WV3EG264M64EFSU-D4
White Electronic Designs
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, VOUT
VCC
VCCQ
TSTG
TA
Value
-0.5 to 3.3
-1.0 to 3.6
-1.0 to 3.6
-55 to +150
0 to +70
16
Units
V
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Voltage on VCCQ supply relative to VSS
Storage Temperature
V
V
°C
°C
W
Operating Temperature
Power Dissipation
Short Circuit Current
PD
IOS
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC CHARACTERISTICS
0°C ≤ TA ≤ 70°C, VCC = 2.5V 0.2V
Parameter
Symbol
VCC
Min
2.3
Max
2.7
Unit
Note
Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
I/O Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
I/O Reference voltage
VCCQ
2.3
2.7
V
V
VREF
VTT
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC)
VIX(DC)
0.49*VCCQ
VREF-0.04
VREF+0.15
-0.3
0.51*VCCQ
VREF+0.04
VCCQ+0.30
VREF-0.15
VCCQ+0.30
VCCQ+0.60
VCCQ+0.60
32
1
2
I/O Termination voltage
V
Input logic high voltage
V
Input logic low voltage
V
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
-0.3
V
0.3
V
3
0.3
V
Addr, CAS#,
RAS#, WE#
CS#, CKE
CK, CK#
DM
-32
uA
-16
-16
-4
16
16
4
10
—
—
—
—
uA
uA
uA
uA
mA
mA
mA
mA
Input leakage current
II
Output leakage current
IOZ
IOH
IOL
IOH
IOL
-10
-16.8
16.8
-9
Output high current (normal strengh); VOUT = V +0.84V
Output high current (normal strengh); VOUT = VTT -0.84V
Output high current (half strengh); VOUT = VTT +0.45V
Output high current (half strengh); VOUT = VTT -0.45V
9
NOTES:
1.
V
REF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed 2ꢀ of the DC
value
2.
V
TT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK#.
CAPACITANCE
VCC = 2.5V, VCCQ = 2.5V, TA = 25°C, f = 1MHz
Parameter
Symbol
CIN1
Min
28
16
16
16
11
Max
44
Unit
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A12, BA0-BA1, RAS#, CAS#, WE#)
Input Capacitance (CKE0, CKE1)
CIN2
24
Input Capacitance (CS0#, CS1#)
CIN3
24
Input Capacitance (CK0,CK0#, CK1, CK1#)
Input Capacitance (DM0-DM7)
CIN4
24
CIN5
13
Data and DQS input/output capacitance (DQ0-DQ63)
COUT
11
13
August 2005
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
