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VVZ175

型号:

VVZ175

描述:

三相半控整流桥, B6HK[ Three Phase Half Controlled Rectifier Bridge, B6HK ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

47 K

VVZ 110  
VVZ 175  
IdAVM = 110/167 A  
VRRM = 1200-1600 V  
Three Phase Half Controlled  
Rectifier Bridge, B6HK  
E
~
D
~
A
C
~
VRSM  
VDSM  
VRRM  
VDRM  
Type  
3
2
1
E
D
C
V
V
1300  
1500  
1700  
1200  
1400  
1600  
VVZ 110-12io7 VVZ 175-12io7  
VVZ 110-14io7 VVZ 175-14io7  
VVZ 175-16io7  
B
-
B
A
+
3
2
1
Symbol  
Test Conditions  
Maximum Ratings  
VVZ 110 VVZ 175  
IdAV  
IFRMS, ITRMS  
TC = 85°C; module  
per leg  
110  
58  
167  
89  
A
A
Features  
Package with screw terminals  
Isolation voltage 3000 V~  
Planar passivated chips  
UL registered E72873  
IFSM, ITSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
1150  
1230  
1500  
1600  
A
A
VR = 0  
t = 8.3 ms (60 Hz), sine  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1000  
1070  
1350  
1450  
A
A
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
6600  
6280  
11200  
10750  
A2s  
A2s  
Applications  
Input rectifier for PWM converter  
Input rectifier for switch mode power  
supplies (SMPS)  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
5000  
4750  
9100  
8830  
A2s  
A2s  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 50 A  
150  
A/ms  
Softstart capacitor charging  
f =400 Hz, tP =200 ms  
VD = 2/3 VDRM  
IG = 0.3 A,  
diG/dt = 0.3 A/ms, IT = 1/3 • IdAV  
non repetitive,  
500  
1000  
10  
A/ms  
V/ms  
V
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ¥; method 1 (linear voltage rise)  
VRGM  
PGM  
cycling  
TVJ = TVJM  
IT = ITAVM  
tp = 30 ms  
tp = 500 ms  
tp = 10 ms  
£
£
£
10  
5
1
W
W
W
W
PGAVM  
0.5  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque (M6)  
Terminal connection torque (M6)  
typ.  
5±15 %  
5±15 %  
300  
Nm  
Nm  
g
Weight  
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VVZ 110  
VVZ 175  
10  
V
Symbol  
IR, ID  
Test Conditions  
Characteristic Values  
VVZ 110 VVZ 175  
1: I  
GT, TVJ = 125°C  
2: IGT, TVJ 25°C  
=
3: IGT, TVJ = -40°C  
VR = VRRM; VD = VDRM  
IF, IT = 200 A, TVJ = 25°C  
TVJ = TVJM  
VJ = 25°C  
£
£
5
0.3  
mA  
mA  
VG  
T
VF, VT  
£
1.75  
1.57  
V
3
VT0  
rT  
For power-loss calculations only  
(TVJ = 125°C)  
0.85  
6
0.85  
3.5  
V
mW  
2
6
5
1
1
4
VGT  
IGT  
VD = 6 V;  
VD = 6 V;  
TVJ = 25°C  
VJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
£
£
£
£
1.5  
1.6  
100  
200  
V
V
mA  
mA  
T
4: P  
GAV = 0.5 W  
5: PGM 5 W  
=
VGD  
IGD  
TVJ = TVJM  
TVJ = TVJM  
;
;
VD = 2/3 VDRM  
VD = 2/3 VDRM  
£
£
0.2  
5
V
mA  
I
GD, TVJ = 125°C  
6: PGM = 10 W  
0.1  
1
10  
100  
1000  
IG  
mA  
IL  
IG = 0.3 A; tG = 30 ms  
diG/dt = 0.3 A/ms  
TVJ = 25°C  
£
450  
mA  
Fig. 1 Gate trigger characteristics  
IH  
TVJ = 25°C; VD = 6 V; RGK = ¥  
£
£
200  
2
mA  
tgd  
TVJ = 25°C; VD = 1/2 VDRM  
IG = 0.3 A; diG/dt = 0.3 A/ms  
ms  
120  
A
VVZ 110  
RthJC  
RthJH  
per thyristor (diode); DC current  
per module  
per thyristor (diode); DC current  
per module  
0.65  
0.108  
0.8  
0.46  
0.077  
0.55  
K/W  
K/W  
K/W  
K/W  
100  
IdAV  
80  
60  
40  
20  
0
0.133  
0.092  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
10  
9.4  
50  
mm  
mm  
m/s2  
0
50  
100  
150  
°C  
TC  
Fig. 2 DC output current at case  
temperature  
Dimensions in mm (1 mm = 0.0394")  
900  
A
0.7  
VVZ 110  
VVZ 110  
M6x10  
50 Hz  
80% VRRM  
K/W  
800  
700  
600  
500  
400  
300  
200  
100  
0.6  
IFSM  
ZthJC  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TVJ = 45°C  
94  
80  
72  
26  
26  
TVJ = 125°C  
C
~
D
~
E ~  
A
+
B -  
3
4
2
1
5
6
10-3  
10-2  
10-1  
100  
t
101  
10-3  
10-2  
10-1  
100  
101  
s
s
t
12  
25  
66  
Fig. 3 Surge overload current  
IFSM: Crest value, t: duration  
Fig. 4 Transientthermalimpedance  
junction to case (per leg)  
© 2000 IXYS All rights reserved  
2 - 2  
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