CZD1952
PNP High Speed
Elektronische Bauelemente
Switching Transistor
RoHS Compliant Product
TO-252
Description
The CZD1952 is designed for high speed switching applications.
Features
* Wide SOA
* Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A
* High Speed Switching,Typically tf=-0.15us at IC=-3A
* Complements to CZD5103
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
2.80
Min.
0.50
2.20
0.45
0
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.20
G
H
J
K
L
2.30 REF.
0.90
5.40
0.80
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings at TA=25oC (unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
Ratings
Unit
V
VCBO
-100
-60
V
V
VCEO
VEBO
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current (DC)
-
5.
-
5
IC
IC
A
-
10
1
A
Collect Current (Pulse)
PD (TA =25o
)
)
C
W
Total Power Dissipation
PD(TC =25o
10
C
W
oC
Tj, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICES
Min. Typ. Max. Unit
Test Conditions
-
-
-
-
-
-
-
IC= 50 uA, IE=0
-
IC= 1mA, IB=0
100
V
V
-
60
-
-
-
-
5
-
IE= 50uA, IC=0
V
uA
-
10
-
VCE= 100V, VEB=0
-
10
-0.3
-0.5
uA
V
V
-
-
-
-
-
-
-
Emitter Cut-off Current
IEBO
*VCE(sat)1
VEB= 5V, IC=0
-
IC= 3A, IB=
-4 , IB=
IC= 3A, IB=
-0.15A
Collector-Emitter Saturation Voltage
-0.2A
IC=
*VCE(sat)2
*VBE(on)1
*VBE(on)2
-
-0.15A
-0.2A
-
-
-
1.2
-
-
V
V
Base-Emitter Voltage, On
-
-4 , IB=
IC=
1.5
-
-
320
-2
-
-
120
40
-
-
-
-
-
VCE= V, IC= 1A
DC Current Gain
DC Current Gain
*hFE1
*hFE2
Cob
fT
ton
tstg
tf
-
VCE=-2V, IC= 3A
VCB=-10V,IE=0,f=1MHz
-
-
pF
MHz
Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
130
80
-
-
-
-
VCE=10V,
IE=0.5A,f=30MHz
0.3
1.5
0.3
Ω
IC=-3A,RL=10
IB1=-IB2=-0.15A
VCC=-30V
uS
*Measure using pulse current
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Feb-2008 Rev. B
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