找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

CYIA2SC0300AA-BQE

型号:

CYIA2SC0300AA-BQE

描述:

1/3“ VGA格式CMOS图像传感器[ 1/3” VGA-Format CMOS Image Sensor ]

品牌:

CYPRESS[ CYPRESS ]

页数:

18 页

PDF大小:

735 K

CYIA2SC0300AA-BQE  
1/3” VGA-Format CMOS Image Sensor  
Features  
1
Sensor Architecture  
The diagram in Figure 1 shows the major functional blocks of  
the imager. These blocks include:  
• VGA Resolution  
• 1/3” Optical Format  
• Automotive Grade device  
• 120 db Dynamic Range  
• 60 PIN CBGA  
• Image sensor array  
• Row control circuitry  
• Column sense circuitry  
• Analog-to-digital converters  
• Timing and control logic  
• Program registers  
• Low power dissipation  
Functional Description  
Cypress IM103 is Automotive grade CMOS Image Sensor with  
®
• Digital-output shift registers  
high dynamic range (120 db). IM103 is built with Autobrite  
Sensor array: The sensor array consists of an optically active  
482 row X 642 column matrix, with 18 additional dark columns  
on right side of the array (the array is described more fully in  
section 3). Each sensing element (pixel) is 8 µm X 8 µm in size.  
technology useful for Automotive Vision Systems which  
produce crisp clear video in visible and near IR wavelengths.  
Device can be used for Lane departure working, Night Vision,  
Adaptive Cruise control, driver drowsiness etc.  
Timing and control circuitry: The sensor uses two clocks  
(data strobe or DSTR, and system clock or SCLK). Data strobe  
controls the timing of the output shift registers, while SCLK  
controls exposure and data conversion timing. Clocking  
details are given in section 5.  
Introduction  
This document describes the automotive grade IM103 1/3”  
format VGA CMOS image sensor. The description covers:  
• Architecture  
• Operation  
Column circuitry: The column circuitry includes a column  
amplifier (with correlated double sampling [CDS] capability)  
and a 12-bit analog-to-digital converter (ADC). Multiple ADCs  
operate in parallel across the array.  
• Wide-dynamic-range capture  
• Register settings  
• Electrical and electro-optical specifications  
Output registers: Data from the ADCs are shifted into a  
parallel-in/serial-out 24-bit-wide row buffer. Data are shifted  
out to the parallel data I/O from the buffer after each row of  
data is converted.  
This imager chip can be supplied in several different  
configurations including:  
• Monochrome or color pixel array  
D0  
Sensor Array  
D1  
D2  
D3  
D4  
ROW  
SCLK  
Column Amplifiers/CDS  
Analog/Digital Converters  
D5  
D6  
D7  
RESET  
Data Shift Registers  
WE  
OE  
DSTR  
Figure 1. IM103 Image Sensor Block Diagram.  
Cypress Semiconductor Corporation  
Document #: 001-11358 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
Revised October 13, 2006  
408-943-2600  
CYIA2SC0300AA-BQE  
Control registers: Several on-chip programmable registers  
control exposure timing, digital gain, power, and dynamic  
range compression. These registers are described in more  
detail in section 7.  
2
Pin Description  
The image sensor is packaged in a 60-pin CBGA. Only 41 of the 60 balls are active (Figure 2). These active pins are listed in  
Table 1, and include 8 digital I/O lines, 2 clock inputs, 8 power supply pins, 15 ground pins, 3 analog references, a  
row-synchronization output, a test I/O, an initialization input, and 2 control inputs.  
Pinout  
1
2
3
4
5
6
7
8
9
10  
A
B
C
D
E
F
VDDIO  
GNDIO  
D7  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
GPIO  
NC  
VDDA  
GNDA  
VDDA  
VDDA  
GNDA  
GNDA  
NC  
NC  
VDDIO  
D5  
VREFP  
GNDA  
VREFM  
VCM  
D4  
D6  
GNDIO  
D3  
GNDIO  
D2  
VDDD  
SCLK  
GNDD  
RESET  
VDDD  
VDDD  
GNDD  
NC  
G
H
J
D1  
GNDIO  
GNDIO  
GNDIO  
GNDIO  
NC  
GNDIO  
DSTR  
D0  
NC  
NC  
NC  
NC  
OE_N  
GNDD  
NC  
ROW  
WE_N  
= NC  
= depopulated  
Figure 2. Pin Diagram for the IM103 VGA-format Image Sensor  
Table 1. IM103 Pin Assignments  
[1, 2]  
[3]  
[4]  
Pin Name  
Function  
Class  
P
Type  
PWR  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
O
A2,B1  
C2  
D2  
C1  
D1  
F1  
VDDIO  
D7  
I/O Power  
th  
Data I/O 7 bit (MSB)  
th  
D
D6  
Data I/O 6 bit  
th  
D
D5  
Data I/O 5 bit  
th  
D
D4  
Data I/O 4 bit  
rd  
D
D3  
Data I/O 3 bit  
nd  
D
F2  
D2  
Data I/O 2 bit  
st  
D
G1  
H4  
J5  
D1  
Data I/O 1 bit  
th  
D
D0  
Data I/O 0 bit (LSB)  
D
ROW  
Row Sync Out  
I/O Ground  
D
B2,E1,E2,G2,H1,H2,H3, J2 GNDIO  
P
GND  
I
J3  
DSTR  
OE_N  
WE_N  
GNDD  
SCLK  
VDDD  
RESET  
GPIO  
Data Strobe Clock  
Output Enable  
Write Enable  
Digital Ground  
System Clock  
Digital Power  
D
H8  
D
I
J7  
D
I
J8,H9,H10  
P
GND  
I
G9  
D
F9,F10,G10  
P
PWR  
I
J9  
Sensor Reset/Initialization  
D
A7  
General-purpose I/O pin. Primarily used for testing  
Common-mode Voltage Capacitor  
D/A  
A
I/O  
O
E10  
D10  
VCM  
VREFM  
Lower A/D Ref. Voltage Capacitor  
A
O
Notes:  
1. NC = No Connect.  
2. The sensor is seen from the top (glass-lid) side in this view.  
3. P = Power/Ground  
D = Digital  
A = Analog  
4. PWR = Power Supply  
GND = Ground  
I/O = Bidirectional Input/Output  
I = Input  
O = Output  
Document #: 001-11358 Rev. **  
Page 2 of 18  
CYIA2SC0300AA-BQE  
Table 1. IM103 Pin Assignments(continued)  
Pin Name  
GNDA  
[3]  
[4]  
Function  
Class  
Type  
GND  
O
B8,C9,C10  
B10  
Analog Ground  
P
A
P
VREFP  
VDDA  
Positive A/D Ref. Voltage Capacitor  
Analog Power  
A8,A9,B9  
PWR  
The major pin groups are described below:  
