WT7822AM
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250µA
V
(BR)DSS
-
1.2
-
-
V
V
25
V
D
GS
Gate-Source Threshold Voltage
=V , I =250µA
V
0.7
2.0
GS (th)
V
D
DS GS
Gate-Source Leakage Current
+
-
I
-
-
GSS
100
nA
uA
+
=0V,V = 16V
-
GS
V
DS
Zero Gate Voltage Drain Current
=20V,V =0V
I
-
DSS
1
V
DS
GS
Drain-Source On-Resistance
rDS (on)
-
-
6
8
7
9
V
GS
V
GS
=10V, I =14A
mΩ
D
=4.5V, I =10A
D
On-State Drain Current
=10V,V =10V
I
D(on)
-
-
-
10
-
A
S
V
DS
GS
Forward Transconductance
g
fs
28
V
=10V, I =14A
DS
D
(3)
Dynamic
Input Capacitance
C
-
iss
-
-
3640
550
V
=16V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=16V,V =0V, f=1MHZ
C
-
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
C
rss
-
420
-
V
=16V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
12.3
10.2
V
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Rise Time
V
t
r
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Turn-Off Time
V
t
nS
nS
23.8
12.1
d(off)
-
-
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Fall Time
V
t
f
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Total Gate Charge
VGS=10V,VDS=16V,ID=14A
VGS=5V,VDS=16V,ID=14A
-
-
73.9
36.2
-
nc
Qg
-
Gate-Source Charge
Qgs
-
11.2
9.9
nc
nc
-
-
V
=5V, V =16V, I =14A
GS
DS D
Gate-Drain Charge
=5V, V =16V, I =14A
Qgd
-
V
GS
DS
D
Diode Forward Voltage
=0V, I =14A
Drain-Source
-
0.84
1.2
VSD
V
V
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
4. Guaranteed when external Rg=6Ω and tf < tf max.
WEITRON
http://www.weitron.com.tw
2/6
02-Aug-05