WTD772
WTD882
PNP/NPN Epitaxial Planar Transistors
TO-252/D-PAK
* “G” Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Symbol
PNP/WTD772
Unit
Vdc
Vdc
Vdc
Adc
NPN/WTD882
V
30
40
5.0
3.0
-30
-40
-5.0
-3.0
CEO
V
V
CBO
EBO
I
C(DC)
Collector Current (Pulse)(1)
(Pulse)
-7.0
-0.6
Adc
Adc
I
C
7.0
0.6
I
(Pulse)
Base Current
B
P
Total Device Dissipation Tc=25 C
Junction Temperature
W
C
D
10
150
T
j
Storage, Temperature
Tstg
C
-55 to +150
Device Marking
WTD772=B772 , WTD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)
V
-30/30
Vdc
C
B
(BR)CEO
-
-
-40/40
Vdc
Collector-Base Breakdown Voltage (I = -100/100 µAdc, I =0)
V
V
C
E
(BR)CBO
Vdc
-5.0/5.0
Emitter-Base Breakdown Voltage (I = -100/100 µAdc, I =0)
(BR)EBO
E
C
uAdc
I
I
CE0
-1.0/1.0
-1.0/1.0
Collector Cutoff Current (V = -30/30 Vdc, I =0)
-
-
CE
B
uAdc
Collector Cutoff Current (V = -40/40 Vdc, I =0)
CB
CBO
EBO
E
-
I
-1.0/1.0 uAdc
d
Emitter Cutoff Current (V = -6.0/6.0V c, I =0)
EB
C
NOTE: 1.PW 350us, duty cycle 2%
WEITRON
http://www.weitron.com.tw