GPIO: This pin is used primarily for test purposes during  
manufacturing. The pin can also be enabled with certain  
register settings to acquire data for noise correction. If the pin  
is not being used for noise correction, the recommended  
configuration is to tie it to ground through a 1-Mohm resistor.  
Digital I/O (D0-D7): These eight pins are bidirectional,  
tri-stateable digital I/O pins. The state of the pins is determined  
by WE and OE. In output mode, the eight pins are used to send  
image data out of the sensor to the system; in input mode, the  
eight pins are used to receive programming data for the  
on-chip registers.  
Analog Reference Pins (VREFM, VREFP, VCM): These pins  
are used to connect bypass capacitors for the three voltage  
references: negative reference (VREFM), positive reference  
(VREFP), and analog common-mode (VCM). The recom-  
mended bypass circuit is shown in Figure 3.  
Write Enable and Output Enable (WE and OE): These two  
pins control the digital I/O pins. They determine whether the  
I/O pins are in programming, output, or high-impedance  
(tri-state) mode. Table 2 presents the I/O state as a function of  
WE and OE settings.  
The 3 analog references should be bypassed with at least  
0.1-µF ceramic capacitors. Cypress recommends the use of  
0402-sized chip capacitors placed as close as possible to the  
package and sharing GNDA as the common node.  
Table 2. Data I/O Table  
WE  
OE  
Data I/O State  
VDDA  
HIGH  
LOW  
HIGH  
LOW  
HIGH Tri-state  
HIGH Input (write) enabled  
LOW Output (data out) enabled  
LOW Undefined  
VDDIO  
VREFP  
GNDA  
VREFM  
VCM  
Note: To minimize temporal noise the use of tri-state mode  
should be avoided during active operation of the image sensor.  
Either (a) active driving of the data bus or (b) use of pull-ups  
to define a known logic level is recommended during active  
operation. Tri-state mode can be used when the image sensor  
is in standby.  
VDDD  
RESET: This pin is used to initialize the sensor. It is normally  
HIGH during operation, and should be brought LOW for at  
least 100 µs to initialize the sensor and set the default register  
values.  
Figure 3. Bypass capacitor circuit for VREFM, VREFP,  
VCM, VDDIO and VDDA. Recommended bypasscapacitor  
value is 0.1 µF.  
The RESET signal also may be used as a chip enable. When  
RESET is LOW, the image sensor goes into sleep mode.  
Standby power in this situation is <0.5 mW. The sensor is  
brought out of sleep mode by setting RESET to HIGH.  
Supply pins (VDDD, VDDIO, VDDA): These three pins  
separately supply power for digital circuitry (VDDD), I/O  
(VDDIO), and analog circuitry (VDDA). The supplies are run  
on separate busses on the chip but are connected through  
ESD blocking diodes. Because of the ESD protection diodes,  
the three voltages should be kept at the same value.  
Data Strobe (DSTR) and System Clock (SCLK): These two  
clocks control the sensor. DSTR is used primarily to clock data  
out of the data shift registers. SCLK controls the row, frame,  
column circuit, and data conversion timings, as well as the  
program registers. The clocks can be asynchronous, but  
DSTR frequency must be at least 15X SCLK for 8-bit output  
format, and at least 22X SCLK for 12-bit output format.  
Clocking is described in more detail in section 5.  
Grounds (GNDD, GNDIO, GNDA): These three pins  
separately supply grounds for digital circuitry (GNDD), I/O  
(GNDIO), and analog circuitry (GNDA). The grounds run  
separately in metal, but are tied together through the silicon  
substrate in the circuit.  
Row Synchronization (ROW): This digital output pin  
provides a signal that goes HIGH at the end of each row  
readout. The signal goes LOW at the start of the next row.  
Document #: 001-11358 Rev. **  
Page 3 of 18  
CYIA2SC0300AA-BQE  
3
Imager Array Description  
Die photograph: A photograph of the IM103 die is shown in  
Figure 4. Major features of interest include:  
• Row control circuitry (to the left of the array as shown).  
• Column amplifiers/correlated double sample circuits and  
analog-to-digital converters, arranged above and below the  
image sensor array.  
• Data registers (arranged above/below the analog-to-digital  
converters).  
Image Array “Frame”: A schematic representation of the  
array is shown in Figure 5.  
Row drivers: As noted above, the row circuitry is located on  
the left side of the array. This circuitry controls various  
row-related signals (including the reset signal, the row select  
signal, and the hard/soft reset signal). Timing for the row  
drivers is controlled by SCLK.  
Column circuitry/ADCs: The column amplifiers/CDS circuits  
and analog-to-digital converters are located above and below  
the sensor array. Each column has its own amplifier/CDS  
circuit, while each ADC is shared between two columns.  
Timing for column sampling and analog-to-digital conversion  
is controlled by SCLK.  
The location of the column amplifiers and ADCs alternates  
between the top and bottom of the array, according to which  
pair of columns is being read out. Columns 0, 1, 4, 5, …, 4n,  
4n+1 use amplifiers and ADCs at the bottom of the array, while  
columns 2, 3, 6, 7, …, 4n+2, 4n+3 use amplifiers and ADCs at  
the top of the array.  
Figure 4. IM103 Die Photograph Showing the Physical  
Location of Major Functional Blocks  
. . . . . . . .  
. . . . . . . .  
ADC  
TOPIN1  
MUX  
CDS/AMP  
ROW481  
ROW480  
ROW479  
ROW478  
. . . . . . . .  
. . . . . . . .  
. . . . . . .  
