IXTP 10N60PM
Symbol
gfs
Test Conditions
Characteristic Values
ISOLATED TO-220 (IXTP...M)
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 5 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6
11
S
Ciss
Coss
Crss
1610
165
14
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
20
24
55
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 10 Ω (External)
Qg(on)
Qgs
32
11
10
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 5 A
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
RthJS
2.5 °C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
10
A
A
V
ISM
30
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IF = 9 A, -di/dt = 100 A/μs
500
ns
VR = 100V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
