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WV3HG64M64EEU534D6MG

型号：

WV3HG64M64EEU534D6MG

描述：

512MB - 64Mx64 DDR2 SDRAM UNBUFFERED[ 512MB - 64Mx64 DDR2 SDRAM UNBUFFERED ]

品牌：

WEDC[ WHITE ELECTRONIC DESIGNS CORPORATION ]

页数：

11 页

PDF大小：

185 K

下载PDF手册
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED*  
512MB – 64Mx64 DDR2 SDRAM UNBUFFERED  
FEATURES  
DESCRIPTION  
ꢀ
240-pin, dual in-line memory module  
The WV3HG64M64EEU is a 64Mx64 Double Data  
Rate DDR2 SDRAM high density module. This memory  
module consists of eight 64Mx8 bit with 4 banks DDR2  
Synchronous DRAMs in FBGA packages, mounted on a  
240-pin DIMM FR4 substrate.  
ꢀ
Fast data transfer rates: PC2-6400*, PC2-5300*,  
PC2-4200 and PC2-3200  
ꢀ
Utilizes 800*, 667*, 533 and 400 MT/s DDR2  
SDRAM components  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
VCC = VCCQ = 1.8V 0.1V  
* This product is under development, is not qualified or characterized and is subject to  
change or cancellation without notice.  
JEDEC standard 1.8V I/O (SSTL_18-compatible)  
Differential data strobe (DQS, DQS#) option  
Four-bit prefetch architecture  
Programmable CAS# latency (CL): 3, 4, 5 and 6  
On-die termination (ODT)  
NOTE: Consult factory for availability of:  
• Vendor source control options  
• Industrial temperature option  
Serial Presence Detect (SPD) with EEPROM  
Gold edge contacts  
Single Rank  
RoHS compliant  
Package option  
• 240 Pin DIMM  
• PCB – 30.00mm (1.181") TYP  
OPERATING FREQUENCIES  
PC2-3200  
200MHz  
3-3-3  
PC2-4200  
266MHz  
4-4-4  
PC2-5300*  
333MHz  
5-5-5  
PC2-6400*  
400MHz  
6-6-6  
Clock Speed  
CL-tRCD-tRP  
* Consult factory for availability  
December 2005  
Rev. 0  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
PIN CONFIGURATION  
PIN NAMES  
Function  
Pin No.  
1
2
3
4
5
6
7
8
Symbol  
VREF  
VSS  
DQ0  
DQ1  
VSS  
DQS0#  
DQS0  
VSS  
DQ2  
DQ3  
VSS  
DQ8  
DQ9  
VSS  
DQS1#  
DQS1  
VSS  
Pin No.  
61  
Symbol  
A4  
Pin No.  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
Symbol  
VSS  
Pin No.  
181  
182  
183  
184  
185  
186  
187  
188  
189  
190  
191  
192  
193  
194  
195  
196  
197  
198  
199  
200  
201  
202  
203  
204  
205  
206  
207  
208  
209  
210  
211  
212  
213  
214  
215  
216  
217  
218  
219  
220  
221  
222  
223  
224  
225  
226  
227  
228  
229  
230  
231  
232  
233  
234  
235  
236  
237  
238  
239  
240  
Symbol  
VCCQ  
A3  
A1  
VCC  
CK0  
CK0#  
VCC  
A0  
VCC  
BA1  
VCCQ  
RAS#  
CS0#  
VCCQ  
ODT0  
A13  
Pin Name  
A0-A13  
BA0, BA1  
DQ0 ~ DQ63  
DQS0 ~ DQS7  
DQS0# ~ DQS7#  
ODT0  
Address Input  
Bank Address  
Data Input/output  
Data Strobe  
Data Strobe negative  
On Die Termination  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
VCCQ  
A2  
VCC  
VSS  
VSS  
VCC  
NC  
VCC  
A10/AP  
BA0  
VCCQ  
WE#  
CAS#  
VCCQ  
NC  
NC  
VCCQ  
VSS  
DQ32  
DQ33  
VSS  
DQS4#  
DQS4  
VSS  
DQ34  
DQ35  
VSS  
DQ40  
DQ41  
VSS  
DQ4  
DQ5  
VSS  