Sensor Array  
ROW3  
ROW2  
ROW1  
ROW0  
. . . . . . . .  
. . . . . . . .  
. . . . . . .  
CDS/AMP  
MUX  
CDS/AMP  
Input fromregister0  
MUX  
ADC  
ADC  
Figure 5. Imager Frame, showing the row control shift register (to the left) and the column  
amplifiers/MUXes/ADCs (top and bottom)  
Document #: 001-11358 Rev. **  
Page 4 of 18  
CYIA2SC0300AA-BQE  
Data registers: Each ADC is followed by a 24-bit-deep data  
register which is read in serially. Data from the even columns  
(0, 2, 4 …) is read in first from MSB to LSB, followed by data  
from the odd columns, again from MSB to LSB (Figure 6). The  
read-in timing is derived from SCLK.  
Data are shifted out in parallel and then interleaved at the end  
of the register array to properly sequence odd and even  
column data from the top and bottom of the array. Data readout  
timing is controlled by DSTR.  
Image Array: The image array (Figure 7) contains 482  
optically active (light-sensitive) rows and 642 optically-active  
columns. In addition, 2 “dark” columns are provided on one  
side of the array.  
C o l .  
I
C o l . I + 1  
The array is addressed as shown in Figure 7. When package  
pin 1 is above the array, the dark columns are to the right of  
the array. Row addressing starts at the bottom of the array, and  
columns are read out from left to right.  
C D S / C o l u m  
n A m p s  
Using this arrangement, the first pixel to be read out during an  
exposure is at the bottom left of the array, while the last pixel  
to be read is at the top right.  
A n a l o g  
M U X  
1 2 - b i t R e c u r s i v e A D C  
L
S B  
C o l . I + 1  
M
L
S B  
S
B
C o l .  
I
M
S B  
Figure 6. Data Read-in Sequence for the Data Register  
Document #: 001-11358 Rev. **  
Page 5 of 18  
CYIA2SC0300AA-BQE  
. . . . . . . .  
. . . . . . . .  
TO PIN 1  
ROW 481  
ROW 480  
ROW 479  
ROW 478  
. . . . . . . .  
. . . . . . . .  
. . . .  
Sensor Array  
ROW 3  
ROW 2  
ROW 1  
ROW 0  
. . . .  
. . . . . . . .  
. . . . . . . .  
Figure 7. Image Sensor pixel array layout and color filter arrangement on pixel array. The first pixel to be read is a RED  
pixel. Package pin 1 is to the top, and the Data I/O pins are to the left in this drawing.  
NOTE: In a camera application, package pin 1 would be oriented toward the top of the subject, to account for the inverting nature  
of the optics.  
Document #: 001-11358 Rev. **  
Page 6 of 18  
CYIA2SC0300AA-BQE  
The source-follower gate provides a buffer between the  
relatively small capacitance associated with the photodiode  
node and the much larger capacitance on the column line.  
Row Select is used to connect all pixel source followers on a  
given row to the column line for readout.  
4
Pixel Description and Operation  
Pixel Design: The IM103 uses a three-transistor pixel built  
around an n-well photodiode (Figure 8). The pixel is  
connected by 2 power lines, 2 control lines, and an output line.  
The pixel has two operational sections: (1) a sensing section  
consisting of the reset MOS gate and the n-well photodiode,  
Pixel Operation in Linear Mode: Pixel operation in linear  
mode consists of the following steps:  
and (2)  
a
source-follower transistor and a row select gate.  
readout section consisting of an MOS  
• The pixel is reset by applying Vdd to the reset gate. This  
operation brings the photodiode potential to a value near  
Vdd.  
The potential of the n-well photodiode can be controlled by  
applying appropriate signals to the reset MOS gate and the  
reset Vdd line. These signals are used to reset the photodiode  
potential to a reference value for the start of integration, and  
also for wide-dynamic-range operation.  
• After reset, photons entering the silicon are converted to  
photoelectrons and collected on the positively charged  
photodiode node. As electrons accumulate on the  
photodiode, the potential of the photodiode relaxes towards  
ground.  
Vdd  
• After a predetermined period (the “integration time”, T ),  
int  
Row Select is pulsed high and the output transferred onto  
the column line and sampled by the column amplifier. Row  
Select is then brought low.  
Reset Vdd  
Barrier  
(Reset)  
• The pixel is reset, Row Select is pulsed high a second time,  
and the reset level transferred onto the column line and  
sampled by the column amplifier. This second readout (a  
“correlated double sample” or CDS) generates a  
self-referenced differential signal that eliminates several  
systematic errors due to device and layout mismatches.  
The number of photoelectrons collected by the photodiode is  
proportional to the intensity of the light hitting the pixel. The  
well capacitance varies slowly with potential, so that the output  
voltage change is approximately linear with respect to the  
number of electrons collected on the photodiode.  
Row  
Select  
A sketch of the time dependence of the pixel voltage is  
shown for several illumination levels in Figure 9. The  
corresponding output signals are also shown.  
Output  
(to CDS/ADC)  
Figure 8. Three-transistor Pixel Design used in the IM103  
Sensor Array  
Document #: 001-11358 Rev. **  
Page 7 of 18  
CYIA2SC0300AA-BQE  
Integration period  
Light Intensity  
Illumination  
Time  
Reset Voltage  
Photodiode Voltage  
Figure 9. Left: Sketch of photodiode pixel voltage vs. time showing how different light intensities affect this parameter.  
Right: Sketch of the corresponding sensor ADC output vs illumination.  
The response is linear with an eventual saturation.  
