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2SK3799

型号：

2SK3799

描述：

硅N沟道MOS型开关稳压器的应用[ Silicon N-Channel MOS Type Switching Regulator Applications ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
2SK3799  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)  
2SK3799  
Switching Regulator Applications  
Unit: mm  
ꢀ
ꢀ
ꢀ
ꢀ
Low drain-source ON resistance  
High forward transfer admittance  
: R = 1.0 Ω (typ.)  
DS (ON)  
: |Y | = 6.0 S (typ.)  
fs  
Low leakage current : I  
= 100μA (max) (V  
= 720 V)  
= 10 V, I = 1 mA)  
DSS  
DS  
Enhancement model : V = 2.0 to 4.0 V (V  
th  
DS  
D
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
900  
900  
±30  
8
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
24  
A
DP  
1. Gate  
2. Drain  
3. Source  
Drain power dissipation  
P
50  
W
D
AS  
AR  
Single pulse avalanche energy  
E
1080  
mJ  
(Note 2)  
JEDEC  
JEITA  
—
Avalanche current  
I
8
5
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
SC-67  
2-10U1B  
AR  
T
ch  
150  
TOSHIBA  
Storage temperature range  
T
stg  
−55~150  
Weight: 1.7 g (typ.)  
2
Thermal Characteristics  
Characteristic  
Symbol  
Max  
2.5  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
1
R
62.5  
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.  
Note 2: V = 90 V, T = 25°C (initial), L = 30.9 mH, R = 25Ω, I = 8 A  
DD ch AR  
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2005-01-24  
2SK3799  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= ±30 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
—
±30  
—
—
—
±10  
—
µA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-off current  
V
V
I
= ±10 µA, V  
= 0 V  
(BR) GSS  
G
GS  
I
V
DS  
= 720 V, V = 0 V  
GS  
—
100  
—
µA  
V
DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 10 mA, V  
= 0 V  
450  
2.0  
—
—
(BR) DSS  
D
GS  
V
V
DS  
V
GS  
V
DS  
= 10 V, I = 1 mA  
—
4.0  
1.3  
—
V
th  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 4 A  
1.0  
6.0  
2200  
45  
Ω
DS (ON)  
D
|Y |  
fs  
= 15 V, I = 4 A  
3.5  
—
S
D
C
C
—
iss  
V
DS  
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
—
—
rss  
C
oss  
—
190  
—
Rise time  
t
—
—
—
25  
65  
20  
—
—
—
r
I
= 4 A  
D
10 V  
GS  
0 V  
Output  
V
Turn-on time  
t
on  
Switching time  
ns  
Fall time  
t
f
V
≈ 400 V  
DD  
Turn-off time  
t
—
—
120  
60  
—
—
off  
Duty ≤ 1%, tw = 10 µs  
Total gate charge (Gate-source  
plus gate-drain)  
Q
g
V
DD  
≈ 400 V, V  
= 10 V, I = 8 A  
nC  
GS  
D
Gate-source charge  
Q
—
—
34  
26  
—
—
gs  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
—
Typ.  
—
Max  
8
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
—
—
DR  
Pulse drain reverse current  
(Note 1)  
I
—
—
24  
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 8 A, V  
= 8 A, V  
= 0 V  
= 0 V  
—
—
—
—
1700  
23  
−1.7  
—
V
DSF  
DR  
DR  
GS  
t
ns  
µC  
rr  
GS  
dl  
/ dt = 100 A / µS  
DR  
Qrr  
—
Marking  
K3799  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2005-01-24  
2SK3799  
I
– V  
I
– V  
D DS  
D
DS  
10  
8
20  
