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IXRH40N120

型号：

IXRH40N120

描述：

IGBT具有反向阻断能力[ IGBT with Reverse Blocking capability ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

115 K

下载PDF手册
IXRH 40N120  
VCES = 1200 V  
IC25 = 55 A  
VCE(sat) = 2.3 V typ.  
IGBT with Reverse  
Blocking capability  
C
E
TO-247 AD  
G
C
E
G
C (TAB)  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
Features  
IGBT  
• IGBT with NPT (non punch through)  
structure  
• reverse blocking capability  
- function of series diode monolithically  
integrated, no external series diode  
required  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
55  
35  
A
A
- soft reverse recovery  
• positive temperature coefficient of  
saturation voltage  
• Epoxy of TO-247 package meets  
UL 94V-0  
ICM  
VCEK  
VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
80  
600  
A
V
Ptot  
TC = 25°C  
300  
W
Applications  
converters requiring reverse blocking  
capability:  
- current source inverters  
- matrix converters  
- bi-directional switches  
- resonant converters  
- induction heating  
- auxiliary switches for soft switching  
in the main current path  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IC = 30 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.8  
2.7  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4
8
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
50 µA  
mA  
3.0  
90  
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
nC  
QGon  
VCE = 120V; VGE = 15 V; IC = 35 A  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
1 - 5  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
IXRH 40N120  
TO-247 AD Outline  
IGBT  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
typ.  
External diode DSEP30-12 - diagram see Fig. 17  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
31 ns  
54 ns  
184 ns  
24 ns  
3.0 mJ  
0.7 mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 35 A  
VGE = 15 V; RG = 15 Ω  
Internal diode - diagram see Fig. 18  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec int  
29.5 ns  
47 ns  
183 ns  
46 ns  
19.2 mJ  
1.0 mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 35 A  
VGE = 15 V; RG = 15 Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
7
mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IRM  
trr  
IF = 35 A; diC/dt = -50 A/µs; TVJ = 125°C  
VCE = -600 V; VGE = 15 V  
28.5  
2.1 µs  
A
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
0.42 K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Component  
Symbol  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Conditions  
Maximum Ratings  
.780 .800  
.177  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Md  
FC  
mounting torque  
mounting force with clip  
0.8 - 1.2  
20...120  
Nm  
N
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
RthCH  
with heatsink compound  
0.25  
6
K/W  
g
Weight  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
2 - 5  
IXRH 40N120  
70  
70  
VGE  
=
VGE = 19 V  
17 V  
15 V  
13 V  
TJ = 25°C  
TJ = 125°C  
19 V  
17 V  
15 V  
13 V  
11 V  
A
A
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
11 V  
9 V  
9 V  
0
2
4
6
V
8
0
2
4
6
8
V
VCE  
VCE  
Fig. 1 Typical output characteristics  
Fig. 2 Typical output characteristics  
5
V
4
90  
VCE = 20 V  
VGE = 15 V  
A
70  
60  
50  
40  
30  
20  
10  
0
IC = 70 A  
IC = 35 A  
3
2
1
0
TJ = 125°C  
IC = 17.5 A  
TJ = 25°C  
TJ = -40°C  
°C  
-50 -25  
0
25 50 75 100 150  
V
5
6
7
8
9
10 11 13  
TVJ  
VGE  
Fig. 3 Typical transfer characteristics  
Fig. 4 Typ. collector emitter saturation  
as a function of case temperature  
15  
mJ  
350  
3
240  
ns  
VCE = 600 V  
VGE 15 V  
tr  
ns  
280  
=
mJ  
12  
