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VUO70-14NO7

型号:

VUO70-14NO7

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

63 K

VUO 70  
IdAV = 70 A  
VRRM = 800-1600 V  
Three Phase  
Rectifier Bridge  
A
VRSM  
V
VRRM  
V
Types  
E
D
C
900  
800  
VUO 70-08NO7  
VUO 70-12NO7  
VUO 70-14NO7  
VUO 70-16NO7  
1300  
1500  
1700  
1200  
1400  
1600  
B
Symbol  
Conditions  
TC = 100°C, module  
Maximum Ratings  
Features  
• Package with copper base plate  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Low forward voltage drop  
• ¼" fast-on power terminals  
IdAV  
IFSM  
70  
A
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
550  
600  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
500  
550  
A
A
Applications  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1520  
1520  
A2s  
A2s  
• Supplies for DC power equipment  
• Input rectifiers for PWM inverter  
• Battery DC power supplies  
• Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1250  
1250  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VISOL  
50/60 Hz, RMS t = 1 min  
ISOL 1 mA t = 1 s  
2500  
3000  
V~  
V~  
I
• Small and light weight  
Md  
Mounting torque (M5)  
(10-32 UNF)  
5 ± 15 %  
44 ± 15 % lb.in.  
Nm  
Weight  
typ.  
110  
g
Symbol  
IR  
Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
VR = VRRM  
;
;
TVJ = 25°C  
TVJ = TVJM  
0.5 mA  
10 mA  
VR = VRRM  
VF  
IF = 150 A;  
TVJ = 25°C  
1.7  
V
VT0  
rT  
For power-loss calculations only  
0.8  
8
V
mΩ  
RthJC  
RthJH  
per diode; DC current  
per module  
per diode, DC current  
per module  
1.45 K/W  
0.242 K/W  
1.9 K/W  
0.317 K/W  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
16.1 mm  
7.5 mm  
50 m/s2  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
VUO 70  
I
F(OV)  
FSM  
4
------  
I
10  
30  
A
I
(A)  
FSM  
2
As  
TVJ=45°C  
TVJ=150°C  
500  
T=150°C  
25  
1.6  
1.4  
1.2  
1
550  
20  
15  
10  
5
TVJ=45°C  
3
10  
TVJ=150°C  
0
V
RRM  
0.8  
0.6  
1/2  
1
V
RRM  
I
T=25°C  
1
F
V
RRM  
2
10  
0
1
2
t
4
6
10  
V
F
V
[ms]  
1.5  
0.4  
10  
0
1
2
3
10 t[ms] 10  
10  
Fig.1 Forwardcurrentversus  
voltagedropperdiode  
Fig. 2 Surge overload current per diode  
Fig. 3 i2dt versus time  
I
FSM: Crest value. t: duration  
(1-10ms) per diode or thyristor  
100  
80  
[A]  
200  
TC  
DC  
[W]  
PSD 41  
105  
0.38 0.26  
0.51  
=
RTHCA [K/W]  
sin.180°  
rec.120°  
rec.60°  
rec.30°  
175  
150  
125  
100  
110  
115  
120  
125  
130  
135  
140  
145  
60  
40  
20  
0.76  
1.26  
2.76  
75  
DC  
50  
25  
sin.180°  
rec.120°  
rec.60°  
rec.30°  
I
dAV  
0
50  
100  
150  
200  
°C  
PVTOT  
T
(°C)  
150  
C
0
0
50  
100  
150  
20  
IFAVM  
40  
60  
[A]  
Tamb  
[K]  
Fig. 4 Power dissipation versus direct output current and  
ambient temperature  
Fig.5  
Maximum forward current  
at case temperature  
3
K/W  
Z
thJK  
2
Z
thJC  
1
Z
th  
0.01  
0.1  
1
10  
t[s]  
Fig. 6 Transient thermal impedance per diode or Thyristor, calculated  
© 2003 IXYS All rights reserved  
2 - 2  
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