DM0  
NC  
VSS  
DQ6  
DQ7  
VSS  
DQ12  
DQ13  
VSS  
DM1  
NC  
VSS  
CK1  
CK1#  
VSS  
DQ14  
DQ15  
VSS  
DQ20  
DQ21  
VSS  
DM2  
NC  
9
CK0,CK0# - CK2, Clock Input  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
CK2#  
CKE0  
CS0#  
RAS#  
CAS#  
WE#  
VCC  
VCCQ  
VSS  
SA0 ~ SA2  
SDA  
Clock enable input  
Chip Select Input  
Row Address Strobe  
Column Address Strobe  
Write Enable  
Voltage Supply (1.8V 0.1Vꢀ  
I/O Power (1.8Vꢀ  
Ground  
SPD Address  
Serial Data I/O  
Serial clock  
Data Masks  
VCC  
VSS  
NC  
NC  
VSS  
DQ36  
DQ37  
VSS  
DM4  
NC  
DQ10  
DQ11  
VSS  
DQ16  
DQ17  
VSS  
DQS2#  
DQS2  
VSS  
DQ18  
DQ19  
VSS  
DQ24  
DQ25  
VSS  
DQS3#  
DQS3  
VSS  
DQ26  
DQ27  
VSS  
NC  
NC  
VSS  
NC  
DQS8  
VSS  
NC  
NC  
VSS  
VSS  
DQ38  
DQ39  
VSS  
DQ44  
DQ45  
VSS  
DM5  
NC  
VSS  
DQ46  
DQ47  
VSS  
DQ52  
DQ53  
VSS  
CK2  
CK2#  
VSS  
DM6  
NC  
SCL  
DM(0-7ꢀ  
A10/AP  
VREF  
VCCSPD  
NC  
VSS  
Address input/Auto precharge  
I/O reference supply  
Serial EEPROM  
No Connect  
DQ22  
DQ23  
VSS  
DQ28  
DQ29  
VSS  
DM3  
NC  
VSS  
DQ30  
DQ31  
VSS  
NC  
NC  
VSS  
NC  
NC  
VSS  
NC  
NC  
VSS  
VCCQ  
NC  
DQS5#  
DQS5  
VSS  
DQ42  
DQ43  
VSS  
DQ48  
DQ49  
VSS  
94  
95  
96  
97  
98  
99  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
SA2  
NC  
VSS  
DQS6#  
DQS6  
VSS  
DQ50  
DQ51  
VSS  
DQ56  
DQ57  
VSS  
DQS7#  
DQS7  
VSS  
DQ58  
DQ59  
VSS  
SDA  
SCL  
VSS  
DQ54  
DQ55  
VSS  
DQ60  
DQ61  
VSS  
DM7  
NC  
VSS  
DQ62  
DQ63  
VSS  
VCCSPD  
SA0  
SA1  
VCCQ  
CKE0  
VCC  
NC  
NC  
VCCQ  
A11  
A7  
VCC  
A5  
VCC  
NC  
NC  
VCCQ  
A12  
A9  
VCC  
A8  
A6  
December 2005  
Rev. 0  
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
FUNCTIONAL BLOCK DIAGRAM  
CS0  
DQS0#  
DQS0  
DM0  
DQS4#  
DQS4  
DM4  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DM  
CS# DQS DQS#  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQS1#  
DQS1  
DM1  
DQS5#  
DQS5  
DM5  
DM  
CS# DQS DQS#  
CS# DQS DQS#  
CS# DQS DQS#  
DM  
DQ8  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQS2#  
DQS2  
DM2  
DQS6#  
DQS6  
DM6  
DM  
DM  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQS3#  
DQS3  
DM3  
DQS7#  
DQS7  
DM7  
DM  
DM  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
DQ  
BA0-BA1  
BA0-BA1: DDR2 SDRAMs  
A0-A13: DDR2 SDRAMs  
RAS#: DDR2 SDRAMs  
CAS#: DDR2 SDRAMs  
WE#: DDR2 SDRAMs  
CKE0: DDR2 SDRAMs  
ODT0: DDR2 SDRAMs  
Serial PD  
A0-A13  
RAS#  
CAS#  
WE#  
SCL  
SDA  
WP A0 A1 A2  
SA0 SA1 SA2  
CKE0  
ODT0  
*Clock Wiring  
Clock  
Input  
DDR2 SDRAMs  
VCCSPD  
*CK0\CK0  
*CK1\CK1  
*CK2\CK2  
2 DDR2 SDRAMs  
3 DDR2 SDRAMs  
3 DDR2 SDRAMs  
Serial PD  
VCC/VCCQ  
DDR2 SDRAMs  
DDR2 SDRAMs  
DDR2 SDRAMs  
*Wire per Clock Loading  
Table/Wiring Diagrams  
VREF  
VSS  
Notes:  
1. DQ, DM, DQS/DQS# resistors:5.1 Ohms +/-5%  
2. BAx, Ax, RAS#, CAS#, WE# resistors: 5.1 Ohms +/-5%  
NOTE: All resistor values are 22 ohms unless otherwise specified.  
