IXTH 7P50
IXTH 8P50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = -10 V; ID = ID25, pulse test
4
5
S
1
2
3
Ciss
Coss
Crss
3400
450
pF
pF
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
175
td(on)
tr
td(off)
tf
33
27
35
35
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
RG = 4.7 Ω (External)
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
130
32
nC
nC
nC
A
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25
1
A
2
Qgd
64
b
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
1
b
RthJC
RthCS
0.7 K/W
K/W
2
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
L
L1
P
3.55
5.89
3.65 .140 .144
6.40 0.232 0.252
Q
R
S
4.32 5.49
6.15 BSC
.170 .216
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0
7P50
8P50
-7
-8
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM 7P50
8P50
-28
-32
A
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
-3
V
IF = IS, di/dt = 100 A/µs
400
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
