Advanced Technical Information
PolarHTTM
Power MOSFET
VDSS = 100 V
ID25 = 200 A
RDS(on) = 7.5mΩ
IXTK 200N10P
N-Channel Enhancement Mode
TO-264(SP) (IXTK)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 175°C
100
100
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
20
V
ID25
TC = 25°C
200
75
A
A
A
(TAB)
G
D
S
ID(RMS)
IDM
External lead current limit
TC = 25°C, pulse width limited by TJM
400
IAR
TC = 25°C
60
A
G = Gate
S = Source
D = Drain
TAB = Drain
EAR
EAS
TC = 25°C
TC = 25°C
100
4
mJ
J
Features
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
z
z
TC = 25°C
800
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
Low package inductance
- easy to drive and to protect
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
Advantages
Md
1.13/10 Nm/lb.in.
g
z
Easy to mount
Space savings
Weight
10
z
z
High power density
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 500µA
VGS = 20 VDC, VDS = 0
100
2.5
V
V
5.0
200 nA
IDSS
VDS = VDSS
VGS = 0 V
25 µA
250 µA
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
7.5 mΩ
mΩ
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
5.5
DS99186(05/04)
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