IXTN 58N50
IXTN 61N50
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
miniBLOC, SOT-227 B
Min.
Typ.
Max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS= 0 V, VDS = 25 V, f = 1 MHz
20
30
S
Ciss
Coss
Crss
11000
1550
225
pF
pF
pF
td(on)
tr
td(off)
tf
30
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
M4 screws (4x) supplied
RG = 1 Ω (External)
100
50
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Qg
420
55
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = ID2
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
160
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
RthJC
RthCK
0.20 K/W
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
0.05
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
Min. Typ.
Max.
IS
VGS = 0 V
61
A
A
ISM
Repetitive; pulse width limited by TJM
244
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
trr
IF = 50A, di/dt = -100 A/µs, VR = 100 V
800 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