16  
12  
8
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
15  
10  
15  
6
6
10  
5.5  
5.25  
6
5.5  
5
4
4.75  
5
2
4
V
GS  
= 4.5 V  
V
GS  
= 4.5 V  
0
0
0
2
4
6
8
10  
0
0
1
4
8
12  
16  
20  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
DS  
I
– V  
V
– V  
D
GS  
DS GS  
20  
16  
12  
8
20  
16  
12  
8
COMMON SOURCE  
= 20 V  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
V
DS  
PULSE TEST  
25  
I
D
= 8 A  
100  
Tc = −55°C  
4
2
4
4
0
0
0
2
4
6
8
10  
4
8
12  
16  
20  
GATE−SOURCE VOLTAGE  
V
(V)  
GATE−SOURCE VOLTAGE  
V
(V)  
GS  
GS  
R
− I  
D
DS (ON)  
⎪Y ⎪ − I  
fs  
D
10  
100  
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
= 20 V  
V
DS  
PULSE TEST  
PULSE TEST  
V
= 10 V  
GS  
1
10  
Tc = −55°C  
100  
25  
1
0.1  
0.1  
10  
DRAIN CURRENT  
100  
1
10  
100  
DRAIN CURRENT  
I
(A)  
I
D
(A)  
D
3
2005-01-24  
2SK3799  
R
− Tc  
I
− V  
DS  
DS (ON)  
DR  
5
4
3
2
1
0
100  
10  
1
COMMON SOURCE  
COMMON SOURCE  
V
= 10 V  
GS  
PULSE TEST  
Tc = 25°C  
PULSE TEST  
I
D
= 8 A  
4
2
10  
1
5
3
V
= 0 V  
GS  
0.1  
−80  
−40  
0
40  
80  
120  
160  
0
−0.4  
−0.8  
−1.2  
−1.6  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
C − V  
V
− Tc  
th  
DS  
10000  
5
4
3
2
1
0
C
iss  
1000  
100  
10  
C
oss  
C
rss  
COMMON SOURCE  
= 0 V  
f = 1 MHz  
Tc = 25°C  
COMMON SOURCE  
= 10 V  
V
GS  
V
I
DS  
= 1 mA  
D
PULSE TEST  
1
0.1  
1
10  
100  
−80  
−40  
0
40  
80  
120  
160  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
P
– Tc  
D
80  
60  
40  
20  
0
500  
20  
COMMON SOURCE  
I
= 8 A  
D
Tc = 25°C  
V
DS  
PULSE TEST  
400  
300  
200  
100  
16  
12  
8
100  
V
DS  
= 400 V  
200  
V
GS  
4
0
0
0
100  
0
40  
80  
120  
160  
20  
40  
60  
80  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE  
Q
(nC)  
g
4
2005-01-24  
2SK3799  
r
– t  
w
th  
10  
1
Duty=0.5  
0.2  
0.1  
0.1  
0.01  
0.05  
P
DM  
0.02  
0.01  
t
T
SINGLE PULSE  
Duty = t/T  
R
= 2.5°C/W  
th (ch-c)  
0.001  
10μ  
100μ  
1ｍ  
10ｍ  
100ｍ  
1
10  
PULSE WIDTH  
t
(s)  
w
SAFE OPERATING AREA  
E
– T  
AS ch  
100  
10  
2000  
1600  
1200  
800  
400  
0
I
max (PULSE) *  
D
100 μs *  
I
D
max (CONTINUOUS)  
1 ms *  
1
DC OPERATION  
Tc = 25°C  
0.1  
*
SINGLE NONPETITIVE PULSE  
Tc = 25°C  
Curves must be derated linearly  
with increase in temperature.  
25  
50  
75  
100  
125  
T
150  
V
DSS  
max  
0.01  
CHANNEL TEMPERATURE (INITIAL)  
(°C)  
1
10  
100  
1000  
10000  
ch  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
B
VDSS  
15 V  
−15 V  
I
AR  
V
DD  
V
DS  
TEST CIRCUIT  
WAVE FORM  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
R
= 25 Ω  
= 90 V, L = 30.9 mH  
1
2
B
2
G
VDSS  
=
⋅L⋅I ⋅  
Ε
AS  
V
−
V
DD  
DD  
B
VDSS  
5
2005-01-24  
2SK3799  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2005-01-24  
厂商 型号 描述 页数 下载

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ETC

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ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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