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4N60L-TF3-T

型号：

4N60L-TF3-T

描述：

4安培， 600伏特N沟道功率MOSFET[ 4 Amps, 600 Volts N-CHANNEL POWER MOSFET ]

品牌：

UTC[ Unisonic Technologies ]

页数：

8 页

PDF大小：

152 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N60  
Power MOSFET  
4 Amps, 600 Volts  
N-CHANNEL POWER MOSFET  
1
ꢀ
DESCRIPTION  
TO-220  
The UTC 4N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristics. This power MOSFET is usually used at high speed  
switching applications in power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
1
TO-220F  
ꢀ
FEATURES  
*Pb-free plating product number: 4N60L  
* RDS(ON) = 2.5Ω @VGS = 10 V  
* Ultra low gate charge ( typical 15 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  
* Fast switching capability  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
ꢀ
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ꢀ
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
4N60-TA3-T  
4N60-TF3-T  
4N60L-TA3-T  
4N60L-TF3-T  
TO-220  
G
G
Tube  
Tube  
TO-220F  
4N60L-TA3-T  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(1) T: Tube, R: Tape Reel  
(2) TA3: TO-220, TF3: TO-220F  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 8  
QW-R502-061,E  
4N60  
Power MOSFET  
ꢀ
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
600  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±30  
V
Avalanche Current - (Note 1)  
IAR  
4.4  
A
TC = 25°C  
4.0  
A
Continuous Drain Current  
ID  
TC = 100°C  
2.8  
A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)  
Avalanche Energy, Single Pulsed (Note 2)  
Avalanche Energy, Repetitive, Limited by TJMAX  
Peak Diode Recovery dv/dt (Note 3)  
Power Dissipation (TC = 25°C)  
IDM  
EAS  
EAR  
dv/dt  
PD  
16  
A
260  
mJ  
mJ  
V/ns  
W
10.6  
4.5  
106  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
℃
℃
Storage Temperature  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
MAX  
62.5  
3
UNIT  
°C/W  
°C/W  
°C/W  
Junction-to-Ambient  
Junction-to-Case  
Case-to-Sink  
θJC  
θCS  
0.5  
ꢀ
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Off Characteristics  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
VGS = 0 V, ID = 250 µA  
VDS = 600 V, VGS = 0 V  
VDS = 480 V, TC = 125°C  
VGS = 30 V, VDS = 0 V  
VGS = -30 V, VDS = 0 V  
600  
V
10  
µA  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
100 µA  
100 nA  
-100 nA  
Forward  
Reverse  
IGSS  
Breakdown Voltage Temperature  
Coefficient  
△BVDSS/△T  
J ID = 250 µA, Referenced to 25°C  
0.6  
4.0  
V/℃  
On Characteristics  
Gate Threshold Voltage  
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic Characteristics  
Input Capacitance  
VGS(TH)  
RDS(ON)  
gFS  
VDS = VGS, ID = 250 µA  
2.0  
4.0  
2.5  
V
Ω
S
VGS = 10 V, ID = 2.2 A  
VDS = 50 V, ID = 2.2 A (Note 4)  
CISS  
COSS  
CRSS  
520 670 pF  
VDS = 25 V, VGS = 0 V, f = 1MHz  
Output Capacitance  
70  
8
90  
11  
pF  
pF  
Reverse Transfer Capacitance  
Switching Characteristics  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
13  
35  
ns  
Turn-On Rise Time  
VDD = 300V, ID = 4.0 A, RG = 25Ω  
(Note 4, 5)  
45 100 ns  
Turn-Off Delay Time  
25  
35  
60  
80  
20  
ns  
ns  
Turn-Off Fall Time  
Total Gate Charge  
QG  
15  
nC  
nC  
nC  
VDS= 480V,ID= 4.0A, VGS= 10 V  
Gate-Source Charge  
Gate-Drain Charge  
QGS  
QDD  
3.4  
7.1  
(Note 4, 5)  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Source- Drain Diode Ratings and Characteristics  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source  
