PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
80
80
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
4.0
V
0.1
0.1
µA
µA
ICBO
Collector-Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
100
100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
V
VCE(sat)
VBE(on)
IC = 100 mA, VCE = 1.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
50
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p
Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
300
250
200
150
100
50
0.8
0.6
0.4
0.2
0
VCE = 1V
β
= 10
125 °C
25 °C
25 °C
- 40 ºC
- 40 ºC
125 °C
0.001
0.01
0.1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
