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5LP01M_06

型号:

5LP01M_06

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

4 页

PDF大小:

73 K

Ordering number : EN6135A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
5LP01M  
General-Purpose Switching Device  
Applications  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
2.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--50  
±10  
DSS  
GSS  
V
V
I
--0.07  
--0.28  
0.15  
150  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--1mA, V =0V  
Unit  
min  
--50  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=--50V, V =0V  
GS  
--1  
±10  
--1.4  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
V (off)  
GS  
=--10V, I =--100µA  
--0.4  
70  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--40mA  
100  
18  
mS  
D
R
(on)1  
(on)2  
(on)3  
I
I
I
=--40mA, V =--4V  
GS  
23  
28  
60  
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
=--20mA, V =--2.5V  
GS  
20  
=--5mA, V =--1.5V  
GS  
30  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : XB  
Ciss  
V
DS  
V
DS  
V
DS  
=--10V, f=1MHz  
=--10V, f=1MHz  
=--10V, f=1MHz  
7.4  
4.2  
1.3  
pF  
pF  
pF  
Coss  
Crss  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
http://semicon.sanyo.com/en/network  
71206 / 42006PE MS IM TB-00002113 / 31000 TS (KOTO) TA-2040 No.6135-1/4  
5LP01M  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
t (on)  
Conditions  
Unit  
min  
max  
Turn-ON Delay Time  
Rise Time  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
20  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
d
t
r
35  
160  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
150  
f
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Diode Forward Voltage  
Qg  
Qgs  
Qgd  
V
V
V
=--10V, V =--10V, I =--70mA  
GS  
1.40  
0.16  
0.23  
--0.85  
DS  
DS  
DS  
D
=--10V, V =--10V, I =--70mA  
GS  
D
=--10V, V =--10V, I =--70mA  
GS  
D
V
SD  
I =--70mA, V =0V  
GS  
--1.2  
S
Package Dimensions  
unit : mm  
Switching Time Test Circuit  
7023-010  
V
= --25V  
DD  
D
V
IN  
0V  
--4V  
0.3  
0.15  
I
= --40mA  
D
3
V
R =625  
IN  
L
PW=10µs  
D.C.1%  
V
OUT  
0 to 0.1  
G
1
2
5LP01M  
0.65 0.65  
0.3  
0.6  
P. G  
50Ω  
0.9  
2.0  
S
1 : Gate  
2 : Source  
3 : Drain  
SANYO : MCP  
I
-- V  
DS  
I
-- V  
GS  
D
D
--0.14  
--0.07  
--0.06  
--0.05  
V = --10V  
DS  
--0.12  
--0.10  
--0.04  
--0.08  
--0.06  
--0.04  
--0.03  
--0.02  
V = --1.5V  
GS  
--0.01  
0
--0.02  
0
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
--3.0  
--3.5  
--4.0  
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0  
IT00090  
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00091  
DS  
R
DS  
(on) -- V  
R
DS  
(on) -- I  
GS  
D
40  
35  
5
V = --4V  
GS  
Ta=25°C  
3
2
30  
25  
Ta=75°C  
25°C  
I = --40mA  
D
--20mA  
20  
--25°C  
15  
10  
10  
--0.01  
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
--8  
--9  
--10  
2
3
5
7
2
3
--0.1  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00092  
Drain Current, I -- A  
D
IT00093  
No.6135-2/4  
5LP01M  
R
(on) -- I  
R
DS  
(on) -- I  
DS  
D
D
7
5
7
5
V = --1.5V  
GS  
V
GS  
= --2.5V  
3
2
Ta=75°C  
25°C  
Ta=75°C  
3
2
100  
--25°C  
7
5
25°C  
--25°C  
3
2
10  
--0.01  
10  
--0.001  
2
3
5
7
2
3
2
3
5
7
2
3
--0.1  
--0.01  
IT00094  
IT00095  
Drain Current, I -- A  
Drain Current, I -- A  
D
D
R (on) -- Ta  
DS  
yfs -- I  
D
40  
5
V = --10V  
DS  
3
2
35  
30  
0.1  
25  
20  
7
5
3
2
15  
10  
0.01  
--0.01  
2
3
5
7
2
3
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
--0.1  
Ambient Temperature, Ta -- °C  
IT00096  
Drain Current, I -- A  
D
IT00097  
I
S
-- V  
SD  
SW Time -- I  
D
1000  
3
2
V = --25V  
DD  
V = --4V  
GS  
V =0V  
GS  
7
5
3
2
t
f
--0.1  
t (off)  
d
7
5
100  
7
5
t
r
3
2
3
2
t (on)  
d
--0.01  
--0.5  
10  
--0.01  
--0.6  
--0.7  
--0.8  
--0.9  
--1.0  
--1.1  
--1.2  
IT00098  
2
3
5
7
--0.1  
IT00099  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
V
GS  
-- Qg  
Ciss, Coss, Crss -- V  
DS  
--10  
100  
V
= --10V  
f=1MHz  
DS  
7
5
--9  
--8  
--7  
I = --70mA  
D
3
2
10  
Ciss  
7
5
--6  
--5  
--4  
--3  
--2  
Coss  
3
2
Crss  
1.0  
7
5
3
2
--1  
0
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
--5  
--10 --15 --20 --25 --30 --35  
--40 --45  
--50  
Drain-to-Source Voltage, V  
DS  
-- V  
Total Gate Charge, Qg -- nC  
IT00100  
IT00101  
No.6135-3/4  
5LP01M  
P
D
-- Ta  
0.20  
0.15  
0.10  
0.05  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
IT00102  
Ambient Temperature, Ta -- °C  
Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of April, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.6135-4/4  
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