WT-Z105P-AU4
Zener Diode Chips for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This speciꢂcation applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4
2. Structure:
2-1 Planar type: P/N Diode
2-2 Electrodes:
Top side:Gold Pad(Anode).
Back side:Gold Layer(Cathode).
3. Size:
3-1.*Chip size : 5.9 mils x 5.9 mils (150 µm x 150 µm ).
3-2. Chip thickness : 3.3 0.ꢀ mils (ꢁ5 15 µm ).
3-3. Bonding pad : 3.54 mils x 3.54 mils (90 µm x 90 µm) .
3-4. Pattern drawing : Refer to the attached drawing.
*Including scribing line. The chip size is(125 10)2µm2 after dicing.
Parameter
Symbol
Vz
Condition
Min.
5.7
Typ.
-
Max.
6.7
Unit
V
Zener Voltage
Iz=5mA
VR=4V
nA
-
-
-
-
100
0.5
Reverse Leakage
Current
IR
VR=5V
μA
Forward Voltage
Vf
IF=20mA
V
-
-
-
1.2
-
Electrostatic
Discharge
HBM
MIL-STD883
ESD
KV
8.0
5. Drawing:
6.Protection Circuit
Top View
Bonding pad
Top side
P
Protection
Zener
LED
N-sub
Back side
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
03 - Jul - 07
