CZD2983
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage
BVCBO
160
-
-
V
IC= 1mA, IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BVCEO
BVEBO
ICBO
160
-
-
-
-
-
-
-
-
-
V
V
A
A
V
V
IC= 10mA, IB=0
5
-
IE= 1mA, IC=0
1
VCB= 160V, IE=0
VEB= 5V, IC=0
Emitter cut-off current
IEBO
-
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
*DC current gain
VCE(sat)
VBE(on)
*
*
-
1.5
1.0
240
IC= 500mA, IB= 50mA
VCE= 5V, IC= 500mA
VCE= 5V, IC= 100mA
-
hFE
fT
COB
*
70
Transition frequency
Output Capacitance
-
-
100
25
-
-
MHz VCE= 10V, IC= 100mA
pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width ≦ 300μs, Duty Cycle ≦ 2%
CLASSIFICATION OF hFE
Rank
O
Y
120 ~ 240
Range
70 ~ 140
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
03-Sep-2010 Rev. A
Page 2 of 3
