请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGX72N60A3H1

型号：

IXGX72N60A3H1

描述：

GenX3 600V IGBT W /二极管[ GenX3 600V IGBT w/Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

228 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V IGBT  
w/Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 72A  
≤£ 1.35V  
= 250ns  
IXGK72N60A3H1  
IXGX72N60A3H1  
Ultra-Low Vsat PT IGBTs for  
up to 5kHz Switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
(TAB)  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 110°C  
75  
72  
A
A
A
A
A
V
PLUS247 (IXGX)  
IC110  
IF110  
68  
ICM  
TC = 25°C, 1ms  
400  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 150  
@ VCE ≤ 600  
G
(TAB)  
C
E
PC  
TC = 25°C  
540  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
z Optimized for Low Conduction Losses  
z Square RBSOA  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z Anti-Parallel Ultra Fast Diode  
z International Standard Packages  
TSOLD  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Power Inverters  
z UPS  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
300  
5
μA  
mA  
z Motor Drives  
TJ = 125°C  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
V
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.35  
DS100144(04/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK72N60A3H1  
IXGX72N60A3H1  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
48  
75  
S
Cies  
Coes  
Cres  
6600  
360  
80  
pF  
pF  
pF  
Qg  
230  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
80  
td(on)  
tri  
31  
34  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
1.4  
320  
250  
3.5  
mJ  
ns  
VCE = 480V, RG = 3Ω  
DIM  
INCHES  
MIN  
MILLIMETERS  
ns  
MAX  
MIN  
MAX  
Eoff  
mJ  
A
A1  
b
b1  
b2  
c
D
E
e
J
0.185  
0.102  
0.037  
0.087  
0.110  
0.017  
1.007  
0.760  
.215 BSC  
0.000  
0.000  
0.779  
0.087  
0.122  
0.240  
0.330  
0.155  
0.085  
0.243  
0.209  
0.118  
0.055  
0.102  
0.126  
0.029  
1.047  
0.799  
4.70  
2.59  
0.94  
2.21  
2.79  
0.43  
25.58  
19.30  
5.46 BSC  
0.00  
0.00  
19.79  
2.21  
3.10  
6.10  
8.38  
3.94  
2.16  
6.17  
5.31  
3.00  
1.40  
2.59  
3.20  
0.74  
26.59  
20.29  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.6  
510  
375  
6.5  
mJ  
ns  
VCE = 480V, RG = 3Ω  
ns  
0.010  
0.010  
0.842  
0.102  
0.138  
0.256  
0.346  
0.187  
0.093  
0.253  
0.25  
0.25  
21.39  
2.59  
3.51  
6.50  
8.79  
4.75  
2.36  
6.43  
K
L
Eoff  
mJ  
L1  
ØP  
Q
Q1  
ØR  
ØR1  
S
RthJC  
RthCS  
0.23 °C/W  
°C/W  
0.15  
Reverse Diode (FRED)  
PLUS247TM (IXGX) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Values  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.0  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
IF = 60A, VGE = 0V,  
8.3  
A
trr  
IF = 60A, -di/dt = 200A/μs, VR = 300V  
140  
ns  
0.3 °C/W  
RthJC  
Terminals: 1 - Gate  
3 - Source (Emitter)  
2 - Drain (Collector) 4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK72N60A3H1  
IXGX72N60A3H1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
I C = 120A  
I C = 60A  
7V  
5V  
I C = 30A  
100  
-50  
-25  
0
25  
50  
75  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 25ºC  
I C = 120A  
60A  
30A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK72N60A3H1  
IXGX72N60A3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 60A  
I G = 10 mA  
25ºC  
80  
125ºC  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
160  
140  
120  
100  
80  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
C
oes  
60  
TJ = 125ºC  
40  
RG = 3Ω  
dV / dt < 10V / ns  
20  
res  
0
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.  
IXYS REF: G_72N60A3(76)4-23-09-C  
IXGK72N60A3H1  
IXGX72N60A3H1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
18  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
6.75  
6.00  
5.25  
4.50  
3.75  
3.00  
2.25  
1.50  
0.75  
0.00  
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
,
VCE = 480V  
I C = 100A  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
V
I C = 50A  
TJ = 25ºC  
6
6
4
4
2
2
I C = 25A  
15  
0
0
0
5
10  
20  
25  
30  
35  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
390  
387  
384  
381  
378  
375  
372  
369  
366  
363  
360  
1400  
18  
16  
14  
12  
10  
8
7
6
5
5
4
3
2
2
1
0
tf  
td(off)  
- - - -  
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
1300  
1200  
1100  
1000  
900  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
,
CE = 480V  
V
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
800  
6
700  
4
600  
I C = 25A  
500  
2
I C = 25A  
400  
0
0
5
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
580  
540  
500  
460  
420  
380  
340  
300  
260  
220  
400  
610  
570  
530  
490  
450  
410  
370  
330  
290  
250  
380  
360  
340  
320  
300  
280  
260  
240  
220  
TJ = 125ºC  
I C = 25A, 50A, 100A  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
tf td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
TJ = 25ºC  
VCE = 480V  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK72N60A3H1  
IXGX72N60A3H1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
120  
110  
100  
90  
120  
110  
100  
90  
tr  
td(on)  
- - - -  
t r  
td(on) - - - -  
TJ = 25ºC  
TJ = 125ºC , VGE = 15V  
CE = 480V  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
V
I C = 100A  
TJ = 125ºC  
80  
80  
70  
70  
60  
60  
I C = 50A  
I C = 25A  
50  
50  
40  
40  
30  
30  
20  
20  
10  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
I C = 100A  
tr  
td(on)  
- - - -  
RG = 3 , VGE = 15V  
Ω
VCE = 480V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions.  
IXYS REF: G_72N60A3(76)4-23-09-C  
IXGK72N60A3H1  
IXGX72N60A3H1  
Fig. 22  
Fig. 23  
Fig. 21  
Fig. 24  
Fig. 25  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
[ s ]  
Pulse Width [ms]  
Fig. 26 Maximum transient thermal impedance junction to case (for diode)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_72N60A3(76)4-23-09-C  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.190319s