Diode Forward Current  
VSD  
IS  
VGS = 0 V, IS = 4.4 A  
1.4  
4.4  
V
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
17.6  
A
Reverse Recovery Time  
tRR  
V
GS = 0 V, IS = 4.4 A,  
250  
1.5  
ns  
dIF/dt = 100 A/µs (Note 4)  
Reverse Recovery Charge  
QRR  
µC  
Notes: 1. Repetitive Rating : Pulse width limited by TJ  
2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
3. ISD ≤ 4.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%  
5. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
VGS=  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON )  
tD(OFF)  
Pulse Width ≤ 1μs  
Duty Factor ≤0.1%  
tF  
tR  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Same Type  
as D.U.T.  
50kΩ  
QG  
12V  
10V  
0.3μF  
0.2μF  
VDS  
QGS  
QGD  
VGS  
DUT  
VG  
3mA  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
RD  
VDD  
10V  
D.U.T.  
tp  
IAS  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
ꢀ
TYPICAL CHARACTERISTICS  
Breakdown Voltage Variation vs.  
Temperature  
On-Resistance Junction Temperature  
1.2  
3.0  
2.5  
2.0  
1.1  
1.0  
1.5  
1.0  
Note:  
1. VGS=10V  
2. ID=4A  
Note:  
1. VGS=0V  
2. ID=250µA  
0.9  
0.8  
0.5  
0.0  
-50  
-100  
0
50 100 150 200  
0
200  
-100 -50  
50 100 150  
Junction Temperature, TJ (℃)  
Junction Temperature, TJ (℃)  
Maximum Drain Current vs. Case  
Temperature  
Maximum Safe Operating Area  
5
4
Operation in This Area is Limited by  
RDS(on)  
100µs  
10  
1ms  
3
2
10ms  
DC  
1
Notes:  
1. TJ=25℃  
2. TJ=150℃  
3. Single Pulse  
1
0
0.1  
1
10  
100  
1000  
25 50  
75 100 125  
Case Temperature, TC (℃)  
Drain-Source Voltage, VDS (V)  
On-State Characteristics  
Transfer Characteristics  
VGS  
Top: 10V  
10  
10  
1
9V  
8V  
7V  
6V  
25℃  
5.5V  
5 V  
Bottorm :5.0V  
1
5.0V  
150℃  
Notes:  
1. 250µs Pulse Test  
2. TC=25℃  
0.1  
Notes:  
1. VDS =50V  
2. 250µs Pulse Test  
0.1  
2
4
6
8
10  
0.1  
1
10  
Gate-Source Voltage, VGS (V)  
Drain-to-Source Voltage, VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
ꢀ
TYPICAL CHARACTERISTICS(Cont.)  
On State Current vs. Allowable Case  
On-Resistance Variation vs. Drain  
Current and Gate Voltage  
Temperature  
6
10  
5
4
150℃  
VGS=20V  
VGS=10V  
25℃  
3
2
1
Notes:  
1. VGS=0V  
2. 250µs Test  
1
0
Note: TJ=25℃  
0.1  
0.2 0.4 0.6  
0
2
4
6
8
10 12  
0.8 1.0 1.2 1.4 1.6 1.8  
Drain Current, ID (A)  
Source-Drain Voltage, VSD (V)  
Capacitance Characteristics  
(Non-Repetitive)  
Gate Charge Characteristics  
12  
10  
8
1200  
Ciss=Cgs+Cgd (Cds=shorted )  
Coss=Cds+Cgd Crss=Cgd  
VDS=300V  
VDS=480V  
1000  
800  
C
iss  
Notes:  
1. VGS=0V  
VDS=120V  
Coss  
6
600  
400  
200  
2. f = 1MHz  
4
2
Crss  
Note: ID=4A  
0
0
20  
0
5
10  
15  
25  
0.1  
1
10  
Total Gate Charge, QG (nC)  
Drain-SourceVoltage, VDS (V)  
Transient Thermal Response  
Curve  
Power Dissipation  
120  
100  
80  
1
0.1  
60  
40  
Notes:  
1. θJC (t) = 1.18℃/W Max.  
2. Duty Factor , D=t1/t2  
3.TJM-TC=PDM×θJC (t)  
20  
0
0.01  
1E-5  
1E-4 1E-3 0.01 0.1  
1
10  
0 20 40 60 80 100 120140 160  
(°C)  
Square Wave Pulse Duration, t1 (sec)  
T
C
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
4N60  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
QW-R502-061,E  
www.unisonic.com.tw  
厂商 型号 描述 页数 下载

UTC

 		4N60 4安培， 600伏特N沟道功率MOSFET[ 4 Amps, 600 Volts N-CHANNEL POWER MOSFET ] 8 页

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