WT-Z206V-AU4
Zener Diode Chips for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application
1-2 This specification applies to N/P/N-Type silicon Zener diode chip(Vertical)
Device NO:WT-Z206V-AU4
2. Structure:
2-1. Planar type : Silicon Diode.
2-2. Electrodes :
Top side : Gold pad(Cathode).
Back side : Gold Layer(Cathode).
3. Size:
3-1. *Chip size : 6.88 mils x 6.88 mils (175 µm x 175 µm ).
3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15 µm ).
3-3. Bonding pad : 4.5 mils x 4.5 mils (115 µm x 115 µm) .
3-4. Pattern drawing : Refer to the attached drawing.
*Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
V
Vz(Top)
-
-
5.3
5.5
6.8
7.0
Zener Voltage
Iz =5mA
V (Back)
z
Forward
Voltage
-
-
-
-
-
V
f
1.2
100
-
IF =20mA
V=4V
V
Leakage
Current
IR
nA
HBM
Electrostatic
Discharge
KV
ESD
8.0
MIL-STD 883
Note:
1. Parallel with one LED
2. Single pad (one wire bonding applied only)
3. Double direction Zener diode protection
5. Drawing:
6. Protection Circuit:
Bonding pad
(Top View)
Top side
LED
Protection
Zener
N
P
N
Back Side
Bonding pad
WEITRON TECHNOLOGY CO., LTD.
TEL:886-2-29148158
FAX:886-2-29106796
Http://www.weitron.com.tw
06 - Jan - 06
