UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a Darlington transistor.
3
2
1
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Power Dissipation: Pc (max) = 1000 mW
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCES
VEBO
Pc
VALUE
30
30
10
1000
500
UNIT
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
V
mW
mA
°C
Ic
Tj
TSTG
150
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCES
ICBO
TEST CONDITIONS
Ic=100µA,IB=0
MIN MAX UNIT
30
20000
125
V
VCB=30V,IE=0
VEB=10V,Ic=0
100
100
nA
nA
Emitter Cut-Off Current
IEBO
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
hFE
VCE=5V,Ic=100mA
Ic=100mA,IB=0.1mA
VCE=5V,Ic=100mA
VCE=5V,Ic=10mA,
f=100MHz
VCE(sat)
VBE(on)
fT
1.5
2.0
V
V
MHz
Current Gain Bandwidth Product
Pulse test: Pulse Width<300µs, Duty Cycle=2%
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R207-004,B
