WTD6A60S
Bi-Directional Triode Thyristor
Features
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Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=6A)
High Commutation dv/dt
Isolation Voltage (VISO=1500V AC)
General Description
This device fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature modulation control,lighting control and static
switching relay. This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
condition
Ratings
600
Units
V
IT(RMS)
Tc=89℃
6.0
A
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
ITSM
Surge On-State Current
60/66
A
I2t
PGM
PG(AV)
IGM
I2t
18
3.0
A2s
W
W
A
Peak Gate Power Dissipation
Average Gate Power dissipation
Peak Gate Current
Peak Gate Voltage
0.3
2.0
VGM
VISO
TJ
10
V
Isolation Breakdown voltage(R.M.S.) A.C 1 minute
Operating Junction Temperature
Storage Temperature
1500
-40~125
-40~150
2.0
V
℃
℃
g
TSTG
Mass
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
3.8
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
