WT-Z106P-AU4-14
Zener Diode Chips for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application
1-2 This speciꢁcation applies to P-Type silicon Zener diode chipDevice NO:WT-Z1ꢀ6P-AU4-14
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
Top side:Gold Pad(Anode).
Back side:Gold Layer(Cathode).
3. Size:
3-1. *Chip size : 6.88 mils x 6.88 mils (175µm x 17.5µm ).
3-2. Chip thickness : 3.3 ꢀ.6 mils (85 15µm ).
3-3. Active area : 4.1 mils x 4.1 mils (1ꢀ5µm x 1ꢀ5µm).
3-4. Bonding pad : 4.5 mils x 4.5 mils (115µm x 115µm) .
3-5. Pattern drawing : Refer to the attached drawing.
* Including scribing line. The chip size is about 5.9mil(ꢀ.15ꢀmm) after dicing.
4. Electrical Characteristics (Ta=25ºC)
Parameter
Symbol
Condition
Min.
12.5
-
Typ. Max. Unit
Zener Voltage
V
Z
I =5mA
Z
-
-
15.5
1.2
V
V
Forward Voltage
I =20mA
F
V
f
Reverse Leakage
Current
I
-
-
-
R
V =10V
R
100
-
nA
Electrostatic
Discharge
HBM
MIL-STD 883
KV
ESD
8.0
5. Drawing:
Bonding pad
Top side
P
N-sub
Back side
WEITRON TECHNOLOGY CO., LTD.
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Http://www.weitron.com.tw
20-Jul-07