9
td(off)  
RG = 15 Ω  
TJ = 125°C  
Eoff  
Eon  
t
t
160  
80  
0
2
1
0
210  
140  
70  
VCE = 600 V  
VGE  
= 15 V  
6
RG = 15 Ω  
TJ = 125°C  
Eon  
Eoff  
3
tf  
td(on)  
0
0
0
10  
20  
30 40  
50  
60 70  
IC  
A
0
10 20 30 40 50 60 70  
IC  
A
Fig. 5 Typ. turn on energy and switching times  
vs. collector current, inductive switching  
with ext. free wheeling diode (Fig. 17)  
Fig. 6 Typ. turn off energy and switching times vs.  
collector current, inductive switching  
with ext. free wheeling diode (Fig. 17)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
3 - 5  
IXRH 40N120  
14  
140  
4
800  
ns  
tr  
VCE = 600 V  
VGE 15 V  
VCE = 600 V  
VGE 15 V  
td(on)  
mJ  
ns  
mJ  
=
=
IC = 35 A  
TJ = 125°C  
IC = 35 A  
TJ = 125°C  
3
2
1
0
600  
Eoff  
Eon  
10  
8
100  
80  
60  
40  
20  
0
t
t
td(off)  
400  
6
Eoff  
4
200  
Eon  
2
tf  
0
0
100  
Ω
Ω
0
20  
40  
60  
80  
100  
0
20  
40  
60  
RG  
80  
RG  
Fig. 7 Typ. turn on energy and switching times  
vs. gate resistor, inductive switching  
Fig. 8 Typ. turn off energy and switching times  
vs. gate resistor, inductive switching  
with ext. free wheeling diode (Fig. 17)  
with ext. free wheeling diode (Fig. 17)  
150  
6
240  
50  
mJ  
40  
VCE = 600 V  
VGE 15 V  
ns  
td(off)  
=
ns  
mJ  
120  
90  
60  
30  
0
Eon  
Erecint  
RG = 15 Ω  
TJ = 125°C  
tr  
Eoff  
tf  
t
t
4
2
0
160  
VCE = 600 V  
30  
20  
10  
0
VGE  
= 15 V  
td(on)  
RG = 15 Ω  
TJ = 125°C  
Eon  
80  
0
Erec  
20  
int  
Eoff  
A
0
20  
40  
60  
80  
100  
0
40  
60  
80  
A
IC  
IC  
Fig. 9 Typ. turn on energy and switching times  
vs. collector current, inductive switching  
with internal diode (Fig. 18)  
Fig. 10 Typ. turn off energy and switching times  
vs. collector current, inductive switching  
with internal diode (Fig. 18)  
30  
150  
3
900  
tr  
td(on)  
VCE = 600 V  
mJ  
VGE  
= 15 V  
ns  
ns  
mJ  
IC = 35 A  
TJ = 125°C  
td(off)  
Eon  
t
t
20  
15  
10  
5
100  
2
1
0
600  
Eoff  
Eon  
VCE = 600 V  
VGE 15 V  
=
75  
50  
25  
0
IC = 35 A  
TJ = 125°C  
Eoff  
300  
0
Erecint  
tf  
0
0
20  
40  
60  
80  
Ω
100  
0
20  
40  
60  
RG  
80  
Ω
RG  
Fig. 11 Typ. turn on energy and switching times  
vs. gate resistor, inductive switching  
with internal diode (Fig. 18)  
Fig. 12 Typ. turn off energy and switching times  
vs. gate resistor, inductive switching  
with internal diode (Fig. 18)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
4 - 5  
IXRH 40N120  
36  
C
35  
60  
A
2400  
VCE = -600 V  
VGE 15 V  
VCE = -600 V  
trr  
ns  
=
VGE  
= 15 V  
2100  
IC = 35 A  
TJ = 125°C  
50  
TJ = 125°C  
Qrr  
t
34  
33  
32  
31  
30  
IRM  
1800  
1500  
1200  
900  
40  
30  
20  
IRM  
A/µs  
A/µs  
500  
0
100  
200  
300  
400  
500  
diF/dt  
0
100  
200  
300  
400  
diF/dt  
Fig. 13 Typ. turn off characteristics  
of the internal diode  
Fig. 14 Typ. turn off characteristics  
of the internal diode  
0.45  
20  
V
0.4  
16  
K/W  
0.3  
12  
8
ZthJC  
0.2  
VCE = 120 V  
IC = 35 A  
0.1  
4
IXRH40N120  
0
0.00  
0.0  
0.001  
0.01  
0.1  
1
s
10  
0.04  
0.08  
0.12  
QG  
0.16  
C
t
Fig. 16 Typ. transient thermal impedance  
Fig. 15 Typical gate charge  
Ri 0.034  
τ 0.0001 0.0035  
0.048  
0.092 0.174 0.075  
0.02 0.142 0.18  
current  
sensing  
+15 V  
IGBT  
ison  
Voltage  
source  
Free  
wheeling  
diode  
DUT  
DUT  
Voltage  
source  
Gate  
Resistor  
Gate  
Resistor  
Device  
under  
test  
Driver  
Driver  
current  
sensing  
current  
sensing  
Fig. 17 turn-on/turn-off with  
Fig. 18 turn-on/turn-off with internal diode  
externaldiode(DSEP30-12)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
5 - 5  
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