WT-Z224V-AU4
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 This specification applies to N/P/N silicon zener double diodes chips,
Device NO. WT-Z224V-AU4
2. Structure:
2-1. Planar type : N/P/N Diode.
2-2. Electrodes :
Top side : Gold pad.
Back side : Gold Layer.
3. Size:
3-1. Chip size : 24 mils x 24 mils (609.6 μm x 609.6 μm).
3-2. Chip thickness :7.87 1.0 mils (200 2.54 μm).
3-3. Bonding pad : 19.3 mils x 19.3 mils (490 μm x 490 μm) .
3-4. Pattern drawing : Refer to the attached drawing.
* Including scribing line. The chip size is about 23mil(585μm) after dicing.
4. Electrical Characteristics (T =25˚C)
A
Parameter
Symbol
Condition
Min. Typ.
Max. Unit
V=4V
H=0mW/cm2
-
-
-
-
-
-
-
-
nA
100
Idf
V=5V
H=0mW/cm2
µA
nA
µA
0.5
Leakage Current
V=4V
100
H=0mW/cm2
Idr
V=5V
0.5
7.0
H=0mW/cm2
Izf=5mA
Vz(forward)
Vz(reverse)
5.5
-
H=0mW/cm2
V
Zener Voltage
Izf=5mA
5.3
-
-
-
6.8
H=0mW/cm2
Maximum
Zener Current
I
750
ZM
mA
KV
HBM
MIL-STD883
Electrostatic
Discharge
ESD
8.0
-
-
5. Annotation :
5-1. Parallel with one LED
5-2. Single pad (one wire bonding applied only)
5-3. Double direction Zener diode protection
6. Drawing:
7. Protection Circuit:
(Top View)
Top side
Bonding pad
LED
N
P
PROTECTION
ZENER
N
Bonding pad
Back Side
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
Rev.A 08-Mar-07