December 2005  
Rev. 0  
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
DC OPERATING CONDITIONS  
All Voltages Referenced to VSS  
Rating  
Parameter  
Symbol  
VCC  
Min.  
1.7  
Type  
1.8  
Max.  
1.9  
Units  
Notes  
Supply Voltage  
V
V
V
V
V
1
4
4
2
3
I/O Supply Voltage  
VCCL Supply Voltage  
I/O Reference Voltage  
I/O Termination Voltage  
Notes:  
VCCQ  
VCCL  
VREF  
VTT  
1.7  
1.8  
1.9  
1.7  
1.8  
1.9  
0.49*VCCQ  
VREF-0.04  
0.50*VCCQ  
VREF  
0.51*VCCQ  
VREF+0.04  
1.  
2.  
V
CC and VCCQ must track each other. VCCQ must be less than or equal to VCC  
.
V
REF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/- percent of the DC  
value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.  
3.  
4.  
V
TT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF  
.
V
CCQ tracks with VCC; VCCL track with VCC  
.
ABSOLUTE MAXIMUM RATINGS  
SSTL_1.8V  
Symbol  
VCC  
Parameter  
Min  
- 1.0  
- 0.5  
- 0.5  
- 0.5  
-55  
Max  
2.3  
2.3  
2.3  
2.3  
100  
85  
Unit  
V
Voltage on VCC pin relative to VSS  
Voltage on VCCQ pin relative to VSS  
Voltage on VCCL pin relative to VSS  
Voltage on any pin relative to VSS  
Storage Temperature  
VCCQ  
VCCL  
V
V
VIN, VOUT  
TSTG  
V
°C  
°C  
uA  
TCASE  
IL  
Device operating Temperature  
0
Input leakage current; Any input 0V<VIN<VCC  
VREF input 0V<VIN<<0.95; Other pins not  
under test = 0V  
;
Command/Address, RAS#,  
CAS#, WE#  
-40  
40  
CS#, CKE  
CK, CK#  
-40  
-15  
-5  
40  
15  
5
uA  
uA  
uA  
uA  
DM  
IOZ  
Output leakage current; 0V<VOUT<VCCQ; DQs  
and ODT are disable  
DQ, DQS, DQS#  
-5  
5
IVREF  
VREF leakage current; VREF = Valid VREF level  
-16  
16  
uA  
December 2005  
Rev. 0  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
CAPACITANCE  
TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V  
Parameter  
Symbol  
Min  
12  
12  
12  
7
Max  
20  
20  
20  
10  
8
Units  
pF  
Input Capacitance: (A0 ~ A13, BA0 ~ BA1, RAS#, CAS#, WE#ꢀ  
Input Capacitance: (CKE0ꢀ, (ODT0ꢀ  
CIN1  
CIN2  
pF  
Input Capacitance: (CS0#ꢀ  
CIN3  
pF  
Input Capacitance: (CK0, CK0# ~ CK2, CK2#ꢀ  
Input Capacitance: (DM0 ~ DM7ꢀ  
CIN4  
pF  
CIN6  
6.5  
6.5  
pF  
Input Capacitance: (DQ0 ~ DQ63ꢀ  
COUT1  
8
pF  
OPERATING TEMPERATURE CONDITION  
Parameter  
Symbol  
Rating  
Units  
Notes  
Operating Temperature  
TOPER  
0ºC to 85ºC  
ºC  
1, 2  
Notes:  
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDEC JESD51.2.  
