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IXTQ23N60Q

型号：

IXTQ23N60Q

描述：

功率MOSFET Q系列[ Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

534 K

下载PDF手册
IXTQ 23N60Q  
VDSS  
ID25  
= 600 V  
23 A  
Power MOSFETs  
Q-Class  
=
RDS(on) = 0.32 Ω  
N-ChannelEnhancementMode  
Avalanche Rated, High dv/dt,  
Low Gate Charge and Capacitances  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
T
= 25°C to 150°C  
600  
600  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
23  
92  
23  
A
A
A
G
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
D
(TAB)  
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
1.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
5
V/ns  
Features  
PD  
TC = 25°C  
400  
W
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
IXYS advanced low gate charge  
process  
International standard package  
Low gate charge and capacitance  
- easier to drive  
- faster switching  
Low RDS (on)  
Unclamped Inductive Switching (UIS)  
rated  
Molding epoxies meet UL 94 V-0  
flammability classification  
z
z
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
z
z
Weight  
6
g
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
z
2.5  
4.5  
Easy to mount  
Space savings  
z
100 nA  
z
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
1
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
0.32  
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
© 2003 IXYS All rights reserved  
DS99080(08/03)  
IXTQ 23N60Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-3P Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
10  
20  
S
Ciss  
Coss  
Crss  
3300  
410  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
20  
20  
45  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1.5 Ω (External)  
Qg(on)  
Qgs  
90  
20  
45  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCK  
0.31  
K/W  
K/W  
0.25  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
23  
92  
A
ISM  
Repetitive; pulse width limited by TJM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
500  
ns  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTQ 23N60Q  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
VGS = 10V  
6V  
7V  
6V  
5V  
5V  
0
0
0
0
2
4
6
8
10  
25  
50  
0
5
10  
15  
20  
25  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
ID = 23A  
ID = 11.5A  
0.7  
0.4  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
25  
20  
15  
10  
5
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.7  
0
10  
20  
30  
40  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXTQ 23N60Q  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
10  
20  
30  
40  
50  
60  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
VDS = 300V  
ID = 11.5A  
IG = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0
20  
40  
60  
80  
100  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1
f = 1MHz  
C
iss  
0.1  
C
C
oss  
rss  
0.01  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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