PZTA14
Darlington NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
4
1. BASE
P b
Lead(Pb)-Free
2.COLLECTOR
1
3.EMITTER
4.COLLECTOR
BASE
1
2
3
SOT-223
3
EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
30
Unit
V
V
CEO
CBO
V
V
30
V
Emitter-Base Voltage
Collector Current (DC)
10
V
EBO
I
300
mA
W
C(DC)
2
P
Total Device Disspation T =25˚C
A
D
T
j
150
Junction Temperature
Storage,Temperature
C
C
-55 to +150
Tstg
Device Marking
PZTA14=A14
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = 1mA , I =0)
V
V
V
30
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
-
30
V
V
Collector-Base Breakdown Voltage (I =100µA , I =0)
C
E
-
Emitter-Base Breakdown Voltage (I = 10 µA , I =0)
10
-
E
C
I
nA
nA
100
100
CBO
Collector-Base Cutoff Current (V = 30V)
CB
-
I
Emitter-Base Cutoff Current (V = 10Vdc , I =0)
EB
EBO
C
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
2
collector lead min. 0.93 inches.
WEITRON
http://www.weitron.com.tw
1/4
22-Sep-05