2. At 0 - 85ºC, operation temperature range, all DRAM specification will be supported.  
INPUT DC LOGIC LEVEL  
All voltages referenced to VSS  
Parameter  
Symbol  
VIH(DCꢀ  
VIL(DCꢀ  
Min  
VREF + 0.125  
-0.300  
Max  
Units  
Input High (Logic 1ꢀ Voltage  
Input Low (Logic 0ꢀ Voltage  
VREF + 0.300  
VREF - 0.125  
V
V
INPUT AC LOGIC LEVEL  
All voltages referenced to VSS  
Parameter  
Symbol  
VIH(ACꢀ  
VIL(ACꢀ  
Min  
Max  
Units  
AC Input High (Logic 1ꢀ Voltage  
AC Input Low (Logic 0ꢀ Voltage DDR2-400 & DDR2-533  
VREF+ 0.250  
V
V
V
VREF - 0.250  
TBD  
AC Input Low (Logic 0ꢀ Voltage DDR2-667 (TBDꢀ, DDR2-800 (TBDꢀ  
VIL(ACꢀ  
December 2005  
Rev. 0  
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
DDR2 ICC SPECIFICATIONS AND CONDITIONS  
Symbol Proposed Conditions  
Operating one bank active-precharge current;  
806  
665  
534  
403  
Units  
ICC0*  
t
CK = tCK(ICCꢀ, tRC = tRC(ICCꢀ, tRAS = tRASmin(ICCꢀ; CKE is HIGH, CS# is HIGH between valid  
800  
760  
mA  
TBD  
TBD  
commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating one bank active-read-precharge current;  
IOUT = 0mA; BL = 4, CL = CL(ICCꢀ, AL = 0; tCK = tCK(ICCꢀ, tRC = tRC (ICCꢀ, tRAS = tRAS MIN(ICCꢀ,  
tRCD = tRCD(ICCꢀ; CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs  
are SWITCHING; Data pattern is same as ICC4W  
ICC1*  
880  
800  
mA  
TBD  
TBD  
Precharge power-down current;  
ICC2P** All banks idle; tCK = tCK(ICCꢀ; CKE is LOW; Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
64  
64  
mA  
mA  
mA  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Precharge quiet standby current;  
ICC2Q** All banks idle; tCK = tCK(ICCꢀ; CKE is HIGH, CS# is HIGH; Other control and address bus  
inputs are STABLE; Data bus inputs are FLOATING  
200  
240  
200  
240  
Precharge standby current;  
ICC2N** All banks idle; tCK = tCK(ICCꢀ; CKE is HIGH, CS# is HIGH; Other control and address bus  
inputs are SWITCHING; Data bus inputs are SWITCHING  
Active power-down current;  
Fast PDN Exit MRS(12ꢀ = 0  
240  
120  
240  
120  
mA  
mA  
TBD  
TBD  
TBD  
TBD  
All banks open; tCK = tCK(ICCꢀ; CKE is LOW; Other control  
and address bus inputs are STABLE; Data bus inputs are  
FLOATING  
ICC3P**  
ICC3N**  
ICC4W**  
ICC4R*  
ICC5B**  
ICC6*  
Slow PDN Exit MRS(12ꢀ = 1  
Active standby current;  
All banks open; tCK = tCK(ICCꢀ, tRC = tRC(ICCꢀ, tRAS = tRAS MIN(ICCꢀ; CKE is HIGH, CS# is HIGH  
between valid commands; Other control and address bus inputs are SWITCHING; Data bus  
inputs are SWITCHING  
560  
1600  
1440  
1560  
44  
520  
1160  
1160  
1480  
44  
mA  
mA  
mA  
mA  
mA  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Operating burst write current;  
All banks open, Continuous burst writes; BL = 4, CL = CL(ICCꢀ, AL = 0; tCK = tCK(ICCꢀ, tRAS  
=
tRAS MAX(ICCꢀ, tRP = tRP(ICCꢀ; CKE is HIGH, CS# is HIGH between valid commands; Address  
bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating burst read current;  
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICCꢀ, AL = 0; tCK  
= tCK(ICCꢀ, tRAS = tRAS MAX(ICCꢀ, tRP = tRP(ICCꢀ; CKE is HIGH, CS# is HIGH between valid  
commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W  
Burst auto refresh current;  
tCK = tCK(ICCꢀ; Refresh command at every tRFC(ICCꢀ interval; CKE is HIGH, CS# is HIGH  
between valid commands; Other control and address bus inputs are SWITCHING; Data bus  
inputs are SWITCHING  
Self refresh current;  
CK and CK# at 0V; CKE 0.2V; Other control and  
Normal  
address bus inputs are FLOATING; Data bus inputs are  
FLOATING  
Operating bank interleave read current;  
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICCꢀ, AL = tRCD(ICCꢀ-1*tCK(ICCꢀ; tCK  
tCK(ICCꢀ, tRC = tRC(ICCꢀ, tRRD = tRRD(ICCꢀ, tRCD = 1*tCK(ICCꢀ; CKE is HIGH, CS# is HIGH between  
valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are  
switching.  