Pixel Operation in Wide-dynamic-range Mode: The pixel  
response can be made nonlinear by applying Cypress’s propri-  
etary variable height multiple reset method (Autobrite ).  
There are 48 SCLK periods per row, as shown in Figure 11.  
For 60-fps operation, the circuit requires SCLK to be  
approximately 1.5 MHz. SCLK is not required to have a 50%  
duty ratio. The pulse width may be very small compared to the  
clock period, but the minimum pulse width is 20 ns.  
®
The row control circuitry provides 8 variable reset levels (b0  
through b7), where b0 is Vdda = reset level, b7 is ground, and  
b1 through b6 are intermediate levels. Pixel response charac-  
teristics can be modified by changing the variable reset  
voltages and their timing.  
Row Synchronization: The only output from the image  
sensor besides the data bus is the ROW signal. The ROW  
signal stays HIGH for one SCLK period during a row time.  
When ROW goes HIGH, the system must stop reading data  
from the sensor. The period when ROW is HIGH is a good time  
to write data to the image sensor program registers  
(Figure 14).  
More details on implementing wide-dynamic-range operation  
can be obtained by contacting Cypress.  
5
Interfacing to the IM103  
When ROW falls, the most recently converted row of pixels  
may be read out of the row buffers by the system. The system  
may read out the data at any rate as long as readout is finished  
before the next ROW pulse (Figure 12). More restrictive data  
readout conditions that reduce temporal row noise are  
described below.  
Clock Requirements: The imager requires a steady system  
clock (SCLK) signal. SCLK sets the row rate, which in turn  
determines the frame rate. Figure 10 illustrates the  
relationship between DSTR and SCLK.  
Figure 10. Relationship between DSTR and SCLK  
NOTE: The relationship between DSTR and SCLK depends on output-data format. For 12-bit format, f  
must be at least 15 X f  
must be at least 22  
Page 8 of 18  
DSTR  
X f  
. For 8-bit format, f  
, as shown.  
SCLK  
DSTR  
SCLK  
Document #: 001-11358 Rev. **  
CYIA2SC0300AA-BQE  
Figure 11. Row Timing Diagram  
There are 48 SCLK cycles in each row period.  
Figure 12. Data Readout Timing  
Data is read out while ROW is low and OE is low. Data is ready for readout after the falling edge of ROW. All data must be read  
out before the rising edge of the next ROW signal. One 8-bit word is read out per DSTR clock cycle. 12-bit/pixel data format  
requires 3 DSTR clock cycles to read 2 pixels, while 8-bit/pixel data format requires 1 DSTR clock cycle/pixel.  
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
st  
1 CLOCK  
CYCLE  
nd  
2 CLOCK  
CYCLE  
rd  
3 CLOCK  
CYCLE  
st  
1 CLOCK  
CYCLE  
nd  
2 CLOCK  
CYCLE  
rd  
3 CLOCK  
CYCLE  
(a)  
(b)  
Figure 13. Data Output Format Sequence for (a) 12-bit and (b) 8-bit output-format modes  
Document #: 001-11358 Rev. **  
Page 9 of 18  
CYIA2SC0300AA-BQE  
Figure 14. Timing for Writing Data to the On-board Registers through the Data Bus.  
Data may be written to the sensor at any time. Data is updated to the registers on the falling edge of ROW.  
Data Readout: Data can be read out in different ways. DSTR  
is used to clock out the data, and it can be a constant clock  
signal or a strobe. If DSTR is a constant clock, the data is  
advanced only when OE is brought LOW. If the strobe  
approach is used, OE should be brought LOW first and then  
the system can strobe the data. When OE is brought HIGH,  
other devices like SRAM or FLASH may be active on the bus.  
OE should be synchronous to DSTR if the continuous clock  
method is used.  
as temporal row noise (i.e., random horizontal line flicker from  
frame to frame).  
To minimize this noise, it is recommended that DSTR be gated  
so that data readout is avoided during the sampling periods.  
The sclk periods when sampling occurs are 28-29 and 45 after  
a row goes high (out of 48 sclk periods).  
6
Programming the IM103  
The IM103 image sensor has 12 on-board 4-bit programmable  
registers for controlling its operation. All configuration of the  
imager is performed over the data bus. To set power, gain,  
data format, or other functions, the controller/host must write  
the appropriate words to the program registers.  
The format of the data is raster. The first valid byte of a row  
occurs after the rising edge of DSTR. The data output format  
(12-bit or 8-bit, as set by the user) significantly affects the data  
stream, as follows (Figure 13):  
In 12-bit data format mode, pixel data are separated and  
streamed as 8-bit words. Therefore, 3 cycles of DSTR are  
required to read out 2 pixels. In 12-bit mode, the first clock  
In order to write data, the data bus pins first must be set to input  
mode. This is accomplished by setting output enable (OE)  
high.  
st  
cycle reads out the 8 most significant bits of the 1 pixel. The  
second clock cycle reads out the 4 least significant bits from  
The programmable registers are updated when the write  
enable (WE) input signal goes low. Data on the data bus must  
be set up before WE is brought low and be held for a short time  
after WE is brought high (Figure 14).  
st  
the 1 pixel as the upper 4 bits of the output, and the 4 most  
nd  
significant bits of the 2 pixel as the lower 4 bits of the output.  
nd  
rd  
On the 3 cycle, the 8 least significant bits of the 2 pixel are  
th  
read out. The sequence repeats on the 4 cycle.  
