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IXGA42N30C3

型号：

IXGA42N30C3

描述：

GenX3 300V IGBT[ GenX3 300V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

174 K

下载PDF手册
GenX3TM 300V IGBT  
VCES = 300V  
IC110 = 42A  
VCE(sat) ≤ 1.85V  
tfi typ = 65ns  
IXGA42N30C3  
IXGH42N30C3  
IXGP42N30C3  
High Speed PT IGBTs for  
50-150kHz switching  
TO-263 (IXGA)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
300  
300  
±20  
±30  
V
V
V
V
G
E
VCGR  
C (TAB)  
VGES  
TO-247 (IXGH)  
VGEM  
Transient  
IC110  
ICM  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
42  
A
A
250  
G
IA  
TC = 25°C  
TC = 25°C  
42  
250  
A
mJ  
A
C (TAB)  
C
E
EAS  
TO-220 (IXGP)  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 10Ω  
Clamped inductive load @ ≤ 300V  
ICM = 84  
(RBSOA)  
PC  
TC = 25°C  
223  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G
C
E
TJM  
Tstg  
-55 ... +150  
G = Gate  
E = Emitter  
C
= Collector  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
TAB = Collector  
TSOLD  
Md  
Mounting torque (TO-247)(TO-220)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-263  
TO-247  
TO-220  
2.5  
6.0  
3.0  
g
g
g
z Optimized for low switching losses  
z Square RBSOA  
z High current handling capability  
z International standard packages  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
300  
2.5  
Typ.  
Max.  
z High power density  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES  
V
V
z Low gate drive requirement  
5.0  
Applications  
25 μA  
500 μA  
±100 nA  
z High Frequency Power Inverters  
z UPS  
VGE = 0V  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
z Motor Drives  
VCE(sat)  
IC = 42A, VGE = 15V, Note1  
TJ = 125°C  
1.54  
1.54  
1.85  
V
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
© 2008 IXYS CORPORATION, All rights reserved  
DS99885B(07/08)  
IXGA42N30C3 IXGH42N30C3  
IXGP42N30C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
20  
Typ.  
Max.  
gfs  
IC = 0.5 • IC110, VCE = 10V, Note 1  
33  
S
Cies  
Coes  
Cres  
Qg  
2140  
218  
60  
pF  
pF  
pF  
nC  
nC  
nC  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
76  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
15  
26  
e
td(on)  
tri  
21  
23  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 0.5 • IC110, VGE = 15V  
VCE = 200V, RG = 10Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
0.12  
113  
65  
mJ  
170 ns  
120 ns  
0.28 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
0.15  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
21  
22  
ns  
ns  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
Inductive Load, TJ = 125°C  
IC = 0.5 • IC110, VGE = 15V  
VCE = 200V, RG = 10Ω  
Eon  
td(off)  
tfi  
0.21  
127  
102  
0.20  
mJ  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
ns  
6.15 BSC  
Eoff  
mJ  
RthJC  
RthCK  
0.56 °C/W  
TO-220  
TO-247  
0.50  
0.25  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
2 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA42N30C3 IXGH42N30C3  
IXGP42N30C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
50  
5V  
25  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
15  
0
2
4
6
8
10  
12  
14  
16  
150  
9.0  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
80  
70  
60  
50  
40  
30  
20  
10  
0
I C = 84A  
9V  
7V  
I C = 42A  
I C = 21A  
5V  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
TJ = 25ºC  
I C = 84A  
42A  
21A  
TJ = 125ºC  
25ºC  
- 40ºC  
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA42N30C3 IXGH42N30C3  
IXGP42N30C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VCE = 150V  
TJ = - 40ºC  
I C = 42A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
0
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
TJ = 125ºC  
RG = 10  
Ω
dV / dt < 10V / ns  
C
res  
10  
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGA42N30C3 IXGH42N30C3  
IXGP42N30C3  
Fig. 13. Inductive Swiching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
CE = 200V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
off  
E
E
on - - - -  
VGE = 15V  
off  
RG = 10  
Ω ,  
VCE = 200V  
V
I C = 84A  
TJ = 125ºC  
TJ = 25ºC  
I C = 42A  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
10 15 20 25 30 35 40 45 50 55 60 65 70 75  
RG - Ohms  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
t f  
td(off) - - - -  
V
I C = 84A  
TJ = 125ºC, GE = 15V  
CE = 200V  
V
E
E
on - - - -  
VGE = 15V  
,
off  
RG = 10  
Ω
I C = 42A  
VCE = 200V  
I C = 84A  
I C = 42A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
10 15 20 25 30 35 40 45 50 55 60 65 70 75  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
170  
160  
150  
140  
130  
120  
110  
100  
90  
140  
135  
130  
125  
120  
115  
110  
170  
160  
150  
140  
130  
120  
110  
100  
90  
135  
130  
125  
120  
115  
110  
tf  
td(off) - - - -  
RG = 10 , VGE = 15V  
t f  
td(off) - - - -  
Ω
RG = 10 , V = 15V  
Ω GE  
VCE = 200V  
VCE = 200V  
TJ = 125ºC  
I
= 84A  
C
80  
70  
TJ = 25ºC  
I C = 42A  
80  
60  
50  
70  
20  
30  
40  
50  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA42N30C3 IXGH42N30C3  
IXGP42N30C3  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Collector Current  
140  
120  
100  
80  
32  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
tr  
td(on) - - - -  
tr  
td(on) - - - -  
30  
28  
26  
24  
22  
20  
18  
RG = 10 , VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 200V  
25ºC < T < 125ºC  
J
VCE = 200V  
I C = 84A  
60  
I C = 42A  
40  
60  
20  
40  
20  
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75  
RG - Ohms  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
32  
30  
28  
26  
24  
22  
20  
18  
I C = 84A  
tr  
td(on)  
- - - -  
RG = 10 , VGE = 15V  
Ω
VCE = 200V  
I C = 42A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_42N30C3(55)8-05-08-A  
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