=
ICC7*  
2200  
2160  
mA  
TBD  
TBD  
* Value calculated as one module rank in thes operating condition, and all other module ranks in ICC2P (CKE LOWꢀ mode.  
** Value calculated reflects all module ranks in this operating condition  
NOTES:  
• ICC specifications were calculated using SAMSUNG components. Other manufactures DRAMs may have different values.  
December 2005  
Rev. 0  
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
AC TIMING PARAMETERS  
0°C ≤ TCASE < +85°C; VCCQ = + 1.8V 0.1V, VCC = +1.8V 0.1V  
AC CHARACTERISTICS  
PARAMETER  
806  
665  
534  
403  
SYMBOL MIN  
MAX  
TBD  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
UNIT  
ps  
ps  
ps  
ps  
tCK  
tCK  
CL = 6  
CL = 5  
CL = 4  
CL = 3  
tCK (6ꢀ  
TBD  
tCK (5ꢀ  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Clock cycle time  
tCK (4ꢀ  
3,750  
5,000  
0.45  
8,000  
8,000  
0.55  
5,000  
5,000  
0.45  
8,000  
8,000  
0.55  
TBD  
TBD  
tCK (3ꢀ  
TBD  
TBD  
CK high-level width  
CK low-level width  
tCH  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
tCL  
0.45  
0.55  
0.45  
0.55  
TBD  
MIN (tCH  
tCL  
-500  
,
MIN (tCH  
tCL  
-600  
,
Half clock period  
tHP  
ps  
ps  
ps  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
ꢀ
ꢀ
DQ output access time from CK/CK#  
Data-out high-impedance window from  
CK/CK#  
tAC  
+500  
+600  
TBD  
TBD  
TBD  
tHZ  
tAC (MAXꢀ  
tAC (MAXꢀ  
TBD  
Data-out low-impedance window from  
CK/CK#  
tLZ  
tAC (MINꢀ tAC (MAXꢀ tAC (MINꢀ tAC (MAXꢀ  
ps  
TBD  
TBD  
TBD  
TBD  
DQ and DM input setup time relative to DQS  
DQ and DM input hold time relative to DQS  
tDS  
tDH  
100  
225  
150  
275  
ps  
ps  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
A DQ and DM input pulse width (for each  
tDIPW  
0.35  
0.35  
tCK  
ps  
ps  
TBD  
TBD  
TBD  
TBD  
TBD  
inputꢀ  
Data hold skew factor  
DQ…DQS hold, DQS to first DQ to go  
nonvalid, per access  
tQHS  
400  
450  
TBD  
TBD  
tQH  
tHP - tQHS  
tHP - tQHS  
TBD  
TBD  
TBD  
tQH  
- tDQSQ  
tQH  
- tDQSQ  
Data valid output window (DVWꢀ  
tDVW  
ns  
TBD  
TBD  
DQS input high pulse width  
DQS input low pulse width  
DQS output access time from CK/CK#  
DQS falling edge to CK rising … setup time  
DQS falling edge from CK rising … hold time  
tDQSH  
tDQSL  
tDQSCK  
tDSS  
0.35  
0.35  
-450  
0.2  
0.35  
0.35  
-500  
0.2  
tCK  
tCK  
ps  
tCK  
tCK  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
+450  
300  
+500  
350  
TBD  
TBD  
TBD  
TBD  
tDSH  
0.2  
0.2  
TBD  
DQS…DQ skew, DQS to last DQ valid, per  
group,  
tDQSQ  
ps  
TBD  
TBD  
per access  
DQS read preamble  
tRPRE  
tRPST  
tWPRES  
tWPRE  
0.9  
0.4  
0
0.35  
0.4  
1.1  
0.6  
0.9  
0.4  
0
0.35  
0.4  
1.1  
0.6  
tCK  
tCK  
ps  
tCK  
tCK  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
DQS read postamble  
DQS write preamble setup time  
DQS write preamble  
DQS write postamble  
Write command to first DQS latching  
transition  
TBD  
TBD  
TBD  
tWPST  
0.6  
WL +  
0.25  
0.6  
WL +  
0.25  
TBD  
TBD  
TBD  
WL  
- 0.25  
WL  
- 0.25  
tDQSS  
tCK  
tCK  
TBD  
TBD  
TBD  
TBD  
TBD  
Address and control input pulse width for  
each input  
tIPW  
0.6  
0.6  
TBD  
NOTE:  
• AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.  
