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WTX1012

型号：

WTX1012

描述：

N沟道增强型功率MOSFET[ N-Channel ENHANCEMENT MODE POWER MOSFET ]

品牌：

WEITRON[ WEITRON TECHNOLOGY ]

页数：

6 页

PDF大小：

770 K

下载PDF手册
WTX1012  
N-Channel ENHANCEMENT MODE  
POWER MOSFET  
3
P b  
Lead(Pb)-Free  
1
2
FEATURES:  
SC-89  
* Power Mosfet : 1.8V Rated  
* Gate-Source ESD Protected: 2000 V  
* High-Side Switching  
* Low On-Resistance: 0.7Ω  
* Low Threshold: 0.8 V (typ)  
* Fast Switching Speed: 10 ns  
Drain  
3
BENEFITS:  
* Ease in Driving Switches  
* Low-Voltage Operation  
* High-Speed Circuits  
1
(Top View)  
2
* Low Battery Voltage Operation  
Gate  
Source  
APPLICATIONS:  
* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories  
* Battery Operated Systems  
* Power Supply Converter Circuits  
* Load/Power Switching Cell Phones, Pagers  
ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
GS  
V
V
6
T
= 25 C  
= 85 C  
500  
350  
600  
400  
A
b
Continuous Drain Current (T = 150 C)  
J
I
D
T
A
mA  
a
Pulsed Drain Current  
I
1000  
DM  
b
Continuous Source Current (diode conduction)  
I
275  
175  
90  
250  
150  
80  
S
T
= 25 C  
= 85 C  
= 25 C  
= 85 C  
A
b
Maximum Power Dissipation for SC-75  
T
A
P
mW  
D
T
A
275  
160  
250  
140  
b
Maximum Power Dissipation for SC-89  
T
A
Operating Junction and Storage Temperature Range  
Gate-Source ESD Rating (HBM, Method 3015)  
T , T  
−55 to 150  
C
V
J
stg  
ESD  
2000  
Notes  
d. Pulse width limited by maximum junction temperature.  
e. Surface Mounted on FR4 Board.  
Device Marking  
WTX1012 = A  
WEITRON  
http://www.weitron.com.tw  
1/6  
31-Mar-09  
WTX1012  
Electrical Characteristics (T =25°C Unless otherwise noted)  
A
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
V
V
= V , I = 250  
A
0.45  
0.9  
1.0  
V
A
GS(th)  
DS  
GS  
D
Gate-Body Leakage  
I
V
= 0 V, V =  
GS  
4.5 V  
0.5  
0.3  
GSS  
DS  
V
= 20 V, V = 0 V  
100  
5
nA  
A
DS  
GS  
Zero Gate Voltage Drain Current  
I
DSS  
V
= 20 V, V = 0 V, T = 85 C  
GS J  
DS  
1
I
V
DS  
= 5 V, V = 4.5 V  
700  
mA  
On-State Drain Current  
D(on)  
GS  
V
= 4.5 V, I = 600 mA  
D
0.41  
0.53  
0.70  
0.70  
0.85  
1.25  
GS  
a
V
= 2.5 V, I = 500 m A  
D
Drain-Source On-State Resistance  
r
GS  
GS  
DS(on)  
V
= 1.8 V, I = 350 m A  
D
a
Forward Transconductance  
g
1.0  
0.8  
S
V
V
= 10 V, I = 400 mA  
D
fs  
DS  
a
Diode Forward Voltage  
V
SD  
I
S
= 150 mA, V = 0 V  
1.2  
GS  
2
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
750  
75  
225  
5
g
Q
gs  
Q
gd  
V
= 10 V, V = 4.5 V, I = 250 mA  
pC  
ns  
DS  
GS  
D
t
d(on)  
t
r
5
V
= 10 V, R = 47  
L
DD  
I
D
200 mA, V = 4.5 V, R = 10  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
25  
11  
d(off)  
t
f
Notes  
1. Pulse test; pulse width 300 s, duty cycle  
2%.  
2. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is notimplied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
WEITRON  
http://www.weitron.com.tw  
2/6  
31-Mar-09  
WTX1012  
Characteristics Curve  
1.0  
1200  
1000  
800  
600  
400  
200  
0
T
C
= −55 C  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 5 thru 1.8 V  
GS  
25 C  
125 C  
1 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
DS  
Fig.2 Transfer Characteristics  
Fig.1 Output Characteristics  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
100  
80  
60  
40  
20  
0
C
iss  
V
= 1.8 V  
GS  
C
oss  
V
= 2.5 V  
= 4.5 V  
GS  
V
GS  
C
rss  
0
200  
400  
600  
800  
1000  
0
4
8
12  
16  
20  
I
D
− Drain Current (mA)  
V
DS  
− Drain-to-Source Voltage (V)  
Fig.3 On-Resistance vs. Drain Current  
Fig.4 Capacitance  
5
4
3
2
1
0
1.60  
1.40  
1.20  
1.00  
0.80  
0.60  
V
= 10 V  
= 250 mA  
DS  
I
D
V
= 4.5 V  
= 600 mA  
GS  
I
D
V
I
= 1.8 V  
= 350 mA  
GS  
D
0.0  
0.2  
0.4  
0.6  
0.8  
−50  
−25  
0
25  
50  
75  
100  
125  
Q
g
− Total Gate Charge (nC)  
T
J
− Junction Temperature ( C)  
Fig.6 On-Resistance vs. Junction Temperature  
Fig.5 Gate Charge  
WEITRON  
http://www.weitron.com.tw  
3/6  
31-Mar-09  
WTX1012  
Characteristics Curve  
1000  
5
4
3
2
1
0
T
J
= 125 C  
I
D
= 350 mA  
100  
10  
T
J
= 25 C  
I
D
= 200 mA  
T
J
= −55 C  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
1
2
3
4
5
6
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Fig.7  
Fig.8  
0.3  
0.2  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
D
= 0.25 mA  
0.1  
−0.0  
−0.1  
−0.2  
−0.3  
V
GS  
= 4.5 V  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
T − Temperature ( C)  
J
50  
75  
100  
125  
T
− Temperature ( C)  
J
Fig.9 Threshold Voltage Variance vs. Temperature  
Fig.10 I  
vs. Temperature  
GSS  
7
6
5
4
3
2
1
0
−50  
−25  
0
25  
50  
75  
100  
125  
T
− Temperature ( C)  
Fig.11 BV  
vs. Temperature  
GSS  
WEITRON  
http://www.weitron.com.tw  
4/6  
31-Mar-09  
WTX1012  
Characteristic Curves  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
0.02  
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 833 C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Fig.12 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Fig.13 Normalized Thermal Transient Impedance, Junction-to-Foot  
WEITRON  
http://www.weitron.com.tw  
5/6  
31-Mar-09  
WTX1012  
SC-89 Outline Demensions  
Unit:mm  
A
SC-89  
Dim  
A
B
C
D
Min  
Nom  
1.60  
0.85  
0.70  
0.28  
Max  
1.70  
0.95  
0.80  
0.33  
3
1.50  
0.75  
0.60  
0.23  
B
S
TOP VIE W  
2
1
K
G
G
J
K
M
N
0.50BSC  
0.15  
0.40  
---  
D
0.20  
0.50  
10  
10  
1.70  
0.10  
0.30  
---  
---  
1.50  
N
M
---  
1.60  
J
S
C
WEITRON  
http://www.weitron.com.tw  
6/6  
31-Mar-09  
厂商 型号 描述 页数 下载

WEITRON

 		WTX7002 N沟道增强型功率MOSFET[ N-Channel ENHANCEMENT MODE POWER MOSFET ] 5 页

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