WV3HG128M72EEU-PD4
White Electronic Designs
ADVANCED
DDR2 ICC SPECIFICATIONS AND CONDITIONS
Includes DDR2 SDRAM components only
VCC = +1.8V 0.1V
Symbol Proposed Conditions
ICC0* Operating one bank active-precharge current;
806
665
534
403
Units
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,110 1,065 1,020
mA
TBD
ICC1*
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD
= tRCD(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as ICC4W
1,200 1,115 1,1110
mA
TBD
ICC2P* Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data
bus inputs are FLOATING
408
660
705
408
615
660
408
615
660
mA
mA
mA
TBD
TBD
TBD
ICC2Q** Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
STABLE; Data bus inputs are FLOATING
ICC2N** Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
ICC3P** Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
570
408
525
408
525
408
mA
mA
TBD
TBD
Slow PDN Exit MRS(12) = 1
ICC3N** Active standby current;
All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
750
705
705
mA
mA
mA
mA
mA
mA
TBD
TBD
TBD
TBD
TBD
TBD
ICC4W* Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS
=
1,645 1,470 1,362
1,645 1,470 1,335
2,280 2,235 2,190
tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
ICC4R* Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS
= tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data pattern is same as ICC4W
ICC5B** Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
ICC6**
Self refresh current;
CK and CK\ at 0V; CKE 0.2V; Other control and address bus
inputs
are FLOATING; Data bus inputs are FLOATING
Normal
90
90
90
ICC7*
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK
=
3,000 2,820 2,640
tCK(ICC), tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are SWITCHING.
ICC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.
Note:
* Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode.
** Value calculated reflects all module ranks in this operating condition.
May 2006
Rev. 0
6
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