The 8-bit word written to the data I/O lines contains 4 bits of  
address (the upper 4 bits, ADR(3)-ADR(0)) and 4 bits of  
program data (the lower 4 bits, P(3)-P(0)) (Figure 15).  
In 8-bit mode, the data come off the bus sequentially as  
complete pixel words.  
Clocking conditions for low temporal noise: Twice during  
the row period, the image sensor samples the pixel voltage  
levels of the row being read out. The sensor is most sensitive  
to noise during these sampling periods. In particular, readout  
of the data buffers may introduce noise into the circuit and  
disturb the sensor voltage levels. Such noise usually appears  
Figure 15. Configuration of the 8-bit Words used to  
Program the IM-103 On-board Registers  
Document #: 001-11358 Rev. **  
Page 10 of 18  
CYIA2SC0300AA-BQE  
7
Register Descriptions  
General descriptions of the 12 on-board registers are listed in  
Table 3. Detailed descriptions of the register bit functions are  
given in Tables Table 4 through Table 15.  
NOTE: Reserved registers should not be programmed differ-  
ently from the recommended values. If a reserved register is  
accidentally programmed differently, the sensor should be  
reinitialized using the RESET signal.  
NOTE: The on-board registers are set to the default values in  
Table 3 through Table 15 after a RESET signal.  
Table 3.IM103 On-chip Registers  
Register  
Function  
Default Value  
Recommended Value  
0
1
Frame start and dynamic range compression  
Noise reduction and reset control signals  
6
7
-
7 (hard reset) or  
3 (soft reset)  
2
3
Noise reduction control signals  
Noise reduction control signals  
2
3
A
F (hard reset) or  
E (soft reset)  
4
5
Reset level, clamp, and test pin analog modes  
GPIO pin modes  
8
0
8
0 (active pixel) or  
8 (ADC test)  
6
7
Reverse saturation control modes  
Data output format and gain settings  
Power setting  
1
0
2
F
1
8
2
-
8
4
9
Power management  
D
10  
11  
Variable reset level test and control  
Dynamic range compression control  
0 or 8 depending on desired compression  
0
Register 0: This register (Table 4) manages the start of frame and variable reset levels.  
Table 4.Register 0 Description  
Bit  
0
Name  
Default  
Function  
LSB of pixel reset/compression control  
nd  
b<0>  
b<1>  
b<2>  
rs  
0
1
1
0
1
2
bit of pixel reset/compression control  
2
MSB of pixel reset/compression control  
Starts frame capture (synchronous)  
3
b<0>, b<1>, b<2>: These bits determine the variable reset  
magnitude. Since there are 3 of these bits, 8 different levels  
are possible. b<0:2> = 000 corresponds to the highest variable  
reset value (Vdd for reset), and b<0:2> = 111 corresponds to  
the lowest value (ground). Fine tuning of the voltages that  
correspond to the variable reset heights can be done with  
other registers (described below).  
next transition of ROW. A conventional linear image capture  
(i.e., no dynamic range compression) is programmed by  
writing 00001000 ( 08) followed by 00000111 ( 07) to the  
x
x
®
program register. Autobrite compressed images are  
programmed by writing additional words to register 0 after  
00000111 ( 07). (See the examples at the end of this section  
x
for more details.)  
rs: This bit is used to start a new frame.  
Note: A new frame can also be started by applying a RESET  
signal. The difference between a register 0 frame start and a  
RESET frame start is that the register 0 frame start is  
synchronous. Use of the register 0 approach maintains a  
consistent integration interval from frame to frame.  
The system initiates a frame by writing a ‘1’ to bit 3 with the  
pixel reset value in bits 0-2. The 8-bit word is therefore:  
00001000 ( 08). When ROW (output) falls, the frame starts.  
x
Whenever a ‘1’ is written to bit 3, a ‘0’ must be written on the  
Document #: 001-11358 Rev. **  
Page 11 of 18  
CYIA2SC0300AA-BQE  
Register 1: This register (Table 5) controls noise cancellation circuitry for pixel-reset/row-select signals and enables hard reset  
operation.  
Table 5.Register 1 Description  
Bit  
0
Name  
Default  
Function  
When HIGH: Enables pixel reset signal noise reduction  
When HIGH: Enables row select signal noise reduction  
When HIGH: Enables hard reset operation  
Bit must be kept LOW  
enfreset  
enrdrop  
envdrop  
reserved  
1
1
1
0
1
2
3
ENFRESET and ENRDROP: Bits 0 and 1 enable noise  
reduction circuitry essential to effective operation of the  
imager. Both of these bits should be set equal to 1 at all times.  
A “soft” reset occurs when the reset transistor is operated in  
sub-threshold on pixel reset. Under these conditions the reset  
noise is ~  
.
kT2C  
ENVDROP: Bit 2 on register 1 controls how the pixels are  
reset. The voltage level to which a pixel settles after being  
reset (V ) can vary both spatially and temporally. Some of this  
Provided pixel reset noise is a considerable noise source, this  
discussion suggests that “soft” reset operation has signifi-  
cantly less noise than “hard” reset operation. In the IM103  
imager, the dark temporal noise is typically ~3LSB (12-bit) in  
“soft” reset mode and ~4.5LSB (12-bit) in “hard” reset mode  
(25 fps, T=33°C, full-frame integration).  
o
variability arises from pixel-to-pixel differences in transistor  
thresholds etc. which contributes to fixed pattern noise. There  
is also a random component to V originating ultimately from  
o
thermal noise. This noise component is commonly referred to  
as (kT/C) or reset noise.  
“Soft” reset mode has more image lag than “hard” reset mode.  
