IXTA 8N50P
IXTP 8N50P
Symbol
gfs
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
5
8
S
Ciss
Coss
Crss
1050
120
12
pF
pF
pF
td(on)
tr
td(off)
tf
22
28
65
23
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 18 Ω (External)
Qg(on)
Qgs
20
7
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
7
RthJC
RthCS
0.83° C/W
° C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VGS = 0 V
Repetitive
8
A
A
V
ISM
14
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 8 A, VGS=0V, VR=100V
400
ns
-di/dt = 100 A/µs
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
