VDSS
ID25
RDS(on)
High Current
MegaMOSTMFET
IXTK 74 N20
IXTH 68 N20
200V 74 A 35 mW
200V 68 A 35 mW
N-Channel Enhancement Mode
Preliminary data
Symbol Test conditions
Maximum ratings
TO-247AD (IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TC = 25°C
74N20
68N20
74
68
A
A
TO-264 AA (IXTK)
TC = 25°C, pulse width limited by TJM
74N20
68N20
296
272
A
A
PD
TC = 25°C
74N20
68N20
416
300
W
W
D (TAB)
G
TJ
-55 ... +150
150
°C
°C
°C
D
S
TJM
Tstg
G = Gate
S = Source
D
= Drain
-55 ... +150
Tab = Drain
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-264
TO-247
10
6
g
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol Test Conditions
Characteristic Values
Applications
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 5 mA
VDS = VGS, ID = 4 mA
VGS = ±20 V DC, VDS = 0
200
V
V
2.0
4.0
±100
nA
Advantages
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
500
3
µA
mA
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
35 mΩ
High power density
95512C(12/97)
IXYS reserves the right to change limits, test conditions and dimensions.
© 1998 IXYS All rights reserved
C2 - 14
