TRANSISTOR (PNP)
S8550
TO-92
FEATURES
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
1. EMITTER
2. BASE
-
ICM : 0.5
A
3. COLLECTOR
Collector-base voltage
V(BR)CBO : 40
V
-
1 2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
V
-
Collector-base breakdown voltage
V(BR)CBO
40
Ic= 100μA , IE=0
-
-
Collector-emitter breakdown voltage V(BR)CEO
Ic= 0.1 mA， IB=0
25
5
V
-
-
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
-
V
IE= 100μA， IC=0
-
VCB= 40 V ,
IE=0
IB=0
0.1
-
μA
μA
μA
-
-
-
ICEO
VCE= 20 V ,
V =
0.2
0.1
IEBO
3
V， IC=0
-
EB
HFE（1）
HFE（2）
VCE(sat)
VBE(sat)
VBE
VCE=-1 V, IC= 50mA
85
50
300
DC current gain(note)
VCE=-1 V, IC= 500mA
-
-
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
IC= 500mA, IB= 50 mA
0.6
1.2
1.4
V
V
V
IC=-500mA, IB= 50 mA
IE=-100mA
-
-
-
VCE= 6 V, IC=-20mA
Transition frequency
150
MHz
fT
f = 30MHz
CLASSIFICATION OF HFE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
