTMFET  
RDS(on) = 0.17 Ω  
N-ChannelEnhancementMode  
Preliminarydata  
Symbol Test conditions  
Maximumratings  
TO-264AA  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ  
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
D(TAB)  
G
D
S
ID25  
IDM  
TC = 25°C  
33  
A
A
TC = 25°C, pulse width limited by TJM  
132  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
416  
W
T
-55 ... +150  
150  
°C  
°C  
°C  
J
TJM  
T
-55 ... +150  
stg  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Weight  
10  
g
Maxleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecell  
structure  
• Internationalstandardpackage  
• Fast switching times  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ. Max.  
Applications  
VDSS  
VGS = 0 V, ID = 5 mA  
500  
2.0  
V
• Motorcontrols  
• DC choppers  
• UninterruptablePowerSupplies  
(UPS)  
• Switch-modeandresonant-mode  
BVDSS temperaturecoefficient  
0.087  
%/K  
VGS(th)  
VDS = VGS, ID = 250 µA  
4.0  
V
VGS(th) temperature coefficient  
-0.25  
%/K  
IGSS  
IDSS  
VGS = ±20 V DC, VDS = 0  
±100 nA  
Advantages  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
200 µA  
• Easy to mount with one screw  
(isolated mounting screw hole)  
• Space savings  
TJ = 125°C  
3
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
0.17  
Ω
• High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
95513C (4/97)  
1 - 4  
IXTK 33N50  
Symbol  
Test Conditions  
Characteristic values  
Min. Typ. Max.  
TO-264 AA Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
24  
S
Ciss  
Coss  
Crss  
4900  
690  
pF  
pF  
pF  
300  
td(on)  
tr  
td(off)  
tf  
53  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1 Ω (External)  
140  
40  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
Qg(on)  
Qgs  
250  
30  
nC  
nC  
nC  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
115  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCK  
0.30 K/W  
K/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.15  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
Source-Drain Diode  
Ratings and Characteristics  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS= 0 V  
33  
132  
1.5  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
850  
ns  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXTK 33N50  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125°C  
VGS = 10 V  
TJ = 25°C  
V
GS = 10 V  
9 V  
8 V  
7 V  
9 V  
8 V  
7V  
6V  
6V  
5V  
5V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDS - Volts  
VDS - Volts  
Figure 1. Output Characteristics at 25OC  
Figure 2. Output Characteristics at 125OC  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
VGS = 10 V  
V
GS = 10 V  
I
D = 33 A  
TJ = 125°C  
ID = 16.5 A  
TJ = 25°C  
0
10 20 30 40 50 60 70 80  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Figure 3. RDS(on) normalized to 16.5A/25OC vs. ID  
Figure 4. RDS(on) normalized to 16.5A/25OC vs. TJ  
40  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
TJ = 125oC  
10  
TJ = 25oC  
0
0
-50 -25  
0
25 50 75 100 125 150  
2
3
4
5
6
7
8
TC - Degrees C  
VGS - Volts  
Figure 5. Drain Current vs. Case Temperature  
Figure 6. Admittance Curves  
© 2000 IXYS All rights reserved  
3 - 4  
IXTK 33N50  
14  
12  
10  
8
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
F = 1MHz  
Vds=300V  
ID=33A  
Ciss  
IG=10mA  
6
Coss  
4
Crss  
2
0
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
Gate Charge - nC  
VDS - Volts  
Figure 7. Gate Charge  
Figure 8. Capacitance Curves  
100  
80  
60  
40  
20  
0
100  
1 ms  
10  
1
10 ms  
TJ = 125°C  
100 ms  
TC = 25°C  
DC  
TJ = 25°C  
0. 1  
0.4  
0.6  
0.8  
VSD - Volts  
1.0  
1.2  
500  
10  
100  
VDS - Volts  
Figure 9. Source Current vs. Source-to-  
Drain Voltage  
Figure 10. Forward Biased SOA  
1.00  
0.10  
Single Pulse  
0.01  
0.001  
0.01  
0.1  
Pulse Width - Seconds  
1
10  
Figure 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 4  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.223791s