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IXGT24N60CD1

型号：

IXGT24N60CD1

描述：

HiPerFAST IGBT与二极管光速系列[ HiPerFAST IGBT with Diode Lightspeed Series ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

105 K

下载PDF手册
HiPerFASTTM IGBT  
with Diode  
LightspeedSeries  
IXGH 24N60CD1 VCES  
IXGT 24N60CD1 IC25  
= 600 V  
= 48 A  
VCE(sat) = 2.5 V  
Preliminary data  
TO-268  
(IXGT)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGE = 1 MW  
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
48  
24  
80  
A
A
A
TO-247 AD  
(IXGH)  
TC = 110°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 100 mH  
ICM = 48  
@ 0.8 VCES  
A
G
C
E
PC  
TC = 25°C  
150  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Internationalstandardpackages  
JEDEC TO-247 and surface  
mountableTO-268  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
• High frequency IGBT  
Weight  
TO-247  
TO-268  
6
4
g
g
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
- drive simplicity  
• Fast recovery expitaxial Diode (FRED)  
- soft recovery with low IRM  
Symbol  
BVCES  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• PFC circuits  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
IC = 750 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
VGE(th)  
ICES  
5.5  
V
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200  
3
mA  
mA  
Advantages  
• High power density  
• Very fast switching speeds for high  
frequencyapplications  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC110, VGE = 15 V  
2.1  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98603A(4/99)  
1 - 5  
IXGH 24N60CD1  
IXGT 24N60CD1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXGH) Outline  
IC = IC110; VCE = 10 V,  
9
17  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
1500  
170  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
55  
13  
17  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
Dim. Millimeter  
Inches  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
15  
25  
ns  
ns  
Min. Max. Min. Max.  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
IC = IC110, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 10 W  
75  
140 ns  
110 ns  
0.36 mJ  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
60  
,
,
E
F
4.32 5.49 0.170 0.216  
Eoff  
0.24  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
td(on)  
tri  
15  
25  
ns  
ns  
Inductive load, TJ = 125°C  
-
4.5  
-
0.177  
J
1.0  
1.4 0.040 0.055  
IC = IC110, VGE = 15 V, L = 100 mH  
K
10.8 11.0 0.426 0.433  
Eon  
td(off)  
tfi  
1
mJ  
ns  
VCE = 0.8 VCES, RG = Roff = 10 W  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
130  
110  
0.6  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
N
1.5 2.49 0.087 0.102  
Eoff  
mJ  
TO-268AA (D3 PAK)  
RthJC  
RthCK  
0.83 K/W  
K/W  
(TO-247)  
0.25  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
IF = IC110, VGE = 0 V,  
min. typ. max.  
TJ = 150°C  
1.6  
2.5  
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C  
IRM  
trr  
IF = IC110, VGE = 0 V, -diF/dt = 100 A/ms  
VR = 100 V  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V  
6
A
ns  
ns  
TJ = 100°C 100  
TJ = 25°C 25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
RthJC  
0.9 K/W  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
Min. Recommended Footprint  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGH 24N60CD1  
IXGT 24N60CD1  
200  
160  
120  
80  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
TJ = 25°C  
VGE = 15V  
13V  
9V  
TJ = 25°C  
11V  
9V  
7V  
40  
7V  
0
0
4
8
12  
16  
20  
0
1
2
3
4
5
VCE - Volts  
VCE - Volts  
Fig. 1 SaturationVoltageCharacteristics  
Fig. 2 Extended Output Characteristics  
1.4  
1.2  
1.0  
0.8  
0.6  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
TJ = 125°C  
9V  
IC = 48A  
VGE = 15V  
IC = 24A  
IC = 12A  
7V  
5V  
25  
50  
75  
TJ - Degrees C  
Fig.4 Temperature Dependence of VCE(sat)  
100  
125  
150  
0
1
2
3
4
5
VCE - Volts  
Fig. 3 SaturationVoltageCharacteristics  
50  
40  
30  
20  
10  
0
f = 1Mhz  
VCE = 10V  
1000  
100  
10  
C
iss  
TJ =125°C  
C
oss  
TJ = 25°C  
C
rss  
0
5
10 15 20 25 30 35 40  
2
3
4
5
6
7
8
9
10  
VCE-Volts  
VGE - Volts  
Fig. 5 Admittance Curves  
Fig. 6 Temperature Dependence of VF & VF  
© 2000 IXYS All rights reserved  
3 - 5  
IXGH 24N60CD1  
IXGT 24N60CD1  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
2.0  
1.5  
1.0  
0.5  
0.0  
1.00  
0.75  
0.50  
0.25  
0.00  
TJ = 125°C  
TJ = 125°C  
RG = 10  
E(OFF)  
1.5  
E(ON)  
IC =48A  
IC = 24A  
E(ON)  
1.0  
E(OFF)  
E(ON)  
0.5  
E(OFF)  
E(ON)  
IC = 12A  
E(OFF)  
0.0  
60  
0
10  
20  
IC - Amperes  
Fig.7. Dependence of EOFF and EOFF on IC  
30  
40  
50  
0
10  
20  
30  
40  
50  
RG - Ohms  
Fig.8. Dependence of EOFF on RG  
16  
12  
8
100  
40  
V
CE = 300V  
IC = 24A  
10  
TJ = -55 to +125°C  
RG = 4.7  
dV/dt < 5V/ns  
1
4
0
0.1  
0
20  
40  
60  
80  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
VCE - Volts  
Fig.9. GateCharge  
Fig.10. Turn-offSafeOperatingArea  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
0.01  
Single pulse  
0.0001  
D = Duty Cycle  
0.001  
0.00001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11 IGBT Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 5  
IXGH 24N60CD1  
IXGT 24N60CD1  
60  
A
1000  
nC  
30  
A
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/ s  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ=100°C  
TVJ=100°C  
IF = 30A  
VR = 300V  
V
µs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 17 Peak forward voltage VFR and tfr  
versus diF/dt  
Fig. 15 Dynamic parameters Qr, and  
IRM versus TVJ temperature  
Fig. 16 Recovery time trr versus -diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
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