Continued on next page  
December 2005  
Rev. 0  
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
AC TIMING PARAMETERS (cont'd)  
0°C ≤ TCASE < +85°C; VCCQ = + 1.8V 0.1V, VCC = +1.8V 0.1V  
806 665  
AC CHARACTERISTICS  
534  
403  
PARAMETER  
SYMBOL MIN  
MAX  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
MIN  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
MAX  
MIN  
250  
375  
2
55  
7.5  
15  
37.5  
45  
7.5  
15  
tWR + tRP  
7.5  
15  
MAX  
MIN  
250  
475  
2
55  
7.5  
15  
37.5  
45  
7.5  
15  
tWR + tRP  
10  
15  
MAX UNIT  
Address and control input setup time  
Address and control input hold time  
CAS# to CAS# command delay  
ACTIVE to ACTIVE (same bankꢀ command  
ACTIVE bank a to ACTIVE bank b command  
ACTIVE to READ or WRITE delay  
Four Bank Activate period  
ACTIVE to PRECHARGE command  
Internal READ to precharge command delay  
Write recovery time  
Auto precharge write recovery + precharge time  
Internal WRITE to READ command delay  
PRECHARGE command period  
tIS  
ps  
ps  
tCK  
ns  
ns  
ns  
TBD  
tIH  
TBD  
tCCD  
TBD  
tRC  
TBD  
tRRD  
TBD  
tRCD  
TBD  
tFAW  
37.5  
70,000  
37.5  
70,000 ns  
TBD  
TBD  
TBD  
tRAS  
TBD  
tRTP  
ns  
ns  
ns  
ns  
TBD  
tWR  
TBD  
tDAL  
TBD  
tWTR  
TBD  
tRP  
TBD  
PRECHARGE ALL command period  
LOAD MODE command cycle time  
CKE low to CK,CK# uncertainty  
tRPA  
tWR + tCK  
2
tIS + tCK + tIH  
tWR + tCK  
2
tIS + tCK + tIH  
ns  
tCK  
ns  
TBD  
tMRD  
TBD  
tDELAY  
TBD  
REFRESH to REFRESH command interval  
Average periodic refresh interval  
tRFC  
127.5  
70,000  
7.8  
127.5  
70,000 ns  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
tREFI  
7.8  
µs  
ns  
TBD  
tRFC (MINꢀ  
+ 10  
tRFC (MINꢀ  
+ 10  
Exit self refresh to non-READ command  
tXSNR  
TBD  
TBD  
TBD  
Exit self refresh to READ command  
Exit self refresh timing reference  
ODT turn-on delay  
tXSRD  
tISXR  
tAOND  
200  
tIS  
2
200  
tIS  
2
tCK  
ps  
tCK  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
2
2
TBD  
TBD  
TBD  
TBD  
TBD  
tAC (MAXꢀ  
tAC (MAXꢀ  
+ 1000  
2.5  
ODT turn-on  
tAON  
tAC (MINꢀ  
2.5  
t
AC (MINꢀ  
2.5  
ps  
tCK  
ps  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
+ 1000  
ODT turn-off delay  
ODT turn-off  
tAOFD  
2.5  
TBD  
t
AC (MAXꢀ  
t
AC (MAXꢀ  
tAOF  
tAC (MINꢀ  
tAC (MINꢀ  
TBD  
+ 600  
+ 600  
2 x tCK  
+
2 x tCK +  
tAC (MINꢀ +  
2000  
t
t
AC (MINꢀ +  
2000  
ODT turn-on (power-down modeꢀ  
ODT turn-off (power-down modeꢀ  
tAONPD  
tAC (MAXꢀ  
tAC (MAXꢀ ps  
+ 1000  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
+ 1000  
2.5 x tCK  
+
2.5 x tCK +  
tAC (MINꢀ +  
2000  
AC (MINꢀ +  
2000  
tAOFPD  
tAC (MAXꢀ  
+ 1000  
tAC (MAXꢀ ps  
+ 1000  
TBD  
ODT to power-down entry latency  
ODT power-down exit latency  
tANPD  
tAXPD  
tXARD  
3
8
2
3
8
2
tCK  
tCK  
tCK  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Exit active power-down to READ command,  
TBD  
TBD  
TBD  
TBD  
TBD  
MR[bit12=0]  
Exit active power-down to READ command,  
MR[bit12=1]  
tXARDS  
6 - AL  
6 - AL  
tCK  
tCK  
tCK  
TBD  
A Exit precharge power-down to any non-READ  
tXP  
2
3
2
3
TBD  
TBD  
TBD  
TBD  
TBD  
command.  
