WT-3402
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250 uA
V
(BR)DSS
-
1.5
-
-
V
V
30
1
V
D
GS
Gate-Source Threshold Voltage
=V , I =250 uA
V
GS (th)
2.5
V
D
DS GS
Gate-Source Leakage Current
I
+
-
-
GSS
100
nA
uA
+
=0V,V = 20V
-
GS
V
DS
Zero Gate Voltage Drain Current
=24V,V =0V
I
-
-
DSS
1
V
DS
GS
rDS (on)
Drain-Source On-Resistance
mΩ
-
-
V
=10V, I =4.6A
30
42
26
38
GS
GS
D
V
=4.5V, I =4.0A
D
On-State Drain Current
=5V,V =4.5A
I
D(on)
-
-
-
10
-
A
S
V
DS
GS
Forward Transconductance
g
fs
5
V
=5V, I =4.6A
DS
D
(3)
Dynamic
Input Capacitance
C
-
-
-
iss
-
-
782
135
93
V
=15V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=15V,V =0V, f=1MHZ
C
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
C
rss
-
V
=15V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
4.8
3.9
Ω
= 10V,V =15V, I =1A, R =15 ,R =6Ω
L
DD D
V
GS
GEN
Rise Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
r
Ω
V
GS
GEN
L
DD
D
Turn-Off Delay Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
nS
nS
27.7
5.5
d(off)
-
-
Ω
V
GS
GEN
L
DD
D
Fall Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
f
Ω
V
GS
GEN
L
DD
D
Total Gate Charge
=15V, I =4.6A,V =10V
-
-
-
-
nc
nc
nc
Qg
15.8
2
V
GS
DS
D
Gate-Source Charge
=15V, I =4.6A,V =10V
Qgs
-
-
V
GS
DS
D
Gate-Drain Charge
=15V, I =4.6A,V =10V
3
Qgd
V
GS
DS
D
Diode Forward Voltage
Drain-Source
-
0.78
1.2
VSD
V
V
=0V, I =1.25A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw