WT-Z210V-AU4
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to N/P/N-Type silicon Zener diode chip (Dual pad/Vertical)
Device NO:WT-Z210V-AU4
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
Top side : Gold Pad.(Cathode)
Back side : Gold Layer.(Anode)
3. Size:
3-1 Chip size: 10.0 mils x 10.0 mils (254 um x 254 um).
3-2 Chip thickness: 4.0 ± 1.0 mils (100 ± 25.4 um).
3-3 Dual Bonding pad: 7.7 mils x 7.7mils (195um x 195um).
3-4 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
V
Vz(Top)
-
-
5.8
5.4
7.0
6.6
Zener Voltage
I
z
=5mA
V (Back)
z
Forward
Voltage
Vf
IR
1.2
I
F
=20mA
V
Reverse Leakage
Current
VR
=4V
nA
100
Electrostatic
Discharge
HBM
MIL-STD 883
KV
ESD
8.0
5. Drawing:
6. Protection Circuit:
(Top View)
Bonding pad
Top side
LED
Protection
Zener
N
P-Sub
N
Bonding pad
Back Side
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Bonding pad
Http://www.weitron.com.tw
30 - Jun - 06
