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IXRH50N120

型号:

IXRH50N120

描述:

IGBT具有反向阻断能力[ IGBT with Reverse Blocking capability ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

50 K

Advanced Technical Information  
VCES = 1000 / 1200 V  
IC25 = 60 A  
VCE(sat) = 2.5 V  
IGBT with Reverse  
Blocking capability  
IXRH 50N120  
IXRH 50N100  
tf  
= 75 ns  
C
TO-247 AD  
G
G
C
E
C (TAB)  
E
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
Features  
IGBT  
IGBT with NPT (non punch through)  
structure  
reverse blocking capability indepen-  
dent from gate voltage  
Symbol  
VCES  
Conditions  
Maximum Ratings  
±
1200  
±
1000  
TVJ = 25°C to 150°C  
IXRH 50N120  
IXRH 50N100  
V
V
- function of series diode monolithically  
integrated  
- no external series diode required  
- soft reverse recovery  
positive temperature coefficient of  
saturation voltage  
- optimum current distribution  
when paralleled  
±
VGES  
20  
V
IC25  
IC90  
TC = 25°C  
TC = 90°C  
60  
40  
A
A
ICM  
VCEK  
VGE = 0/15 V; R = 22 ; TVJ = 125°C  
80  
A
V
RBSOA, ClampGed inductive load; L = 100 µH  
500  
Ptot  
TC = 25°C  
300  
W
Epoxy of TO 247 package meets  
UL 94V-0  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
converters requiring reverse blocking  
capability:  
- current source inverters  
- matrix converters  
- bi-directional switches  
- resonant converters  
- induction heating  
VCE(sat)  
IC = 40 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.5  
3.0  
3.1  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4
8
V
VCE = 0.8 VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
3.0  
- auxiliary switches for soft switching  
in the main current path  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
80  
100  
380  
75  
3.6  
2.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 500 V; IC = 40 A  
VGE = 0/15 V; RG = 22 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 500V; VGE = 15 V; IC = 40 A  
4
150  
nF  
nC  
IRM  
trr  
IF = 40 A; diC/dt = -400 A/µs; TVJ = 125°C  
VCE = -500 V; VGE = 15 V  
58  
840  
A
ns  
RthJC  
0.42 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
IXRH 50N120  
IXRH 50N100  
TO-247 AD Outline  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
Md  
FC  
mounting torque  
mounting force with clip  
0.8 - 1.2  
20...120  
Nm  
N
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
RthCH  
with heatsink compound  
0.25  
6
K/W  
g
Weight  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
© 2000 IXYS All rights reserved  
2 - 2  
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