WTN1A80
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage:800V
■
R.M.S On-State Current(I =1A
T(RMS)
■ Low on-state voltage: V =1.2(typ.)@ I
TM
TM
■ Low reverse and forward blocking current:
I
=500uA@TC=125℃
DRM
■ Low holding current: I =4mA (typ.)
H
■
High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
VDRM
IT(RMS)
ITSM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
condition
Ratings
800
Units
V
Tc=86℃
Full sine wave, 20/16.7ms
1
A
12.5/13.8
1.28
5.0
A
I2t
A2s
W
PGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
PG(AV)
IGM
0.5
W
2.0
A
VGM
Peak Gate Voltage
5
V
TJ
Operating Junction Temperature
Storage Temperature
125
℃
℃
TSTG
-40~150
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
60
℃/W
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
