ADVANCE TECHNICAL INFORMATION
MegaMOSTMFET
IXTC 75N10 V
= 100 V
= 72 A
= 20 mΩ
DSS
I
D25
N-Channel Enhancement Mode
R
DS(on)
Symbol
TestConditions
Maximum Ratings
ISOPLUS220TM
VDSS
VDGR
TJ = 25°C to 150°C
100
100
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TC = 25°C
72
A
A
G
D
S
TC = 25°C, pulse width limited by TJM
300
Isolated back surface*
D = Drain,
PD
TC = 25°C
230
W
G = Gate,
S = Source
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
* Patent pending
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
Weight
2
g
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
l
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Ruggedpolysilicongatecellstructure
Lowpackageinductance(<5nH)
- easy to drive and to protect
Fastswitchingtimes
l
l
l
l
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
Switch-modeandresonant-mode
power supplies
l
Motorcontrols
l
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
100
2
V
V
Uninterruptible Power Supplies (UPS)
l
DC choppers
VGS(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 µA
Advantages
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
l
Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
1
mA
l
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Space savings
0.020
Ω
l
High power density
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98881 (1/2)
