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5LP01M

型号:

5LP01M

描述:

超高速开关应用[ ULTRAHIGH-SPEED SWITCHING APPLICATIONS ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

43 K

Ordering number:ENN6135  
P-Channel Silicon MOSFET  
5LP01M  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 2.5V drive.  
2158  
[5LP01M]  
0.3  
0.15  
3
0 to 0.1  
1
2
0.3  
0.6  
0.65 0.65  
2.0  
0.9  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : MCP3  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
–50  
±10  
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
A
GSS  
I
–0.07  
–0.28  
0.15  
150  
D
Drain Current (pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
A
DP  
P
D
Tch  
W
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–50  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=–1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
I
=–50V, V =0  
–10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±8V, V =0  
DS  
±10  
GSS  
V
(off)  
=–10V, I =–100µA  
D
=–10V, I =–40mA  
D
=–40mA, V =–4V  
GS  
=–20mA, V =–2.5V  
GS  
–0.4  
70  
–1.4  
GS  
| yfs |  
Forward Transfer Admittance  
100  
mS  
R
(on)1  
18  
20  
30  
23  
28  
60  
DS  
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
I
I
D
D
=–5mA, V =–1.5V  
GS  
Marking : XB  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31000TS (KOTO) TA-2040 No.6135-1/4  
5LP01M  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Ciss  
Coss  
Crss  
V
V
V
=–10V, f=1MHz  
=–10V, f=1MHz  
=–10V, f=1MHz  
7.4  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
4.2  
1.3  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
20  
d(on)  
t
35  
r
Turn-OFF Delay Time  
Fall Time  
t
160  
150  
1.40  
0.16  
0.23  
–0.85  
d(off)  
t
f
Qg  
Total Gate Charge  
V
V
V
=–10V, V =–10V, I =–70mA  
GS  
=–10V, V =–10V, I =–70mA  
GS  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain "Miller" Charge  
Diode Forward Voltage  
Qgs  
Qgd  
D
=–10V, V =–10V, I =–70mA  
GS  
D
V
I =–70mA, V =0  
–1.2  
SD  
S
GS  
Switching Time Test Circuit  
V
=--25V  
DD  
V
IN  
0V  
--4V  
I
=--40mA  
L
D
V
R =625Ω  
IN  
PW=10µs  
D.C.1%  
D
V
OUT  
G
5LP01M  
P. G  
50Ω  
S
I
-- V  
I
-- V  
DS  
D
GS  
D
--0.14  
--0.07  
--0.06  
--0.05  
V
=--10V  
DS  
--0.12  
--0.10  
--0.04  
--0.08  
--0.06  
--0.04  
--0.03  
--0.02  
V
=--1.5V  
GS  
--0.01  
0
--0.02  
0
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
--3.0  
--3.5  
--4.0  
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0  
Drain-to-Source Voltage, V  
– V  
Gate-to-Source Voltage, V  
– V  
GS  
DS  
IT00090  
IT00091  
R
DS  
(on) -- V  
R (on) -- I  
DS D  
GS  
40  
35  
5
V
=--4V  
Ta=25°C  
GS  
3
2
30  
25  
Ta=75°C  
25°C  
I =20mA  
D
40mA  
20  
--25°C  
15  
10  
10  
--0.01  
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
– V  
--8  
--9  
--10  
2
3
5
7
2
3
Gate-to-Source Voltage, V  
GS  
Drain Current, I --A0.1  
D
IT00092  
IT00093  
No.6135-2/4  
5LP01M  
R
(on) -- I  
R (on) -- I  
DS  
DS  
D
D
7
5
7
5
V
=--2.5V  
V
=--1.5V  
GS  
GS  
3
2
Ta=75°C  
25°C  
Ta=75°C  
3
2
100  
--25°C  
7
5
25°C  
--25°C  
3
2
10  
--0.01  
10  
--0.001  
2
3
5
7
2
3
2
3
5
7
2
3
Drain Current, I --A0.1  
Drain Current, I --0A.01  
D
D
IT00094  
IT00095  
R (on) -- Ta  
DS  
yfs -- I  
D
40  
5
V
=--10V  
DS  
3
2
35  
30  
0.1  
25  
20  
7
5
3
2
15  
10  
0.01  
--0.01  
2
3
5
7
2
3
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Ambient Temperature, Ta – ˚C  
Drain Current, I --0A.1  
D
IT00096  
IT00097  
I
-- V  
SD  
SW Time -- I  
D
F
1000  
3
2
V
V
=--25V  
=--4V  
V
=0  
DD  
GS  
GS  
7
5
3
2
t
f
--0.1  
t (off)  
d
7
5
100  
7
5
t
3
2
r
3
2
t (on)  
d
--0.01  
--0.5  
10  
--0.01  
--0.6  
--0.7  
--0.8  
--0.9  
--1.0  
--1.1  
--1.2  
IT00098  
2
3
5
7
--0.1  
IT00099  
Diode Forward Voltage, V  
– V  
SD  
Drain Current, I – A  
D
V
-- Qg  
Ciss, Coss, Crss -- V  
DS  
GS  
--10  
100  
V
=--10V  
f=1MHz  
DS  
7
5
--9  
--8  
--7  
I =--70mA  
D
3
2
10  
Ciss  
7
5
--6  
--5  
--4  
--3  
--2  
Coss  
3
2
Crss  
1.0  
7
5
3
2
--1  
0
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
--5  
--10 --15 --20 --25 --30 --35  
--40 --45  
--50  
Drain-to-Source Voltage, V  
– V  
Total Gate Charge, Qg – nC  
DS  
IT00100  
IT00101  
No.6135-3/4  
5LP01M  
P
-- Ta  
D
0.20  
0.15  
0.10  
0.05  
0
Ambient6T0emperature,1T00a – ˚C  
0
20  
40  
80  
120  
140  
160  
IT00102  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of March, 2000. Specifications and information herein are subject to  
change without notice.  
PS No.6135-4/4  
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