CZD1386
-5 A, -30 V
PNP Epitaxial Silicon Transistor
Elektronische Bauelemente
DESCRIPTION
The CZD1386 is designed for low frequency applications.
FEATURES
z
Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A)
z
Excellent DC current gain characteristics
PACKAGE DIMENSIONS
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Min.
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
0.50
2.20
0.45
0
2.30 Ref.
0.90
5.40
0.80
0.70
0.60
0.90
0.90
M
R
S
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
-30
-20
-6
V
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
V
A
-5
*Collector Current (Pulse)
Total Power Dissipation
Junction, Storage Temperature
IC
-10
20
A
Pc
W
℃
TJ, TSTG
+150, -55 ~ +150
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-30
-20
-6
-
-
-
V
IC=-50uA
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
-
-
-
V
IC=-1mA
-
V
IE=-50uA
-
-
-500
-500
-1
nA
nA
mV
VCB=-20V
-
VEB=-5V
-
-
IC=-4A, IB=-0.1mA
VCE=-2V, IC=-0.5mA
82
-
-
580
-
fT
120
60
MHz
pF
VCE=-6V, IE=50mA, f=30MHz
VCB=-20V, IE=0, f=1MHz
Cob
-
-
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE1
Rank
P
Q
R
E
Range
82 - 180
120 - 270
180 - 390
370 - 580
01-June-2002 Rev. A
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