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IXGX72N60B3H1

型号：

IXGX72N60B3H1

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

222 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 72A  
≤£ 1.8V  
= 92ns  
IXGK72N60B3H1  
IXGX72N60B3H1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
PLUS247 (IXGX)  
IC25  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
72  
A
A
A
A
IC110  
ICM  
450  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped inductive load @ VCE ≤ 600V  
ICM = 240  
G
C
E
PC  
TC = 25°C  
540  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
Features  
z Optimized for low conduction and  
switching losses  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
TSOLD  
Weight  
z Square RBSOA  
TO-264  
PLUS247  
10  
6
g
g
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z High power density  
z Low gate drive requirement  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
Applications  
VCE = VCES  
VGE = 0V  
300  
5
μA  
mA  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
V
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
IC = 120A  
1.50  
1.75  
1.80  
DS99869A(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK72N60B3H1  
IXGX72N60B3H1  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
45  
76  
S
Cies  
Coes  
Cres  
6800  
575  
80  
pF  
pF  
pF  
Qg  
225  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
82  
td(on)  
tri  
31  
33  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
1.4  
152  
92  
mJ  
240 ns  
150 ns  
DIM  
INCHES  
MIN  
MILLIMETERS  
VCE = 480V, RG = 3Ω  
MAX  
MIN  
MAX  
A
A1  
b
b1  
b2  
c
D
E
e
J
0.185  
0.102  
0.037  
0.087  
0.110  
0.017  
1.007  
0.760  
.215 BSC  
0.000  
0.000  
0.779  
0.087  
0.122  
0.240  
0.330  
0.155  
0.085  
0.243  
0.209  
0.118  
0.055  
0.102  
0.126  
0.029  
1.047  
0.799  
4.70  
2.59  
0.94  
2.21  
2.79  
0.43  
25.58  
19.30  
5.46 BSC  
0.00  
0.00  
19.79  
2.21  
3.10  
6.10  
8.38  
3.94  
2.16  
6.17  
5.31  
3.00  
1.40  
2.59  
3.20  
0.74  
26.59  
20.29  
Eoff  
1.0  
2.0 mJ  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A,VGE = 15V  
Eon  
td(off)  
tfi  
2.7  
228  
142  
2.2  
mJ  
ns  
0.010  
0.010  
0.842  
0.102  
0.138  
0.256  
0.346  
0.187  
0.093  
0.253  
0.25  
0.25  
21.39  
2.59  
3.51  
6.50  
8.79  
4.75  
2.36  
6.43  
V
CE = 480V,RG = 3Ω  
K
L
ns  
Eoff  
mJ  
L1  
ØP  
Q
Q1  
ØR  
ØR1  
S
RthJC  
RthCS  
0.23 °C/W  
°C/W  
0.15  
PLUS247TM (IXGX) Outline  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
Test Conditions  
Min. Typ.  
Max.  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.0  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
trr  
8.3  
A
IF = 60A, VGE = 0V,  
140  
ns  
-diF/dt = 200A/μs, VR = 300V  
RthJC  
0.3 °C/W  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK72N60B3H1  
IXGX72N60B3H1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
0
1
2
3
4
5
6
7
8
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
120  
100  
80  
60  
40  
20  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 120A  
I C = 60A  
9V  
7V  
I C = 30A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 120A  
60A  
30A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK72N60B3H1  
IXGX72N60B3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
VCE = 300V  
I C = 60A  
TJ = - 40ºC  
25ºC  
125ºC  
I G = 10mA  
80  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
280  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
dV / dt < 10V / ns  
40  
= 1 MHz  
5
f
0
100  
10  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK72N60B3H1  
IXGX72N60B3H1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
RG = 3ꢀ VGE = 15V  
off  
,
VCE = 480V  
I C =100A  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
I C = 50A  
I C = 25A  
TJ = 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
7
6
5
4
3
2
1
0
7
240  
220  
200  
180  
160  
140  
120  
100  
80  
1300  
1150  
1000  
850  
I C = 25A, 50A, 100A  
6
5
4
3
2
1
0
I C = 100A  
I C = 100A  
700  
E
E
on - - - -  
I C = 50A  
off  
RG = 3ꢀ VGE = 15V  
,
VCE = 480V  
I C = 50A  
550  
400  
tf  
td(off) - - - -  
I C = 25A  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
250  
I C = 25A  
105 115 125  
100  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
220  
200  
180  
160  
140  
120  
100  
80  
260  
245  
230  
215  
200  
185  
170  
155  
140  
230  
210  
190  
170  
150  
130  
110  
90  
250  
235  
220  
205  
190  
175  
160  
145  
130  
TJ = 125ºC  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
I C = 25A, 50A, 100A  
VCE = 480V  
tr  
td(off)  
- - - -  
RG = 3 , VGE = 15V  
ꢀ
TJ = 25ºC  
70  
VCE = 480V  
60  
70  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK72N60B3H1  
IXGX72N60B3H1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
170  
150  
130  
110  
90  
140  
125  
110  
95  
90  
80  
70  
60  
50  
40  
30  
20  
10  
34  
33  
32  
31  
30  
29  
28  
27  
26  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 3Ω , VGE = 15V  
CE = 480V  
VCE = 480V  
V
I C = 100A  
TJ = 25ºC, 125ºC  
80  
25ºC < TJ < 125ºC  
70  
65  
I C = 50A  
50  
50  
30  
35  
I C = 25A  
10  
20  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I C = 100A  
tr  
td(on  
) - - - -  
RG = 3 , VGE = 15V  
ꢀ
VCE = 480V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_72N60B3(76)06-26-08-C  
IXGK72N60B3H1  
IXGX72N60B3H1  
Fig. 22  
Fig. 23  
Fig. 21  
Fig. 24  
Fig. 25  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
[ s ]  
Pulse Width [ms]  
Fig. 26 Maximum transient thermal impedance junction to case (for diode)  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_72N60B3(76)06-26-08-C  
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