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IXTT88N30P

型号：

IXTT88N30P

描述：

PolarHT功率MOSFET[ PolarHT Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

583 K

下载PDF手册
IXTH 88N30P  
IXTT 88N30P  
VDSS = 300 V  
ID25 = 88 A  
= 40 mΩ  
PolarHTTM  
Power MOSFET  
RDS(on)  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-247(IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
300  
300  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSM  
20  
V
D (TAB)  
ID25  
TC = 25°C  
88  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
TO-268 (IXTT)  
220  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
mJ  
J
G
S
2.0  
D (TAB)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
z
z
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Low package inductance  
- easy to drive and to protect  
Weight  
TO-247  
TO-264  
TO-268  
6
10  
5
g
g
g
Advantages  
z
Easy to mount  
Symbol  
TestConditions  
Characteristic Values  
z
Space savings  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
TJ = 125°C  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
40 mΩ  
DS99129A(01/04)  
© 2004 IXYS All rights reserved  
IXTH 88N30P  
IXTT 88N30P  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
50  
S
Ciss  
Coss  
Crss  
6300  
950  
pF  
pF  
pF  
1
2
3
190  
td(on)  
tr  
td(off)  
tf  
25  
24  
96  
25  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 3.3 Ω (External)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
180  
44  
nC  
nC  
nC  
A
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A12  
Qgd  
90  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
b
b12  
RthJC  
RthCK  
0.21 K/W  
(TO-247)  
(TO-264)  
0.21  
0.15  
K/W  
K/W  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Source-Drain Diode  
Characteristic Values  
∅P 3.55  
3.65  
.140 .144  
(TJ = 25°C, unless otherwise specified)  
Q
5.89  
4.32  
6.40 0.232 0.252  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
R
S
5.49  
.170 .216  
242 BSC  
6.15 BSC  
VGS = 0 V  
88  
A
A
V
TO-268 Outline  
ISM  
Repetitive  
220  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
250  
3.3  
ns  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTH 88N30P  
IXTT 88N30P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
@ 25 C  
º
ºC  
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
V
GS  
= 10V  
9V  
9V  
8V  
8V  
7V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
ID = 88A  
ID = 44A  
0.8  
0.6  
0.4  
5V  
6
0
1
2
3
4
5
7
8
9
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.2  
3
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
0
20 40 60 80 100 120 140 160 180 200  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTH 88N30P  
IXTT 88N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
TJ = -40ºC  
25ºC  
125ºC  
60  
TJ = 125ºC  
25ºC  
40  
-40ºC  
20  
0
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
20  
40  
60  
80 100 120 140 160 180  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
280  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 150V  
D = 44A  
IG = 10mA  
I
TJ = 125ºC  
TJ = 25ºC  
40  
0
0
20  
40  
60  
80 100 120 140 160 180  
0.6  
0.8  
1
1.2  
1.4  
1.6  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
TJ = 150ºC  
C = 25ºC  
RDS(on) Limit  
T
C
iss  
25µs  
100µs  
C
C
oss  
rss  
1ms  
10ms  
DC  
f = 1MHz  
1
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH 88N30P  
IXTT 88N30P  
Fig. 13. M axim um Trans ie nt The rm al Re s is tance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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