CKE minimum high/low time  
tCKE  
TBD  
NOTE:  
• AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.  
December 2005  
Rev. 0  
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
ORDERING INFORMATION FOR D6  
Part Number  
Speed/Data Rate CAS Latency  
tRCD  
6
tRP  
6
Height*  
WV3HG64M64EEU806D6xG**  
WV3HG64M64EEU665D6xG**  
WV3HG64M64EEU534D6xG  
WV3HG64M64EEU403D6xG  
400MHz/800Mb/s  
333MHz/667Mb/s  
266MHz/533Mb/s  
200MHz/400Mb/s  
6
5
4
3
30.00mm (1.181") TYP  
30.00mm (1.181") TYP  
30.00mm (1.181") TYP  
30.00mm (1.181") TYP  
5
5
4
4
3
3
** Consult factory for availability  
NOTES:  
• RoHS compliant product. (G = RoHS Compliantꢀ  
• Vendor specific part numbers are used to provide memory component source control. The place holder for this is shown as a lower case "x"  
in the part numbers above and is to be replaced with respective vendors code. Consult factory for qualified sourcing options.  
(G = Infineon, M = Micron, S = Samsung & consult factory for othersꢀ  
• Consult factory for availability of industrial temperature (-40°C to 85°Cꢀ option  
PACKAGE DIMENSIONS FOR D6  
FRONT VIEW  
133.35 (5.25)  
133.20 (5.244)  
3.00  
(0.118)  
(4x)  
30.50 (1.201)  
29.85 (1.175)  
+
+
17.80 (0.700)  
TYP  
10.00 (0.394)  
TYP  
4.00  
(0.158)  
(4x)  
0.80 0.05  
(0.032 0.002) TYP  
4.00 (0.158)  
PIN 20  
PIN 1  
2.50 0.20  
(0.098 0.007)  
1.50 0.10  
(0.059 0.004)  
1.00 (0.039) TYP  
0.106 (2.70)  
MAX  
5.00  
(0.196)  
BACK VIEW  
63.00 (2.48) TYP  
55.00 (2.165) TYP  
PIN 121  
PIN 1  
0.054 (1.37)  
0.046 (1.17)  
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHESꢀ  
December 2005  
Rev. 0  
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
PART NUMBERING GUIDE  
WV 3 H G 64M 64 E E U xxx D6 x G  
WEDC  
MEMORY (SDRAM)  
DDR 2  
GOLD  
DEPTH (Single Rank)  
BUS WIDTH  
COMPONENT WIDTH x8  
1.8V  
UNBUFFERED  
SPEED (Mb/s)  
PACKAGE 240 PIN  
COMPONENT VENDOR  
NAME  
(G = Infineon)  
(M = Micron)  
(S = Samsung)  
G = RoHS COMPLIANT  
December 2005  
Rev. 0  
10  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
WV3HG64M64EEU-D6  
White Electronic Designs  
ADVANCED  
Document Title  
512MB – 64Mx64 DDR2 SDRAM UNBUFFERED  
Revision History  
Rev #  
History  
Release Date Status  
Rev 0  
Created  
December 2005  
Advanced  
December 2005  
Rev. 0  
11  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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