Lag occurs when the reset value of a pixel is dependent on its  
previous value. Because there is a limited settling time and the  
reset transistor is never driven above threshold, lag is more  
prevalent in “soft” reset mode. A trade-off between less noise  
or less image lag must therefore be made when deciding  
whether to use “soft” or “hard” reset mode.  
Reset noise depends on how the reset transistor is operated.  
A “hard” reset occurs when this transistor is driven above  
threshold on pixel reset. Under these conditions it can be  
shown that the thermal noise associated with pixel reset is  
proportional to  
where C is the sense node capacitance,  
k is Boltzmann’s constant, and T is the temperature in degrees  
kTC  
Kelvin.  
Register 2: This register (Table 6) enables various noise reduction and reset modes.  
Table 6.Register 2 Description  
Bit  
0
Name  
Default  
Function  
reserved  
reserved  
reserved  
enshort  
0
1
0
0
Bit must be kept LOW.  
Bit must be kept HIGH.  
Bit must be kept LOW.  
1
2
3
When HIGH: Enables circuitry to minimize column noise. sen (register 9, bit 1)  
should be set low when enshort is set high.  
ENSHORT: Enshort enables circuitry that minimizes column  
line noise.  
Register 3: This register (Table 7) enables various noise reduction and reset features.  
Table 7.Register 3 Description  
Bit  
0
Name  
enrdropdrop  
Default  
Function  
When HIGH: Enables hard reset noise reduction circuitry.  
When HIGH: Reduces CDS amplifier noise.  
Bit must be kept HIGH.  
1
1
0
0
1
encdsload  
reserved  
reserved  
2
3
Bit must be kept HIGH.  
ENRDROPDROP: This bit enables noise reduction circuitry  
used in hard reset mode. It should be set high whenever the  
imager is operated in hard reset mode, and low in soft reset  
mode.  
ENCDSLOAD This register reduces noise in the column circuit  
prior to the ADCs. Typically, 1dB of noise reduction will occur  
in low light illumination when this bit is set high.  
Document #: 001-11358 Rev. **  
Page 12 of 18  
CYIA2SC0300AA-BQE  
Register 4: This register (Table 8) controls the GPIO pin output and enables a feature that minimizes reverse saturation of the  
pixel signals.  
Table 8. Register 4 Description  
Bit  
0
Name  
Default  
Function  
a<0>  
0
0
0
1
Hard reset level bit OR analog test selection bit 0 (see text)  
Hard reset level bit OR analog test selection bit 1 (see text)  
Hard reset level bit OR analog test selection bit 2 (see text)  
When HIGH: Enables circuitry that minimizes “reverse” saturation effects.  
1
a<1>  
2
a<2>  
3
enclamp  
a<0>, a<1>, a<2>: These registers are used for two separate  
functions. When aten (register 5, bit 0) = 0 and envdrop = 1,  
a<0:2> select how far above threshold the reset transistor is  
driven during hard reset. For this function the recommended  
setting is a<0:2> = 000.  
When aten (register 5, bit 0) is high, a<0:2> selects analog  
voltages for test purposes.  
ENCLAMP: This register enables circuitry that prevents  
“reverse saturation” of pixel signals under high illumination.  
This register should be set high during normal imager  
operation.  
Register 5: This register (Table 9) controls the GPIO pin output and enables ADC test mode.  
Table 9.Register 5 Description  
Bit  
0
Name  
Default  
Function  
When HIGH: Enables analog voltage test output on GPIO pin.  
Bit must be kept LOW.  
aten  
0
0
0
0
1
reserved  
reserved  
vten  
2
Bit must be kept LOW.  
3
When HIGH: Enables voltageinput on GPIO pin for testingADC and CDS circuits.  
Also very useful in minimizing column fixed pattern noise.  
ATEN: This register enables the GPIO pin for analog output.  
mismatches between the ADCs can be corrected by operating  
the imager in this mode, saving the resulting column means,  
and subsequently correcting image data.  
VTEN: ADC test mode is enabled by setting vten = 1. In this  
mode a voltage signal can be sent to the CDS/ADC block  
through the GPIO pin. Column fixed pattern noise arising from  
Register 6: This register (Table 10) is currently not in use. Bits on this register should not be changed from their default settings.  
Table 10.Register 6 Description  
Bit  
0
Name  
Default  
Function  
reserved  
reserved  
reserved  
reserved  
0
0
1
0
Clamp Level Control  
Clamp Level Control  
Clamp Level Control  
Clamp Level Control  
1
2
3
Register 7: This register (Table 11) controls the data format (12 bit or 8 bit) and gain (for 8-bit format only).  
Table 11.Register 7 Description  
Bit  
0
Name  
Default  
Function  
g(0)  
0
0
0
0
Gain bit 0  
Gain bit 1  
Gain bit 2  
1
g(1)  
2
g(2)  
3
fmode  
When HIGH: Output is in 12-bit mode.  
When LOW: Output is in 8-bit mode and gain is enabled.  
FMODE: When fmode (bit 3) is HIGH, data is output from the  
sensor at 12 bits/pixel. When fmode is LOW, data is output at  
8 bits/pixel, and digital gain is enabled.  
where G is the 3-bit number determined from register 7, bits  
0-2. The maximum gain is 16X, or G = 100. Valid settings for  
G are 000, 001, 010, 011, and 100, for GAIN = 1, 2, 4, 8, and  
16X, respectively.  
g<0>, g<1>, and g<2>: Gain can be set from 1X to 16X in  
powers of 2. The gain is given by:  
G
GAIN = 2  
Document #: 001-11358 Rev. **  
Page 13 of 18  
CYIA2SC0300AA-BQE  
Register 8: This register (Table 12) controls the analog power on the sensor by setting the analog currents.  
Table 12.Register 8 Description  
Bit  
0
Name  
Default  
Function  
p(0)  
p(1)  
p(2)  
p(3)  
0
1
0
0
LSB of power setting.  
