MegaMOSTMFET
IXTH 20N60 VDSS = 600 V
IXTM 20N60 ID25 = 20 A
RDS(on) = 0.35 Ω
N-ChannelEnhancementMode
Symbol
Test Conditions
MaximumRatings
TO-247 AD (IXTH)
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
D(TAB)
VGSM
ID25
TC = 25°C
15N60
20N60
15
20
A
A
TO-204 AE (IXTM)
IDM
TC = 25°C, pulse width limited by TJM
15N60
20N60
60
80
A
A
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
G
D
TJM
Tstg
G = Gate,
S = Source,
D = Drain,
TAB = Drain
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Weight
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
Features
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
Switch-modeandresonant-mode
powersupplies
Motorcontrol
UninterruptiblePowerSupplies(UPS)
DC choppers
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
600
2
V
V
VGS(th)
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 µA
Advantages
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.35
Ω
Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91537E(5/96)
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