2nd bit of power setting.  
3rd bit of power setting.  
MSB of power setting.  
1
2
3
p<0>, p<1>, p<2>: The analog current is related to the register  
8 setting by the following (approximate) relation:  
( 8F). A minimum power setting of 4 (p<0:3> = 100) is recom-  
x
mended.  
Analog Current = 0.5 mA + (CurrSet)*1.25 mA  
NOTE: Although analog power dissipation is a major  
component of total power dissipation, other factors such as  
frame rate influence the total device power dissipation.  
where CurrSet is the 4-bit number programmed into register 8.  
The minimum analog current is approximately 0.5 mA, at ( 80).  
x
The maximum analog current is approximately 19.25 mA, at  
Register 9: This register (Table 13) controls the state of various internal analog current sources.  
Table 13.Register 9 Description  
Bit  
Name  
Default  
Function  
0
bgen  
sen  
1
When HIGH: Bandgap reference current source is enabled.  
When LOW, bandgap reference is disabled (imager will not function)  
1
2
3
1
1
1
When HIGH, column source-follower current source is enabled.  
When LOW, column source-follower current source is disabled.  
adcen  
cdsen  
When HIGH, analog/digital converter is enabled.  
When LOW, analog/digital converter is disabled (imager will not function).  
When HIGH, column amplifier is enabled.  
When LOW, column amplifier is disabled (imager will not function).  
BGEN, ADCEN, AND CDSEN: These bits enable various  
analog current source circuits that are essential to the  
operation of the imager. They should only be disabled to  
conserve power when the imager is in stand-by mode.  
SEN: Column line current sources are activated when sen =  
1. When enshort = 1, sen should be set LOW  
Register 10: This register (Table 14) is used for test purposes and control of variable reset voltage levels.  
Table 14.Register 10 Description  
Bit  
0
Name  
Default  
Function  
reserved  
reserved  
reserved  
b1sel  
1
0
0
0
reserved  
1
reserved  
2
reserved  
3
Shifts variable reset voltage levels  
B1SEL This bit changes the voltage level of variable reset  
levels 1-6. Enabling b1sel reduces the overall amount of  
compression in Autobrite mode.  
Register 11: This register (Table 15) controls dynamic range compression when digital gain is used.  
Table 15.Register 11 Description  
Bit  
0
Name  
Default  
Function  
LSB for manual gain compensation.  
nd  
squ<0>  
squ<1>  
squ<2>  
0
0
0
1
1
2
bit for manual gain compensation.  
2
MSB for manual gain compensation.  
3
autosquash  
When HIGH: Enables automatic gain compensation.  
When LOW: Enables manual gain compensation.  
squ<0>, squ<1>, squ<2>: These bits adjust the variable reset  
levels to compensate for any gain that is applied when  
operating in 8-bit mode (fmode=0). When the gain is 2X or  
greater, pixels will saturate an 8-bit scale at lower illumination  
levels than 1X gain mode. This in turn will progressively make  
the least compressive variable reset levels ineffective. To  
Document #: 001-11358 Rev. **  
Page 14 of 18  
CYIA2SC0300AA-BQE  
compensate for this effect, the variable reset levels can be  
shifted by enabling these bits. To perform this procedure  
manually, the autosquash bit must be set to 0.  
Table 16.Example Programming for Shutter Speed  
Equal to ½ Frame Rate  
Note: Setting squ<0:2> to values higher than 100 will produce  
variable reset levels equivalent to squ<0:2> = 100.  
Rowcount  
Databus  
0
08  
x
AUTOSQUASH: When this bit is set to 0 the variable reset  
levels can be adjusted manually with squ<2:0>. When it is set  
to 1 the variable reset levels are adjusted by the gain settings  
on register 7, g<0:2>.  
1
255  
07  
x
00  
x
256  
07  
x
8
Example: Programming the IM103 for  
Linear-mode Image Capture  
0 (next frame)  
08  
x
The following tables give additional examples of exposure  
control:  
The following example describes how to program the IM103 to  
capture images in the conventional linear mode. In this mode  
pixel output is linearly proportional to input illumination; no  
on-chip dynamic range compression is used.  
Table 17.Example Programming for Shutter Speed  
Equal to 511/512 Frame Rate  
There are 482 active rows in the sensor. Once a frame has  
started, at least 482 ROW signals must pass before a new  
frame is started. A convenient approach is to let the frame  
Rowcount  
Databus  
Note  
0
08  
x
9
contain 512 (2 ) ROW signals. Such a frame will contain 30  
1
07  
511/512 frametime  
x
blank rows. These 30 extra row times can be used as a vertical  
blanking period or as a time to calculate the next exposure and  
process data.  
0 (next frame)  
08  
x
Table 18.Example Programming for Shutter Speed  
Equal to 384/512 Frame Rate  
When capturing an image, the controller should keep track of  
the row count. At row count 0, the start of frame instruction is  
written to the sensor. This is done by writing 08 over the data  
x
Rowcount  
Databus  
Note  
bus. At row count 1, the controller must write a new value to  
address 0 to turn off the frame start signal. This can be done  
0
08  
x
by writing 07 or another value depending on the exposure  
x
x
time. When ready to integrate, the controller writes 00 to the  
1
128  
07  
x
x
00  
384/512 frametime  
sensor followed by 07.  
x
x
129  
07  
The integration (or exposure) time is determined by the  
number of row periods remaining in the frame after the  
integration signal is written (see Figure 16):  
x
0 (next frame)  
08  
x
Table 19.Example Programming for Shutter Speed  
Equal to 1/512 Frame Rate  
T
= ((Rows - IntStart)/Rows) * 1/FrameRate  
int  
where:  
Rowcount  
Databus  
Note  
Rows = total rows in frame (including virtual rows).  
0
08  
IntStart = the number of rows that pass before writing the  
integration word to the sensor.  
x
1
510  
07  
x
FrameRate = sclk/(Rows)/48.  
00  
1/512 frametime  
x
To set exposure, the system controller determines the  
appropriate exposure time and tells the imager to start  
integrating at IntStart.  
511  
07  
x
0 (next frame)  
08  
x
For example, if a shutter speed equal to half of the frame rate  
is desired, the following sequence of words would be written  
to the sensor:  
When exposure is set to full integration and more brightness  
is required, gain may be used in 8-bit mode (by setting register  
7). The system controller would then need to control both gain  
and integration.  
Document #: 001-11358 Rev. **  
Page 15 of 18  
CYIA2SC0300AA-BQE  
Figure 16. Timing of Program Register Instructions for Linear-response Mode  
The sensor is initially programmed to 08 at RowCount = 0 (setting start of frame). At RowCount = 1 (next ROW pulse), 07 is  
written to the sensor. At RowCount = n (equivalent to IntStart in the text) integration is initiated by writing 00 followed by 07 at  
x
x
x
x
RowCount = n+1. The sequence repeats at the start of the next frame.  
9
Schematic of the Package  
The schematic of the package of the imager is as shown  
below.  
60 Lead, CustomCBGA  
Section AA  
Top View  
A
1.525 0.19  
0.5 0.05  
1 0.18  
0.5  
12.5 0.3  
"T"  
9.5  
10  
1
0.025  
A
(6.718, 6.3179)  
SMaLCamera  
IM103-A(~F)  
Die  
Center  
Package  
and  
Optical  
Center  
0.066  
Offset in mm  
SMaLCamera  
(0, 0)  
JWY  
J
Ø
8.26 0.15  
9.66 0.15  
0
.
5
1
0.5  
layer 4  
0
.
1
layer 3  
layers 1 &2  
A
0
Target tolerance  
on pad dia =0.05mm  
Glass Lid  
Dimensions: mm  
"D"  
Package  
Die  
Document #: 001-11358 Rev. **  
Page 16 of 18  
CYIA2SC0300AA-BQE  
2. Protects the wire bonds  
10 Optical Window  
c. Option is provide die in wafer form  
Question: What is the thickness (T) of the optical  
window?  
Question: What are the recommendations to handle the  
image without the optical window  
Answer: The optical window thickness (T) is 0.5mm  
thick.  
Answer: Standard practise for packaging image sensors  
is to singulate the wafer and immediately package the sensors  
into a package or camera module within a class 100 or better  
clean room. Extreme care and appropriate processing is  
required to “seal” the optical path within 0.5mm of the image  
plane so that particle does not create dark defects in the  
image.  
Question: What is the distance (D) between the upper  
surface of the die and lower (internal) surface of the optical  
window?  
Answer: The distance (D) between the upper surface of  
the die and the lower (internal) surface of the optical window  
is 0.26 mm and this includes a 0.03 mm bond line.  
Question: Could the imager qualification be compro-  
mised from the optical removal window?  
Question: Depending on the former dimensions (if  
T+D>0.4_0.5 mm): would it be possible to have the imager  
without the optical window in our development phase (and in  
more general during the production phase)?  
Answer: a. Yes, Silicon sensor reliability in the field  
depends on how it is packaged. Cypress has not qualified an  
open package for the reasons stated above. The options are:  
Answer: a) Total distance between the image plane (top  
of sensor) and the top of the glass is 0.76 mm.  
i. Buy the sensor in a qualified package.  
ii. Buy sensor in die from (generally wafer) in  
which case the customer receives qualified silicon but  
customer must manage the reliability of the sensor in their  
package or system  
b) No.  
i) The window provides two critical functions  
1. Protects the optical path from particles that  
will be imaged  
Autobrite is a registered trademark of Cypress Semiconductor Corporation. All products and company names mentioned  
in this document may be the trademarks of their respective holders.  
Document #: 001-11358 Rev. **  
Page 17 of 18  
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be  
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its  
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
CYIA2SC0300AA-BQE  
Document History Page  
Document Title: 1/3” VGA-Format CMOS Image Sensor  
Document Number: 001-11358  
REV.  
ECN NO.  
Issue Date  
Orig. of Change  
Description of Change  
**  
503768  
See ECN  
QGS  
New Datasheet  
Document #: 001-11358 Rev. **  
Page 18 of 18  
厂商 型号 描述 页数 下载

CYPRESS

CYI9530ZXC PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 11 页

CYPRESS

CYI9530ZXCT PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 11 页

CYPRESS

CYI9531OXC PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 10 页

CYPRESS

CYI9531OXCT PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 10 页

CYPRESS

CYI9531ZXC PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 10 页

CYPRESS

CYI9531ZXCT PCIX I / O系统时钟发生器,带有EMI控制功能[ PCIX I/O System Clock Generator with EMI Control Features ] 10 页

CYPRESS

CYIFS741BSXBT [ Clock Generator, 68MHz, CMOS, PDSO8, SOIC-8 ] 19 页

CYPRESS

CYIFS781BSXC 低EMI的扩频时钟[ Low EMI Spectrum Spread Clock ] 12 页

CYPRESS

CYIFS781BSXCT 低EMI的扩频时钟[ Low EMI Spectrum Spread Clock ] 12 页

CYPRESS

CYIFS781BZXC 低EMI的扩频时钟[ Low EMI Spectrum Spread Clock ] 12 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.265062s